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US5635335A Expired / Lapsed US ⏱️ 0.0 years remaining

Method for fabricating semiconductor device utilizing dual photoresist films imaged with same exposure mask

Assignee: SK Hynix Inc
•
Filing: 1994-12-12
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Granted: 1997-06-03
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Expires: 2014-12-12
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Abstract

Abstract A method for fabricating a semiconductor device, including the steps of: coating an anti-reflective film over a lower layer to be patterned; coating a first photoresist film over the anti-reflective film and subjecting the first photoresist film to a light exposure process using a mask and a development process, thereby forming a first photoresist film pattern having a dimension slightly larger than a desired pattern dimension; etching an exposed portion of the anti-reflective film, thereby forming an anti-reflective film pattern; removing the first photoresist film pattern and coating a second photoresist film over the entire exposed surface of the resulting structure obtained after the removal of the first photoresist film pattern; subjecting the second photoresist film to a light exposure process using the mask and a development, thereby forming a second photoresist film pattern having the desired pattern dimension; and etching an exposed portion of the anti-reflective film pattern and then etching the lower layer, thereby forming a lower layer pattern.

Inventors

  • 👤 Sang M. Bae
  • 👤 Seung C. Moon

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-31 13:48
CPC Classifications
H; H10; H10P; H10P76/00; H10P76/40; H10P76/405; G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/091; H10P76/20; H10P76/204; H10P76/2041; H10P76/2043

Claims Analysis

Total Claims: 7
Claim 1
Independent Claim 178 words
A method for fabricating a semiconductor device, comprising the steps of: coating an anti-reflective film over a lower layer to be patterned; coating a first photoresist film over said anti-reflective film and subjecting said first photoresist film to a light exposure process using a mask and a development process, thereby forming a first photoresist film pattern; etching an exposed portion of said anti-reflective film using said first photoresist film pattern as a mask, thereby forming an anti-reflective film pattern; removing said first photoresist film pattern and coating a second photoresist film over the entire exposed surface of said resulting structure obtained after the removal of said first photoresist film pattern; subjecting said second photoresist film to a light exposure process using said mask utilized in the forming of said first photoresist film pattern and a development, thereby forming a second photoresist film pattern; and etching an exposed portion of said anti-reflective film pattern and then etching an exposed portion of said lower layer using said second photoresist film pattern as a mask, thereby forming a lower layer pattern.
Claim 2
Independent Claim 178 words
A method for fabricating a semiconductor device, comprising the steps of: coating an anti-reflective film over a lower layer to be patterned; coating a first photoresist film over said anti-reflective film and subjecting said first photoresist film to a light exposure process using a mask and a development process, thereby forming a first photoresist film pattern; etching an exposed portion of said anti-reflective film using said first photoresist film pattern as a mask, thereby forming an anti-reflective film pattern; removing said first photoresist film pattern and coating a second photoresist film over the entire exposed surface of said resulting structure obtained after the removal of said first photoresist film pattern; subjecting said second photoresist film to a light exposure process using said mask utilized in the forming of said first photoresist film pattern and a development, thereby forming a second photoresist film pattern; and etching an exposed portion of said anti-reflective film pattern and then etching an exposed portion of said lower layer using said second photoresist film pattern as a mask, thereby forming a lower layer pattern.
Claim 3
Dependent Claim 22 words
A method in accordance with claim 1, wherein the anti-reflective film is comprised of a film exhibiting a high light absorption rate.
Claim 4
Dependent Claim 26 words
A method in accordance with claim 1, wherein the first photoresist film has a thickness of about 5,000 Å enabling the anti-reflective film to be patterned.
Claim 5
Dependent Claim 20 words
A method in accordance with claim 1, wherein the anti-reflective film has a thickness of 250 Å to 2,000 Å.
Claim 6
Dependent Claim 20 words
A method in accordance with claim 1, wherein both the first and second photoresist films are of a positive type.
Claim 7
Dependent Claim 24 words
A method in accordance with claim 1, wherein the anti-reflective film is comprised of an Si 3 N 4 film or a TiN film.

References Cited (Backward Citations)

US4820611A Cited
US5374503A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2000-06-02 2000-12-02 2001-06-03 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2004-06-02 2004-12-02 2005-06-03 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2008-06-02 2008-12-02 2009-06-03 $7700.00 Window Closed / Lapsed

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