Abstract A method for encapsulating an integrated semiconductor circuit. The semiconductor circuit is mounted onto the support surface of a so-called lead frame. Connecting wires are attached between the contact pads of the semiconductor circuit and selected parts of the lead frame. A predetermined volume of radiation-transparent plastic is supplied at a side of the semiconductor circuit opposite the side which is attached to the supporting surface, which plastic has a glass temperature lower than the temperature which is used for carrying out step c). A plastic package is produced by means of a mould, which package surrounds at least the semiconductor circuit, the supporting surface, the connecting wires and part of the lead frame.
A method for encapsulating an integrated semiconductor circuit, comprising the following sequential steps: a) mounting the semiconductor circuit on a supporting surface of a lead frame; b) attaching connecting wires between contact pads of the semiconductor circuit and the lead frame; c) depositing a volume of radiation-transparent fluid resin on the semiconductor circuit, the resin having a lower glass transition temperature than a temperature to be used in step e), the resin having a consistency during said depositing step such that a substantially spherical layer of resin remains on the semiconductor circuit; d) partially hardening the spherical layer of resin; e) molding a plastic package to surround at least the semiconductor circuit, the supporting surface, the connecting wires and part of the lead frame, thereby encapsulating said semiconductor circuit, such that at least part of the radiation-transparent layer is not covered by said plastic package and forms a radiation transparent window to the semiconductor circuit.
Claim 2
Independent Claim
155 words
A method for encapsulating an integrated semiconductor circuit, comprising the following sequential steps: a) mounting the semiconductor circuit on a supporting surface of a lead frame; b) attaching connecting wires between contact pads of the semiconductor circuit and the lead frame; c) depositing a volume of radiation-transparent fluid resin on the semiconductor circuit, the resin having a lower glass transition temperature than a temperature to be used in step e), the resin having a consistency during said depositing step such that a substantially spherical layer of resin remains on the semiconductor circuit; d) partially hardening the spherical layer of resin; e) molding a plastic package to surround at least the semiconductor circuit, the supporting surface, the connecting wires and part of the lead frame, thereby encapsulating said semiconductor circuit, such that at least part of the radiation-transparent layer is not covered by said plastic package and forms a radiation transparent window to the semiconductor circuit.