US5885867A
Expired / Lapsed
US
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Methods of forming hemispherical grained silicon layers including anti-nucleation gases
Assignee: Samsung Electronics Co Ltd
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Filing: 1997-12-03
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Granted: 1999-03-23
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Expires: 2017-12-03
Abstract
Abstract A method of forming a hemispherical grained silicon layer includes the step of forming a first amorphous silicon layer on an integrated circuit substrate by exposing the integrated circuit substrate to a first atmosphere including a silicon source gas and an anti-nucleation gas. A hemispherical grained silicon layer is formed on the amorphous silicon layer opposite the substrate. The anti-nucleation gas can be nitrogen oxide or oxygen.
Inventors
- 👤 Hyun-bo Shin
- 👤 Jong-Young Kim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 23:17
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/711; H10D1/712
Claims Analysis
Total Claims: 33
Claim 1
Independent Claim
59 words
A method of forming a hemispherical grained silicon layer comprising the steps of: forming a first amorphous silicon layer on an integrated circuit substrate by exposing said integrated circuit substrate to a first atmosphere including a silicon source gas and an anti-nucleation gas; and forming a hemispherical grained silicon (HSG) layer on said amorphous silicon layer opposite said substrate.
Claim 2
Independent Claim
59 words
A method of forming a hemispherical grained silicon layer comprising the steps of: forming a first amorphous silicon layer on an integrated circuit substrate by exposing said integrated circuit substrate to a first atmosphere including a silicon source gas and an anti-nucleation gas; and forming a hemispherical grained silicon (HSG) layer on said amorphous silicon layer opposite said substrate.
Claim 3
Dependent Claim
29 words
A method according to claim 1 wherein said anti-nucleation gas comprises a gas chosen from the group consisting of nitrogen oxide (N 2 O) and oxygen (O 2 ).
Claim 4
Dependent Claim
58 words
A method according to claim 1 wherein said step of forming said hemispherical grained silicon layer is preceded by the step of: forming a second amorphous silicon layer on said first amorphous silicon layer opposite said substrate by exposing said integrated circuit substrate to a second atmosphere including said silicon source gas but not including said anti-nucleation gas.
Claim 5
Dependent Claim
18 words
A method according to claim 1 wherein said hemispherical grained silicon layer comprises a hemispherical grained polysilicon layer.
Claim 6
Dependent Claim
31 words
A method according to claim 1 wherein said silicon source gas comprises a gas chosen from the group consisting of silane (SiH 4 ) and disilane (Si 2 H 6 ).
Claim 7
Dependent Claim
24 words
A method according to claim 1 wherein said first amorphous silicon layer has a thickness in the range of 800 Angstroms to 1200 Angstroms.
Claim 8
Dependent Claim
31 words
A method according to claim 1 wherein said step of forming said first amorphous silicon layer is performed at a temperature in the range of about 450° C. to 550° C.
Claim 9
Dependent Claim
14 words
A method according to claim 1 wherein said first atmosphere comprises a dopant gas.
Claim 10
Dependent Claim
34 words
A method according to claim 8 wherein said dopant gas comprises a gas chosen from the group consisting of phosphine (PH 3 ), arsine (AsH 3 ), and diborane (B 2 H 6 ).
Claim 11
Dependent Claim
36 words
A method according to claim 1 further comprising the steps of: forming a dielectric layer on said hemispherical grained silicon layer; and forming a conductive layer on said dielectric layer opposite said hemispherical grained silicon layer.
Claim 12
Dependent Claim
86 words
A method according to claim 10 wherein said step of forming said first amorphous silicon layer is preceded by the steps of: forming a memory cell access transistor on said integrated circuit substrate; and forming an insulating layer on said integrated circuit substrate and on said memory cell access transistor wherein said insulating layer has a contact hole therein exposing a portion of said memory cell access transistor and wherein said first amorphous silicon layer is formed on said insulating layer and in said contact hole.
Claim 13
Independent Claim
80 words
A method of forming a capacitor comprising the steps of: forming a first amorphous silicon layer on an integrated circuit substrate by exposing said integrated circuit substrate to a first atmosphere including a silicon source gas and an anti-nucleation gas; forming a hemispherical grained silicon (HSG) layer on said amorphous silicon layer opposite said substrate; forming a dielectric layer on said hemispherical grained silicon layer; and forming a conductive layer on said dielectric layer opposite said hemispherical grained silicon layer.
Claim 14
Independent Claim
80 words
A method of forming a capacitor comprising the steps of: forming a first amorphous silicon layer on an integrated circuit substrate by exposing said integrated circuit substrate to a first atmosphere including a silicon source gas and an anti-nucleation gas; forming a hemispherical grained silicon (HSG) layer on said amorphous silicon layer opposite said substrate; forming a dielectric layer on said hemispherical grained silicon layer; and forming a conductive layer on said dielectric layer opposite said hemispherical grained silicon layer.
Claim 15
Dependent Claim
29 words
A method according to claim 12 wherein said anti-nucleation gas comprises a gas chosen from the group consisting of nitrogen oxide (N 2 O) and oxygen (O 2 ).
Claim 16
Dependent Claim
58 words
A method according to claim 12 wherein said step of forming said hemispherical grained silicon layer is preceded by the step of: forming a second amorphous silicon layer on said first amorphous silicon layer opposite said substrate by exposing said integrated circuit substrate to a second atmosphere including said silicon source gas but not including said anti-nucleation gas.
Claim 17
Dependent Claim
18 words
A method according to claim 12 wherein said hemispherical grained silicon layer comprises a hemispherical grained polysilicon layer.
Claim 18
Dependent Claim
31 words
A method according to claim 12 wherein said silicon source gas comprises a gas chosen from the group consisting of silane (SiH 4 ) and disilane (Si 2 H 6 ).
Claim 19
Dependent Claim
24 words
A method according to claim 12 wherein said first amorphous silicon layer has a thickness in the range of 800 Angstroms to 1200 Angstroms.
Claim 20
Dependent Claim
30 words
A method according to claim 12 wherein said step of forming said first amorphous silicon layer is performed at a temperature in the range of 450° C. to 550° C.
Claim 21
Dependent Claim
14 words
A method according to claim 12 wherein said first atmosphere comprises a dopant gas.
Claim 22
Dependent Claim
34 words
A method according to claim 19 wherein said dopant gas comprises a gas chosen from the group consisting of phosphine (PH 3 ), arsine (AsH 3 ), and diborane (B 2 H 6 ).
Claim 23
Dependent Claim
86 words
A method according to claim 12 wherein said step of forming said first amorphous silicon layer is preceded by the steps of: forming a memory cell access transistor on said integrated circuit substrate; and forming an insulating layer on said integrated circuit substrate and on said memory cell access transistor wherein said insulating layer has a contact hole therein exposing a portion of said memory cell access transistor and wherein said first amorphous silicon layer is formed on said insulating layer and in said contact hole.
Claim 24
Independent Claim
132 words
A method of forming an integrated circuit memory device comprising the steps of: forming a memory cell access transistor on an integrated circuit substrate; forming an insulating layer on said integrated circuit substrate and on said memory cell access transistor wherein said insulating layer has a contact hole therein exposing a portion of said memory cell access transistor; forming an first amorphous silicon layer on said insulating layer and in said contact hole by exposing said integrated circuit substrate to a first atmosphere including a silicon source gas and an anti-nucleation gas; forming a hemispherical grained silicon (HSG) layer on said amorphous silicon layer opposite said substrate; forming a dielectric layer on said hemispherical grained silicon layer; and forming a conductive layer on said dielectric layer opposite said hemispherical grained silicon layer.
Claim 25
Independent Claim
132 words
A method of forming an integrated circuit memory device comprising the steps of: forming a memory cell access transistor on an integrated circuit substrate; forming an insulating layer on said integrated circuit substrate and on said memory cell access transistor wherein said insulating layer has a contact hole therein exposing a portion of said memory cell access transistor; forming an first amorphous silicon layer on said insulating layer and in said contact hole by exposing said integrated circuit substrate to a first atmosphere including a silicon source gas and an anti-nucleation gas; forming a hemispherical grained silicon (HSG) layer on said amorphous silicon layer opposite said substrate; forming a dielectric layer on said hemispherical grained silicon layer; and forming a conductive layer on said dielectric layer opposite said hemispherical grained silicon layer.
Claim 26
Dependent Claim
29 words
A method according to claim 22 wherein said anti-nucleation gas comprises a gas chosen from the group consisting of nitrogen oxide (N 2 O) and oxygen (O 2 ).
Claim 27
Dependent Claim
58 words
A method according to claim 22 wherein said step of forming said hemispherical grained silicon layer is preceded by the step of: forming a second amorphous silicon layer on said first amorphous silicon layer opposite said substrate by exposing said integrated circuit substrate to a second atmosphere including said silicon source gas but not including said anti-nucleation gas.
Claim 28
Dependent Claim
18 words
A method according to claim 22 wherein said hemispherical grained silicon layer comprises a hemispherical grained polysilicon layer.
Claim 29
Dependent Claim
31 words
A method according to claim 22 wherein said silicon source gas comprises a gas chosen from the group consisting of silane (SiH 4 ) and disilane (Si 2 H 6 ).
Claim 30
Dependent Claim
24 words
A method according to claim 22 wherein said first amorphous silicon layer has a thickness in the range of 800 Angstroms to 1200 Angstroms.
Claim 31
Dependent Claim
30 words
A method according to claim 22 wherein said step of forming said first amorphous silicon layer is performed at a temperature in the range of 450° C. to 550° C.
Claim 32
Dependent Claim
14 words
A method according to claim 22 wherein said first atmosphere comprises a dopant gas.
Claim 33
Dependent Claim
34 words
A method according to claim 29 wherein said dopant gas comprises a gas chosen from the group consisting of phosphine (PH 3 ), arsine (AsH 3 ), and diborane (B 2 H 6 ).
References Cited (Backward Citations)
US5623243A
Cited
US5366917A
Cited
US5234862A
Cited
JPH04286151A
Cited
US5385863A
Cited
US5661340A
Cited
US5372962A
Cited
US5405801A
Cited
US5394012A
Cited
US5616511A
Cited
US5567637A
Cited
US5464791A
Cited
US5590051A
Cited
US5486488A
Cited
US5543347A
Cited
US5639689A
Cited
US5595937A
Cited
US5663085A
Cited
US5830793A
Cited
US5753559A
Cited
US5554557A
Cited
US5821152A
Cited
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