Second implanted matrix for agglomeration control and thermal stability

Claim 2

A semiconductor device structure situated on a semiconductor wafer and comprising: a silicon layer situated over said semiconductor wafer; a metallization layer comprising a refractory metal silicide over said silicon layer; a first diffusion barrier matrix comprising a plurality of first ions implanted within said semiconductor device structure so as to substantially define an interface between said silicon layer and said metallization layer; and a second diffusion barrier matrix comprising a plurality of second ions situated below a top surface of said metallization layer, said second diffusion barrier matrix being separated from and positioned over said first diffusion barrier matrix.

Claim 3

The semiconductor device structure as defined in claim 1, further comprising an oxide layer on a silicon substrate of said semiconductor wafer and under said silicon layer.

Claim 4

The semiconductor device structure as defined in claim 2, wherein said silicon layer is substantially composed of polysilicon and is patterned into a polysilicon gate layer, said metallization layer is patterned so as to cover the top of said polysilicon gate layer, and said oxide layer is patterned into a gate oxide layer beneath said polysilicon gate layer, said metallization layer extending laterally upon said polysilicon gate layer to terminate at a side wall spacer, said gate oxide layer extending laterally beneath said polysilicon gate layer to terminate at said side wall spacer, said side wall spacer making contact with said gate oxide layer, said polysilicon gate layer, and said metallization layer, said side wall spacer extending laterally to a refractory metal silicide layer situated on said silicon substrate, said refractory metal silicide layer extending laterally from said side wall spacer to a field oxide region situated on said silicon substrate.

Claim 5

The semiconductor device structure as defined in claim 3, wherein said metallization layer comprises titanium.

Claim 6

The semiconductor device structure as defined in claim 1, wherein said first and second diffusion barrier matrices comprise elements selected from the group consisting of P, N, Co, W, and Mo, and combinations thereof.

Claim 7

The semiconductor device structure as defined in claim 1, wherein said first diffusion barrier matrix comprises phosphorus ions, and said second diffusion barrier matrix comprises nitrogen ions.

Claim 8

An MOS device structure situated on a semiconductor wafer and comprising: a gate stack situated over said semiconductor wafer, said gate stack including: a gate oxide layer over said semiconductor wafer; a polysilicon gate layer on said gate oxide layer; a metallization layer over said polysilicon gate layer; a first diffusion barrier matrix comprising a plurality of first ions implanted within said MOS device structure so as to substantially define an interface between said polysilicon gate layer and said metallization layer; and a second diffusion barrier matrix comprising a plurality of second ions situated below a top surface of said metallization layer, said second diffusion barrier matrix being separated from and positioned over said first diffusion barrier matrix; a side wall spacer, wherein said metallization layer, said polysilicon gate layer, and said gate oxide layer all extend laterally to terminate at said side wall spacer, said side wall spacer making contact with said gate oxide layer, said polysilicon gate layer, and said metallization layer; a refractory metal silicide layer situated on a source/drain region within a silicon substrate on said semiconductor wafer, said side wall spacer extending laterally to said refractory metal silicide layer; and a field oxide region situated on said silicon substrate, said refractory metal silicide layer extending laterally from said side wall spacer to said field oxide region.

Claim 9

An MOS device structure situated on a semiconductor wafer and comprising: a gate stack situated over said semiconductor wafer, said gate stack including: a gate oxide layer over said semiconductor wafer; a polysilicon gate layer on said gate oxide layer; a metallization layer over said polysilicon gate layer; a first diffusion barrier matrix comprising a plurality of first ions implanted within said MOS device structure so as to substantially define an interface between said polysilicon gate layer and said metallization layer; and a second diffusion barrier matrix comprising a plurality of second ions situated below a top surface of said metallization layer, said second diffusion barrier matrix being separated from and positioned over said first diffusion barrier matrix; a side wall spacer, wherein said metallization layer, said polysilicon gate layer, and said gate oxide layer all extend laterally to terminate at said side wall spacer, said side wall spacer making contact with said gate oxide layer, said polysilicon gate layer, and said metallization layer; a refractory metal silicide layer situated on a source/drain region within a silicon substrate on said semiconductor wafer, said side wall spacer extending laterally to said refractory metal silicide layer; and a field oxide region situated on said silicon substrate, said refractory metal silicide layer extending laterally from said side wall spacer to said field oxide region.

Claim 10

The MOS device structure as defined in claim 7, wherein said first and second diffusion barrier matrices comprise elements selected from the group consisting of P, N, Co, W, and Mo, and combinations thereof.

Claim 11

The MOS device structure as defined in claim 7, wherein said first diffusion barrier matrix comprises phosphorus ions at a concentration of about 2×10 13 ions/cm 2 , and said second barrier matrix comprises nitrogen ions at a concentration of about 2×10 13 ions/cm 2 .

Claim 12

An MOS device structure situated on a semiconductor wafer and comprising: a gate stack situated over said semiconductor wafer, said gate stack including: a gate oxide layer over said semiconductor wafer; a polysilicon gate layer on said gate oxide layer; a titanium silicide layer over said polysilicon gate layer; a first diffusion barrier matrix comprising phosphorus ions implanted within said MOS device structure so as to substantially define an interface between said polysilicon gate layer and said titanium silicide layer: and a second diffusion barrier matrix comprising nitrogen ions situated below a top surface of said metallization layers said second diffusion barrier matrix being separated from and positioned over said first diffusion barrier matrix; a side wall spacer, wherein said titanium silicide layer, said polysilicon gate layer, and said gate oxide layer all extend laterally to terminate at said side wall spacer, said side wall spacer making contact with said gate oxide layer, said polysilicon gate layer, and said titanium silicide layer; a titanium silicide contact layer situated on a source/drain region within a silicon substrate on said semiconductor wafer, said side wall spacer extending laterally to said titanium silicide contact layer; and a field oxide region situated on said silicon substrate, said titanium silicide contact layer extending laterally from said side wall spacer to said field oxide region.

Claim 13

An MOS device structure situated on a semiconductor wafer and comprising: a gate stack situated over said semiconductor wafer, said gate stack including: a gate oxide layer over said semiconductor wafer; a polysilicon gate layer on said gate oxide layer; a titanium silicide layer over said polysilicon gate layer; a first diffusion barrier matrix comprising phosphorus ions implanted within said MOS device structure so as to substantially define an interface between said polysilicon gate layer and said titanium silicide layer: and a second diffusion barrier matrix comprising nitrogen ions situated below a top surface of said metallization layers said second diffusion barrier matrix being separated from and positioned over said first diffusion barrier matrix; a side wall spacer, wherein said titanium silicide layer, said polysilicon gate layer, and said gate oxide layer all extend laterally to terminate at said side wall spacer, said side wall spacer making contact with said gate oxide layer, said polysilicon gate layer, and said titanium silicide layer; a titanium silicide contact layer situated on a source/drain region within a silicon substrate on said semiconductor wafer, said side wall spacer extending laterally to said titanium silicide contact layer; and a field oxide region situated on said silicon substrate, said titanium silicide contact layer extending laterally from said side wall spacer to said field oxide region.

Claim 14

A semiconductor device structure as defined in claim 1, wherein said silicon layer comprises a material selected from the group consisting of monocrystalline silicon, amorphous silicon, and polysilicon.

Claim 15

A semiconductor device structure as defined in claim 1, wherein said metallization layer comprises a material selected from the group consisting of Ti, W, Co, and Mo, and combinations thereof.

Claim 16

A semiconductor device structure as defined in claim 1, wherein said first diffusion barrier matrix comprises nitrogen ions.

Claim 17

A semiconductor device structure as defined in claim 1, wherein said phosphorus ions are positioned within said first diffusion barrier matrix at a concentration of about 2×10 13 ions/cm 2 .

Claim 18

A semiconductor device structure as defined in claim 1, wherein said nitrogen ions are positioned within said second diffusion barrier matrix at a concentration of about 2×10 13 ions/cm 2 .

Claim 19

A semiconductor device structure as defined in claim 3, wherein: said field oxide region has a thickness in a range from about 1,000 Å to about 3,000 Å; said gate oxide layer has a thickness in a range from about 50 Å to about 150 Å; and said metallization layer has a thickness in a range from about 500 Å to about 2,000 Å.

Claim 20

An MOS device structure as defined in claim 10, wherein: said phosphorus ions are positioned within said first diffusion barrier matrix at a concentration of about 2×10 13 ions/cm 2 ; and said nitrogen ions are positioned within said second diffusion barrier matrix at a concentration of about 2×10 13 ions/cm 2 .

Claim 21

A semiconductor device structure situated on a semiconductor wafer and comprising: a gate structure situated over said semiconductor wafer, said gate structure including: a gate oxide layer over said semiconductor wafer, said gate oxide layer having a thickness in a range from about 50 Å to about 150 Å; a silicon gate layer on said gate oxide layer, said silicon gate layer being substantially composed of a material selected from the group consisting of monocrystalline silicon, amorphous silicon, and polysilicon; a metallization layer over said silicon gate layer, said metallization layer comprising a silicide of a refractory metal selected from the group consisting of titanium, tungsten, cobalt, molybdenum, and combinations thereof, said metallization layer having a thickness in a range from about 500 Å to about 2,000 Å; a first diffusion barrier matrix comprising first ions selected from the group consisting of phosphorus ions, nitrogen ions, cobalt ions, tungsten ions, and molybdenum ions, said first ions being implanted in said semiconductor device structure so as to substantially define an interface between said silicon gate layer and said metallization layer; and a second diffusion barrier matrix comprising second ions selected from the group consisting of phosphorus ions, nitrogen ions, cobalt ions, tungsten ions, and molybdenum ions, said second ions being situated below a top surface of said metallization layer, said second diffusion barrier matrix being separated from and positioned over said first diffusion barrier matrix; a side wall spacer, wherein said metallization layer, said silicon gate layer, and said gate oxide layer all extend laterally to terminate at said side wall spacer, said side wall spacer making contact with said gate oxide layer, said silicon gate layer, and said metallization layer; a refractory metal silicide contact layer situated on a source/drain region within a silicon substrate on said semiconductor wafer, said side wall spacer extending laterally to said refractory metal silicide contact layer; and a field oxide region situated on said silicon substrate, said refractory metal silicide contact layer extending laterally from said side wall spacer to said field oxide region, said field oxide region having a thickness in a range from about 1,000 Å to about 3,000 Å.

Claim 22

A semiconductor device structure situated on a semiconductor wafer and comprising: a gate structure situated over said semiconductor wafer, said gate structure including: a gate oxide layer over said semiconductor wafer, said gate oxide layer having a thickness in a range from about 50 Å to about 150 Å; a silicon gate layer on said gate oxide layer, said silicon gate layer being substantially composed of a material selected from the group consisting of monocrystalline silicon, amorphous silicon, and polysilicon; a metallization layer over said silicon gate layer, said metallization layer comprising a silicide of a refractory metal selected from the group consisting of titanium, tungsten, cobalt, molybdenum, and combinations thereof, said metallization layer having a thickness in a range from about 500 Å to about 2,000 Å; a first diffusion barrier matrix comprising first ions selected from the group consisting of phosphorus ions, nitrogen ions, cobalt ions, tungsten ions, and molybdenum ions, said first ions being implanted in said semiconductor device structure so as to substantially define an interface between said silicon gate layer and said metallization layer; and a second diffusion barrier matrix comprising second ions selected from the group consisting of phosphorus ions, nitrogen ions, cobalt ions, tungsten ions, and molybdenum ions, said second ions being situated below a top surface of said metallization layer, said second diffusion barrier matrix being separated from and positioned over said first diffusion barrier matrix; a side wall spacer, wherein said metallization layer, said silicon gate layer, and said gate oxide layer all extend laterally to terminate at said side wall spacer, said side wall spacer making contact with said gate oxide layer, said silicon gate layer, and said metallization layer; a refractory metal silicide contact layer situated on a source/drain region within a silicon substrate on said semiconductor wafer, said side wall spacer extending laterally to said refractory metal silicide contact layer; and a field oxide region situated on said silicon substrate, said refractory metal silicide contact layer extending laterally from said side wall spacer to said field oxide region, said field oxide region having a thickness in a range from about 1,000 Å to about 3,000 Å.

Claim 23

A semiconductor device structure as defined in claim 18, wherein said refractory metal of said metallization layer is also included in said refractory metal silicide layer.