US5006916A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Vertical-walled contacts for VLSI semiconductor devices
Assignee: Texas Instruments Inc
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Filing: 1987-08-03
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Granted: 1991-04-09
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Expires: 2007-08-03
Abstract
Abstract A contact and interconnect for an MOS VLSI semiconductor device employs a contact hole in an insulator coating; the contact hole has vertical instead of sloped sidewalls. A first metallization is applied by CVD so that the sidewalls will be coated to a uniform thickness, then this first metal is anisotropicalloy etched to leave metal sidewalls. A second metallization is applied by sputtering or evaporation, which provides a more dense and electromigration-resistant coating. A refractory metal layer may be interposed between the metallization and the silicon substrate, and also between the metal interconnect and the insulator, since the insulator usually contains phosphorus.
Inventors
- 👤 Kendall S. Wills
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 13:17
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/057
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
84 words
A semiconductor device comprising: a region in a face of a semiconductor body, an insulator coating on said face having a contact hole over said region, said contact hole having substantially vertical sidewalls, a first coating of chemical vapor deposited metal continuously covering said sidewalls and the bottom of said contact hole but not extending over the face of the insulator coating, and a metal strip extending along the face over said insulator and also extending into said contact hole over said first coating.
Claim 2
Dependent Claim
84 words
A semiconductor device comprising: a region in a face of a semiconductor body, an insulator coating on said face having a contact hole over said region, said contact hole having substantially vertical sidewalls, a first coating of chemical vapor deposited metal continuously covering said sidewalls and the bottom of said contact hole but not extending over the face of the insulator coating, and a metal strip extending along the face over said insulator and also extending into said contact hole over said first coating.
Claim 3
Dependent Claim
37 words
A device according to claim 1 wherein said semiconductor is silicon, said insulator is a phosphosilicate glass, said first coating is metal, and said metal strip is composed of the same said metal as said first coating.
Claim 4
Dependent Claim
22 words
A device according to claim 1 wherein a barrier layer is interposed between said first coating and said region in said face.
Claim 5
Dependent Claim
14 words
A device according to claim 3 wherein said barrier layer is a refractory metal.
Claim 6
Dependent Claim
21 words
A device according to claim 1 wherein alternate layers of different conductors cover said sidewalls to substantially fill said contact hole.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-04-08 | 1994-10-08 | 1995-04-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-04-08 | 1998-10-08 | 1999-04-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-04-08 | 2002-10-08 | 2003-04-09 | $7700.00 | Window Closed / Lapsed |