US5369304A
Expired / Lapsed
US
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Conductive diffusion barrier of titanium nitride in ohmic contact with a plurality of doped layers therefor
Assignee: Motorola Solutions Inc
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Filing: 1992-08-14
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Granted: 1994-11-29
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Expires: 2012-08-14
Abstract
Abstract A plurality of doped areas (12, 13, 14) are formed on a surface of a semiconductor wafer. A titanium nitride layer (17) is used for covering the plurality of doped areas (12, 13, 14) and for providing electrical connection between the doped areas (12, 13, 14). The titanium nitride layer (17) substantially prevents dopants from diffusing into the titanium nitride ( 17 ) and subsequently counterdoping the doped areas (12, 13, 14) during subsequent high temperature processing operations.
Inventors
- 👤 Israel A. Lesk
- 👤 Francine Y. Robb
- 👤 Lewis E. Terry
- 👤 Frank S. d'Aragona
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 17:49
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D64/62; H10D62/00; H10D62/80; H10D62/85; Y; Y10; Y10S; Y10S148/00; Y10S148/012; Y10S257/00; Y10S257/915
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
119 words
A semiconductor wafer having a conductive diffusion barrier comprising: a semiconductor wafer having a plurality of doped areas in a surface of the wafer; a layer of titanium nitride covering the plurality of doped areas and in ohmic contact with the plurality of doped areas wherein the titanium nitride forms a diffusion barrier that prevents dopants within a first doped area of the plurality of doped areas from diffusing laterally through the titanium nitride and into a second doped area of the plurality of doped areas; a protective layer covering the titanium nitride wherein the protective layer includes a layer of polysilicon, silicon dioxide or silicon nitride; and a handle wafer bonded to the protective layer by wafer bonding.
Claim 2
Dependent Claim
119 words
A semiconductor wafer having a conductive diffusion barrier comprising: a semiconductor wafer having a plurality of doped areas in a surface of the wafer; a layer of titanium nitride covering the plurality of doped areas and in ohmic contact with the plurality of doped areas wherein the titanium nitride forms a diffusion barrier that prevents dopants within a first doped area of the plurality of doped areas from diffusing laterally through the titanium nitride and into a second doped area of the plurality of doped areas; a protective layer covering the titanium nitride wherein the protective layer includes a layer of polysilicon, silicon dioxide or silicon nitride; and a handle wafer bonded to the protective layer by wafer bonding.
Claim 3
Dependent Claim
32 words
The semiconductor wafer of claim 1 wherein the plurality of doped areas includes a P-type area adjacent to an N-type area, and a heavily doped area adjacent to a lightly doped area.
Claim 4
Dependent Claim
26 words
The semiconductor wafer of claim 1 wherein the layer of titanium nitride has a resistivity of less than 50 micro ohm-centimeter subsequent to the wafer bonding.
Claim 5
Dependent Claim
114 words
A semiconductor wafer having a conductive diffusion barrier comprising: a semiconductor wafer having a plurality of doped areas in a surface of the wafer; a layer of titanium nitride covering the plurality of doped areas and in ohmic contact with the plurality of doped areas wherein the titanium nitride forms a diffusion barrier that prevents dopants within a first doped area of the plurality of doped areas from diffusing laterally through the titanium nitride and into a second doped area of the plurality of doped areas; a protective layer covering the titanium nitride wherein the protective layer includes a layer of polysilicon; and a handle wafer bonded to the protective layer by wafer bonding.
Claim 6
Dependent Claim
114 words
A semiconductor wafer having a conductive diffusion barrier comprising: a semiconductor wafer having a plurality of doped areas in a surface of the wafer; a layer of titanium nitride covering the plurality of doped areas and in ohmic contact with the plurality of doped areas wherein the titanium nitride forms a diffusion barrier that prevents dopants within a first doped area of the plurality of doped areas from diffusing laterally through the titanium nitride and into a second doped area of the plurality of doped areas; a protective layer covering the titanium nitride wherein the protective layer includes a layer of polysilicon; and a handle wafer bonded to the protective layer by wafer bonding.
Claim 7
Dependent Claim
120 words
A semiconductor wafer having a conductive diffusion barrier comprising: a semiconductor wafer having a plurality of doped areas in a surface of the wafer; a layer of titanium nitride covering the plurality of doped areas and in ohmic contact with the plurality of doped areas wherein the titanium nitride forms a diffusion barrier that prevents dopants within a first doped area of the plurality of doped areas from diffusing laterally through the titanium nitride and into a second doped area of the plurality of doped areas; a protective layer covering the titanium nitride; and a handle wafer bonded to the protective layer by wafer bonding a refractory metal silicide on a surface of the handle wafer to the protective layer.
Claim 8
Dependent Claim
120 words
A semiconductor wafer having a conductive diffusion barrier comprising: a semiconductor wafer having a plurality of doped areas in a surface of the wafer; a layer of titanium nitride covering the plurality of doped areas and in ohmic contact with the plurality of doped areas wherein the titanium nitride forms a diffusion barrier that prevents dopants within a first doped area of the plurality of doped areas from diffusing laterally through the titanium nitride and into a second doped area of the plurality of doped areas; a protective layer covering the titanium nitride; and a handle wafer bonded to the protective layer by wafer bonding a refractory metal silicide on a surface of the handle wafer to the protective layer.
Claim 9
Dependent Claim
14 words
The semiconductor wafer of claim 5 wherein the refractory metal silicide includes tungsten silicide.
References Cited (Backward Citations)
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| 3.5 Years (Year 4) | 1997-11-28 | 1998-05-30 | 1998-11-29 | $2000.00 | Window Closed / Lapsed |
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