EP0123813A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Dry etching method for organic material layers
Assignee: Toshiba Corp
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Filing: 1984-02-24
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Granted: —
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Expires: 2004-02-24
Abstract
Abstract A dry etching method for organic material layers is disclosed which utilizes a parallel plate electrode type plasma etching apparatus. An etching gas containing nitrogen as its primary constituent is introduced into the apparatus, and then the organic material layers are anisotropically etched by applying a high frequency electric power to the electrodes to produce a plasma.
Inventors
- 👤 Iwao C/O Patent Division Higashikawa
- 👤 Tsunetoshi C/O Patent Division Arikado
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 07:53
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/286; H10P50/287; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/948; Y10S438/95
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
123 words
A dry etching method for etching an organic material layer (43, 73) of a workpiece (14, 30, 60) comprising the steps of: mounting said workpiece (14, 30, 60) on a cathode (13) in a parallel plate electrode type dry etching apparatus having an etching chamber (10) containing an anode (12) and said cathode (13) facing said anode (12), said workpiece having an etching mask layer (44a, 45a, 74a, 75a) on said organic material layer (43, 73); introducing a gas into said etching chamber; and applying a high frequency electric power between said anode and said cathode while introducing said gas to produce a plasma to thereby selectively etch the organic material layer, characterized in that said gas contains nitrogen as its primary constituent,
Claim 2
Dependent Claim
123 words
A dry etching method for etching an organic material layer (43, 73) of a workpiece (14, 30, 60) comprising the steps of: mounting said workpiece (14, 30, 60) on a cathode (13) in a parallel plate electrode type dry etching apparatus having an etching chamber (10) containing an anode (12) and said cathode (13) facing said anode (12), said workpiece having an etching mask layer (44a, 45a, 74a, 75a) on said organic material layer (43, 73); introducing a gas into said etching chamber; and applying a high frequency electric power between said anode and said cathode while introducing said gas to produce a plasma to thereby selectively etch the organic material layer, characterized in that said gas contains nitrogen as its primary constituent,
Claim 3
Dependent Claim
44 words
A dry etching method according to claim 1 wherein the high frequency electric power and the gas pressure in said etching chamber (10) are set to keep the cathode drop voltage between said anode (12) and said cathode (13) at or below 1000 volts.
Claim 4
Dependent Claim
24 words
A dry etching method according to claim 1 wherein said gas contains nitrogen and an additive at or below 30 mol% of the total.
Claim 5
Dependent Claim
31 words
A dry etching method according to claim 1 wherein said gas contains at least one selected from the group of N 2 , N 2 0, NO and NO 2 .
Claim 6
Dependent Claim
33 words
A dry etching method according to claim 1 wherein said gas further contains at least one additive selected from the group of H 2 , SO 2 , CO and CO 2 .
Claim 7
Dependent Claim
35 words
A dry etching method according to claim 1 wherein said gas consists of a mixture of N 2 and 0 2 , the amount of O 2 being equal to or less than 30 mol%.
References Cited (Backward Citations)
No citation records indexed.
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