US5885902A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Integrated arc and polysilicon etching process
Assignee: Advanced Micro Devices Inc
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Filing: 1997-11-05
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Granted: 1999-03-23
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Expires: 2017-11-05
Abstract
Abstract A composite of an anti-reflective coating on polysilicon is accurately etched to form a polysilicon pattern by initially etching the ARC with gaseous plasma containing helium and/or nitrogen which is substantially inert with respect to polysilicon.
Inventors
- 👤 Tom Blasingame
- 👤 Subash Gupta
- 👤 Scott A. Bell
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 20:39
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/71; H10P50/20; H10P50/26; H10P50/264; H10P50/266; H10P50/267; H10P50/268; H10P50/28; H10P50/286; H10P50/287; H10P76/00; H10P76/20; H10P76/204; H10P76/2041; H10P76/2043; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/948; Y10S438/95; Y10S438/952
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
71 words
A method of manufacturing a semiconductor device, which method comprises: depositing a layer of polysilicon on a dielectric layer; depositing a dielectric anti-reflective coating on the polysilicon layer; etching the dielectric anti-reflective coating with a first etchant comprising an inert gaseous plasma containing either helium, nitrogen, or a mixture thereof, which does not substantially etch the polysilicon layer; and etching the polysilicon layer with a second etchant to form a pattern.
Claim 2
Independent Claim
71 words
A method of manufacturing a semiconductor device, which method comprises: depositing a layer of polysilicon on a dielectric layer; depositing a dielectric anti-reflective coating on the polysilicon layer; etching the dielectric anti-reflective coating with a first etchant comprising an inert gaseous plasma containing either helium, nitrogen, or a mixture thereof, which does not substantially etch the polysilicon layer; and etching the polysilicon layer with a second etchant to form a pattern.
Claim 3
Dependent Claim
35 words
The method according to claim 1, wherein the polysilicon layer has a non-planar surface topography and the dielectric anti-reflective coating has a resulting non-uniform thickness due to the non-planar surface topography of the polysilicon layer.
Claim 4
Dependent Claim
31 words
The method according to claim 2, comprising etching the polysilicon layer with a second etchant to form a conductive pattern comprising a plurality of gate electrodes having substantially similar etch profiles.
Claim 5
Dependent Claim
21 words
The method according to claim 1, wherein the dielectric anti-reflective coating and the polysilicon layer are etched in the same chamber.
Claim 6
Dependent Claim
33 words
The method according to claim 4, wherein the dielectric anti-reflective coating and polysilicon layers are sequentially etched without conducting an intervening step to remove polymeric material from the polysilicon layer and/or the chamber.
Claim 7
Dependent Claim
22 words
The method according to claim 1, wherein the first etchant comprises a gaseous plasma containing nitrogen with or without an inert gas.
Claim 8
Dependent Claim
17 words
The method according to claim 1, wherein the dielectric anti-reflective coating comprises an organic or organometallic material.
Claim 9
Dependent Claim
23 words
The method according to claim 1, comprising etching the polysilicon layer with a second etchant to form a pattern comprising a gate electrode.
Claim 10
Dependent Claim
16 words
The method according to claim 8, wherein the gate electrode has a substantially uniform etch profile.
Claim 11
Dependent Claim
31 words
The method according to claim 1, comprising etching the polysilicon layer with a second etchant to form a conductive pattern comprising a plurality of gate electrodes having substantially similar etch profiles.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-03-22 | 2002-09-21 | 2003-03-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-03-22 | 2006-09-21 | 2007-03-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-03-22 | 2010-09-21 | 2011-03-23 | $7700.00 | Window Closed / Lapsed |