Patent US5873942A successfully refreshed from Google Patents.
US5873942A
Expired / Lapsed
US
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Apparatus and method for low pressure chemical vapor deposition using multiple chambers and vacuum pumps
Assignee: Samsung Electronics Co Ltd
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Filing: 1997-08-06
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Granted: 1999-02-23
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Expires: 2017-08-06
Abstract
Abstract An apparatus for low pressure chemical vapor deposition for fabricating a semiconductor device comprises a group of reaction chambers, a group of high-vacuum pumps connected to the reaction chambers, a group of gate valves connected to the high-vacuum pumps, and a low-vacuum pump connected to the gate valves. There are fewer gate valves than high-vacuum pumps. A method for fabricating a semiconductor device using the above apparatus includes the sequence and duration of opening gate valves, injecting reaction gases, and pumping with the low vacuum pump. According to the present invention, since the number of pumps is reduced, the cost for installation, operation and maintenance of the semiconductor device fabrication apparatus is reduced.
Inventors
- 👤 Jun Sig Park
- 👤 Young Sun Kim
- 👤 Jung Ki Kim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:04
CPC Classifications
F; F04; F04D; F04D13/00; C; C23; C23C; C23C16/00; C23C16/44; C23C16/54; C23C16/52; Y; Y10; Y10S; Y10S438/00; Y10S438/907; Y10S438/908; Y10S438/909; Y10S438/935
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
70 words
An apparatus for low pressure chemical vapor deposition for fabricating a semiconductor device, said apparatus comprising: a first group of reaction chambers connected to a wafer transfer chamber; a second group of high-vacuum pumps connected to said reaction chambers; a third group of gate valves connected to said high-vacuum pumps; and a low-vacuum pump connected to said gate valves, wherein said third group has fewer members than said second group.
Claim 2
Independent Claim
70 words
An apparatus for low pressure chemical vapor deposition for fabricating a semiconductor device, said apparatus comprising: a first group of reaction chambers connected to a wafer transfer chamber; a second group of high-vacuum pumps connected to said reaction chambers; a third group of gate valves connected to said high-vacuum pumps; and a low-vacuum pump connected to said gate valves, wherein said third group has fewer members than said second group.
Claim 3
Dependent Claim
24 words
The apparatus of claim 1, wherein each high-vacuum pump of said second group being connected to a single reaction chamber of said first group.
Claim 4
Dependent Claim
60 words
The apparatus of claim 2, wherein said third group having the same number. of members as said first group, and wherein each gate valve of said third group communicating with corresponding ones of said reaction chambers of said first group, said each gate valve being connected to those of said high-vacuum pumps which are connected to said corresponding reaction chamber.
Claim 5
Dependent Claim
20 words
The apparatus of claim 3, further comprising an automatic pressure controller connected to said gate valves and said reaction chambers.
Claim 6
Dependent Claim
34 words
The apparatus of claim 1, wherein said high-vacuum pumps maintain the internal pressure of each reaction chamber of said first group in the range from about 10 -4 Torr to about 10 -4 Torr.
Claim 7
Dependent Claim
12 words
The apparatus of claim 1, wherein said high-vacuum pumps are turbo pumps.
Claim 8
Dependent Claim
12 words
The apparatus of claim 1, wherein said high-vacuum pumps are ion pumps.
Claim 9
Dependent Claim
34 words
The apparatus of claim 1, wherein said low-vacuum pump maintains the internal pressure of each reaction chamber of said first group in the range from about 10 -1 Torr to about 10 -4 Torr.
Claim 10
Dependent Claim
13 words
The apparatus of claim 1, wherein said low-vacuum pump is a dry pump.
Claim 11
Independent Claim
50 words
An apparatus for low pressure chemical vapor deposition for fabricating a semiconductor device, said apparatus comprising: a first group of reaction chambers connected to a wafer transfer chamber; a second group of high-vacuum pumps connected to said reaction chambers; and a low-vacuum pump in direct communication with said high-vacuum pumps.
Claim 12
Independent Claim
50 words
An apparatus for low pressure chemical vapor deposition for fabricating a semiconductor device, said apparatus comprising: a first group of reaction chambers connected to a wafer transfer chamber; a second group of high-vacuum pumps connected to said reaction chambers; and a low-vacuum pump in direct communication with said high-vacuum pumps.
Claim 13
Dependent Claim
34 words
The apparatus of claim 10, wherein said high-vacuum pumps maintain the internal pressure of each reaction chamber of said first group in the range from about 10 -4 Torr to about 10 -10 Torr.
Claim 14
Dependent Claim
12 words
The apparatus of claim 10, wherein said high-vacuum pumps are turbo pumps.
Claim 15
Dependent Claim
12 words
The apparatus of claim 10, wherein said high-vacuum pumps are ion pumps.
Claim 16
Dependent Claim
34 words
The apparatus of claim 10, wherein said low-vacuum pump maintains the internal pressure of each reaction chamber of said first group in the range from about 10 -1 Torr to about 10 -4 Torr.
Claim 17
Dependent Claim
13 words
The apparatus of claim 10, wherein said low-vacuum pump is a dry pump.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-02-22 | 2002-08-24 | 2003-02-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-02-22 | 2006-08-24 | 2007-02-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-02-22 | 2010-08-24 | 2011-02-23 | $7700.00 | Window Closed / Lapsed |