Ohmic contact to lightly doped islands from a conductive rapid diffusion buried layer

Claim 2

A semiconductor device having an ohmic contact to a buried layer comprising: a device wafer: a first layer of diffusing material on one surface of the device wafer, said first layer including a first dopant and having a rate of diffusion for said first dopant that is substantially greater than the rate of diffusion in the device wafer for said first dopant; a first heavily doped layer in said device wafer adjacent the first layer, containing dopant diffused from said first layer and providing ohmic contact between the first layer and the heavily doped layer; a handle wafer connected to the first layer; and a second heavily doped layer in said handle wafer containing dopant diffused from said first layer and providing ohmic contact between the first layer and the second heavily doped layer.

Claim 3

The semiconductor device of claim 1 wherein the device wafer is silicon and the first layer is a silicide.

Claim 4

The semiconductor device of claim 2 wherein the silicide is selected from the group consisting of tungsten silicide and titanimum silicide.

Claim 5

The semiconductor device of claim 1 wherein the first dopant is one selected from the group consisting of P, As, B, and Sb.

Claim 6

The semiconductor device of claim 1 further comprising: a plurality of isolation trenches, each trench having spaced apart walls and a bottom and extending from the other surface of the device wafer through the first layer to define a plurality of device-islands; and dielectric material on the trench walls adjacent the device wafer.

Claim 7

The semiconductor device of claim 5 wherein the walls of the trenches are heavily doped with the first dopant.

Claim 8

The semiconductor device of claim 5 wherein a portion of one of the islands at a location adjacent to one of the trenches is heavily doped with said first dopant.

Claim 9

The semiconductor device of claim 5 wherein a second device island is heavily doped with a second dopant; and the second dopant from said device island is diffused to the first layer and through the first layer to form a heavily doped layer beneath the second device island in ohmic contact with the first layer.

Claim 10

The semiconductor device of claim 5 further comprising channel stops beneath the trenches.

Claim 11

The semiconductor device of claim 5 wherein the trenches are coated with a dielectric layer and filled with a semiconductor material.

Claim 12

The semiconductor device of claim 10 wherein the dielectric material is silicon dioxide and the semiconductor material is polysilicon.

Claim 13

The semiconductor device of claim 5 further comprising a handle wafer oxide bonded to the device wafer wherein the trenches from the other surface of the device wafer extend to the bond oxide.

Claim 14

The semiconductor device of claim 1 wherein a portion of the other surface of the device wafer is doped with a second dopant of a polarity different from the polarity of the first dopant.

Claim 15

The semiconductor device of claim 13 wherein the second dopant forms a collector.

Claim 16

The semiconductor device of claim 1 further comprising: a surface contact trench extending from the other surface of the device wafer to the first layer; a coating on the trench of diffusing material of said first layer.

Claim 17

A semiconductor device having an ohmic contact to a buried layer comprising: a silicon device wafer doped with a first dopant of a first polarity; a handle wafer having a second dopant of a second polarity; a conductive rapid diffusion layer between the device wafer and the handle wafer; a first region on the device wafer providing a first isolation diffusion of a dopant of the first polarity; in said first region a collector diffusion of a dopant of the second polarity; an epitaxial layer on the device wafer over the isolation diffusion; means including dielectric isolation trenches and channel stops beneath said trenches for electrically isolating the first region and forming adjoining islands of the device wafer, said adjoining islands being electrically isolated from each other; a heavily doped region of a first dopant in one of the islands with a first dopant with said first dopant diffused from said heavily doped region to the rapid diffusion layer to form an ohmic contact between the rapid diffusion layer and the island; wherein said first dopant diffuses into said handle wafer.

Claim 18

A semiconductor device having an ohmic contact to a buried layer comprising: a silicon device wafer doped with a first dopant of a first polarity; a handle wafer having a second dopant of a second polarity; a conductive rapid diffusion layer between the device wafer and the handle wafer; a first region on the device wafer providing a first isolation diffusion of a dopant of the first polarity; in said first region a collector diffusion of a dopant of the second polarity; an epitaxial layer on the device wafer over the isolation diffusion; means including dielectric isolation trenches and channel stops beneath said trenches for electrically isolating the first region and forming adjoining islands of the device wafer, said adjoining islands being electrically isolated from each other; a heavily doped region of a first dopant in one of the islands with a first dopant with said first dopant diffused from said heavily doped region to the rapid diffusion layer to form an ohmic contact between the rapid diffusion layer and the island; wherein said first dopant diffuses into said handle wafer.

Claim 19

The semiconductor device of claim 16 wherein the dopant from the first region is diffused to and through the rapid diffusion layer to form an ohmic contact between the rapid diffusion layer and the first island and to form a junction between the handle wafer and the diffused region.

Claim 20

A semiconductor device for making an ohmic contact to a buried layer comprising: a silicon device wafer having an epitaxial layer lightly doped with a first dopant of a first dopant of a first polarity; a conductive rapid diffusion layer over the epitaxial layer; a handle wafer lightly doped with a second dopant, and containing said first dopant diffused from said epitaxial layer, said handle wafer being bonded to the rapid diffusion layer; a plurality of trenches in the epitaxial layer, said trenches extending to the handle wafer and including dielectric material for isolating the trenches from said handle wafer and channel stops in the bottom of the trenches said trenches forming a plurality of epitaxial islands, each island in contact with the rapid diffusion layer; and a heavily doped layer in the islands, beneath the surface of said islands and in ohmic contact with the rapid diffusion layer.

Claim 21

A semiconductor device for making an ohmic contact to a buried layer comprising: a silicon device wafer having an epitaxial layer lightly doped with a first dopant of a first dopant of a first polarity; a conductive rapid diffusion layer over the epitaxial layer; a handle wafer lightly doped with a second dopant, and containing said first dopant diffused from said epitaxial layer, said handle wafer being bonded to the rapid diffusion layer; a plurality of trenches in the epitaxial layer, said trenches extending to the handle wafer and including dielectric material for isolating the trenches from said handle wafer and channel stops in the bottom of the trenches said trenches forming a plurality of epitaxial islands, each island in contact with the rapid diffusion layer; and a heavily doped layer in the islands, beneath the surface of said islands and in ohmic contact with the rapid diffusion layer.

Claim 22

The semiconductor for claim 18 further comprising: an oxide layer on the rapid diffusion layer for oxide bonding the handle wafer to the device wafer.

Claim 23

A semiconductor device comprising: a semiconductor substrate comprised of a device wafer and a handle substrate, the handle substrate having a doping of a one polarity; a conductive rapid diffusion layer between the device wafer and the handle substrate; an epitaxial layer having a doping of a polarity opposite the polarity of the substrate and disposed on the conductive rapid diffusion layer and having one or more electronic devices formed in said epitaxial layer; first and second buried heavily doped layers of a first dopant in ohmic contact with said rapid diffusion layer and each on an opposite surface of said conductive rapid diffusion layer; a first surface contact; a deep heavily doped region comprising said first dopant and extending from the first surface contact to one of said buried doped layers; a gate electrode disposed over the epitaxial layer and electrically isolated therefrom by a gate insulating layer on said epitaxial surface; wherein said first dopant diffuses into said handle wafer.

Claim 24

A semiconductor device comprising: a semiconductor substrate comprised of a device wafer and a handle substrate, the handle substrate having a doping of a one polarity; a conductive rapid diffusion layer between the device wafer and the handle substrate; an epitaxial layer having a doping of a polarity opposite the polarity of the substrate and disposed on the conductive rapid diffusion layer and having one or more electronic devices formed in said epitaxial layer; first and second buried heavily doped layers of a first dopant in ohmic contact with said rapid diffusion layer and each on an opposite surface of said conductive rapid diffusion layer; a first surface contact; a deep heavily doped region comprising said first dopant and extending from the first surface contact to one of said buried doped layers; a gate electrode disposed over the epitaxial layer and electrically isolated therefrom by a gate insulating layer on said epitaxial surface; wherein said first dopant diffuses into said handle wafer.

Claim 25

The semiconductor device of claim 20 wherein the deep heavily doped region comprises a dopant of the same polarity as the epitaxial layer.

Claim 26

The semiconductor device of claim 20 wherein the deep heavily doped region comprises a dopant of a polarity opposite the polarity of the doping of the epitaxial layer.

Claim 27

The semiconductor device of claim 22 wherein the handle wafer further comprises a layer of a dopant of a second polarity opposite to the polarity of the first dopant and adjacent the second buried layer to form an isolation junction.

Claim 28

A semiconductor device comprising: a semiconductor substrate comprised of a device wafer and a handle substrate, the handle substrate having a doping of a first polarity, the device water having a doping of a second polarity opposite to the doping of the first polarity; a conductive rapid diffusion layer between the device wafer and the handle substrate; an isolation trench surrounding an island of the device wafer, said trench filled with material including a dielectric material; a buried layer contact trench extending from the surface of the island to the conductive rapid diffusion layer and comprising conductive rapid diffusion material on the wall of said surface contact trench; and first and second heavily doped buried layers comprising dopants of a second polarity, said first and second heavily doped buried layers disposed in ohmic contact with the conductive rapid diffusion layer.

Claim 29

A semiconductor device comprising: a semiconductor substrate comprised of a device wafer and a handle substrate, the handle substrate having a doping of a first polarity, the device water having a doping of a second polarity opposite to the doping of the first polarity; a conductive rapid diffusion layer between the device wafer and the handle substrate; an isolation trench surrounding an island of the device wafer, said trench filled with material including a dielectric material; a buried layer contact trench extending from the surface of the island to the conductive rapid diffusion layer and comprising conductive rapid diffusion material on the wall of said surface contact trench; and first and second heavily doped buried layers comprising dopants of a second polarity, said first and second heavily doped buried layers disposed in ohmic contact with the conductive rapid diffusion layer.

Claim 30

The semiconductor device of claim 24 wherein further comprising a heavily doped region comprising dopants of a second polarity in the surface of the island adjacent the buried layer contact trench.

Claim 31

The semiconductor device of claim 16 further comprising a doped semiconductor layer having ohmic contact to said rapid diffusion layer.

Claim 32

The semiconductor device of claim 16 wherein the conductive rapid diffusion layer is a silicide layer.

Claim 33

The semiconductor device of claim 18 wherein the conductive rapid diffusion layer is a silicide layer.

Claim 34

The semiconductor device of claim 24 wherein said second dopant diffuses into said handle substrate.

Claim 35

A semiconductor device comprising: a semiconductor substrate comprised of a device wafer and a handle substrate, the handle substrate having a doping of a first polarity, the device wafer having a doping of a second polarity opposite to the doping of the first polarity; a conductive rapid diffusion layer between the device wafer and the handle substrate; a first diffused layer having a doping of the first polarity, between the rapid diffusion layer and handle substrate, and making ohmic contact with the rapid diffusion layer; a second diffused layer between the first diffused layer and the handle substrate, having a doping of the second polarity to form PN junctions with the first diffused layer and the handle substrate to provide isolation between the first diffused layer and the handle substrate; and an isolation trench surrounding an island of the device layer and the conductive rapid diffusion layer, said trench filled with material including a dielectric material; wherein said second polarity dopant diffuses into said handle substrate.

Claim 36

A semiconductor device comprising: a semiconductor substrate comprised of a device wafer and a handle substrate, the handle substrate having a doping of a first polarity, the device wafer having a doping of a second polarity opposite to the doping of the first polarity; a conductive rapid diffusion layer between the device wafer and the handle substrate; a first diffused layer having a doping of the first polarity, between the rapid diffusion layer and handle substrate, and making ohmic contact with the rapid diffusion layer; a second diffused layer between the first diffused layer and the handle substrate, having a doping of the second polarity to form PN junctions with the first diffused layer and the handle substrate to provide isolation between the first diffused layer and the handle substrate; and an isolation trench surrounding an island of the device layer and the conductive rapid diffusion layer, said trench filled with material including a dielectric material; wherein said second polarity dopant diffuses into said handle substrate.

Claim 37

The semiconductor device of claim 30 wherein the trench provide lateral isolation.

Claim 38

The semiconductor device of claim 30 wherein the island further comprises the diffusion layer.

Claim 39

The semiconductor material of claim 30 wherein the conductive rapid diffusion layer is silicide.

Claim 40

The semiconductor device of claim 18 further comprising a doped semiconductor layer having ohmic contact to said rapid diffusion layer.