Contact structure for connecting an electrode to a semiconductor

Claim 2

A contact structure for connecting a semiconductor device to a wiring electrode, comprising: a semiconductor region forming a part of the semiconductor device, said semiconductor region having a major surface; a first contact layer of reduced resistivity, said first contact layer having an upper major surface and a lower major surface and provided on the major surface of the semiconductor region; an insulating structure having an upper major surface and a lower major surface, said insulating structure provided on the upper major surface of the first contact layer to bury the first contact layer underneath; a penetrating hole opened through the insulating structure to expose a part of the upper major surface of the first contact layer, said penetrating hole being defined by a side wall extending from the lower major surface to the upper major surface of the insulating structure, said penetrating hole being further defined by a bottom edge at the lower major surface of the insulating structure and a top edge at the upper major surface of the insulating structure; a second contact layer of reduced resistivity provided on the part of the upper major surface of the first contact layer exposed by the penetrating hole, said second contact layer extending from the bottom edge of the penetrating hole along the side wall to beneath the top edge of the penetrating hole, said second contact layer having a concaved upper surface such that the second contact layer has a wall thickness, measured perpendicularly to the side wall of the penetrating hole, which is maximum at the bottom edge of the penetrating hole and decreases towards the top edge; a conductor layer forming the wiring electrode provided above the second contact layer and extending over the concaved upper surface of the second contact layer and extending over the upper major surface of the insulating structure; and a diffusion barrier layer interposed between the second contact layer and the conductor layer and in contact with both the second contact layer and the conductor layer, said diffusion barrier layer extending continuously along the concaved upper surface of the second contact layer and extending directly on the upper major surface of the insulating structure, said diffusion barrier layer preventing a reaction between the second contact layer and the conductor layer.

Claim 3

A contact structure for connecting a semiconductor device to a wiring electrode, comprising: a semiconductor region forming a part of the semiconductor device, said semiconductor region having a major surface; a first contact layer of reduced resistivity, said first contact layer having an upper major surface and a lower major surface and provided on the major surface of the semiconductor region; an insulating structure having an upper major surface and a lower major surface, said insulating structure provided on the upper major surface of the first contact layer to bury the first contact layer underneath; a penetrating hole opened through the insulating structure to expose a part of the upper major surface of the first contact layer, said penetrating hole being defined by a side wall extending from the lower major surface to the upper major surface of the insulating structure, said penetrating hole being further defined by a bottom edge at the lower major surface of the insulating structure and a top edge at the upper major surface of the insulating structure; a second contact layer of reduced resistivity provided on the part of the upper major surface of the first contact layer exposed by the penetrating hole, said second contact layer containing silicon and extending from the bottom edge of the penetrating hole along the side wall to beneath the top edge of the penetrating hole, said second contact layer having a concaved upper surface such that the second contact layer has a wall thickness, measured perpendicularly to the side wall of the penetrating hole, which is maximum at the bottom edge of the penetrating hole and decreases towards the top edge; a conductor layer forming the wiring electrode provided above the second contact layer and extending over the concaved upper surface of the second contact layer and extending over the upper major surface of the insulating structure, said conductor layer having a pattern for wiring the semiconductor device when viewed in a direction perpendicular to the major surface of the semiconductor region; and a diffusion barrier layer interposed between the second contact layer and the conductor layer and in contact with both the second contact layer and the conductor layer, said diffusion barrier layer extending continuously along the concaved upper surface of the second contact layer and extending directly on the upper major surface of the insulating structure, said diffusion barrier layer having a pattern corresponding to the pattern of the conductor layer and preventing a reaction between the second contact layer and the conductor layer, caused by a diffusion of silicon forming the second contact layer into the conductor layer.

Claim 4

A contact structure for connecting a semiconductor device to a wiring electrode, comprising: a semiconductor region forming a part of the semiconductor device, said semiconductor region having a major surface; a first contact layer of reduced resistivity, said first contact layer having an upper major surface and a lower major surface and provided on the major surface of the semiconductor region; an insulating structure having an upper major surface and a lower major surface, said insulating structure provided on the upper major surface of the first contact layer to bury the first contact layer underneath; a penetrating hole opened through the insulating structure to expose a part of the upper major surface of the first contact layer, said penetrating hole being defined by a side wall extending from the lower major surface to the upper major surface of the insulating structure, said penetrating hole being further defined by a bottom edge at the lower major surface of the insulating structure and a top edge at the upper major surface of the insulating structure; a second contact layer of reduced resistivity provided on the part of the upper major surface of the first contact layer exposed by the penetrating hole, said second contact layer containing silicon and extending from the bottom edge of the penetrating hole along the side wall to beneath the top edge of the penetrating hole, said second contact layer having a concaved upper surface such that the second contact layer has a wall thickness, measured perpendicularly to the side wall of the penetrating hole, which is maximum at the bottom edge of the penetrating hole and decreases towards the top edge; a conductor layer forming the wiring electrode provided above the second contact layer and extending over the concaved upper surface of the second contact layer and extending over the upper major surface of the insulating structure, said conductor layer having a pattern for wiring the semiconductor device when viewed in a direction perpendicular to the major surface of the semiconductor region; and a diffusion barrier layer interposed between the second contact layer and the conductor layer and in contact with both the second contact layer and the conductor layer, said diffusion barrier layer extending continuously along the concaved upper surface of the second contact layer and extending directly on the upper major surface of the insulating structure, said diffusion barrier layer having a pattern corresponding to the pattern of the conductor layer and preventing a reaction between the second contact layer and the conductor layer, caused by a diffusion of silicon forming the second contact layer into the conductor layer.

Claim 5

A contact structure as claimed in claim 2 in which said semiconductor region comprises silicon, and said first and second contact layers comprise a silicide compound.

Claim 6

A contact structure as claimed in claim 3 in which said first and second contact layers comprise a titanium disilicide.

Claim 7

A contact structure as claimed in claim 2 in which said diffusion barrier layer comprises titanium nitride.

Claim 8

A contact structure as claimed in claim 2 in which said diffusion barrier layer comprises titanium tungstenite.