US5856237A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Insitu formation of TiSi2/TiN bi-layer structures using self-aligned nitridation treatment on underlying CVD-TiSi2 layer
Assignee: Industrial Technology Research Institute
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Filing: 1997-10-20
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Granted: 1999-01-05
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Expires: 2017-10-20
Abstract
Abstract The present invention provides a method of forming a contact structure comprised of a silicon substrate, a titanium silicide layer, a barrier layer (i.e., TiN or TiNO), and a metal layer (e.g., Al or W). There are three embodiments of the invention for forming the titanium silicide layer and two embodiments for forming the barrier layer (TiN or TiNO). The first embodiment for forming a TiSix layer comprises three selective deposition steps with varying TiCl4:SiH4 ratios. After the TiSix contact layer is formed a barrier layer and a metal plug layer are formed thereover to form a contact structure. The method comprises forming a barrier layer 140 over the silicide contact layer 126; and forming a metal plug 160 over the TiN barrier layer 140. The metal plug 160 is composed of Al or W.
Inventors
- 👤 Tzu-Kun Ku
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:29
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/047; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/42; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10D64/01125; H10D64/025; H10W20/033; Y; Y10; Y10S; Y10S438/00; Y10S438/904; Y10S438/909
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
193 words
A method of forming a titanium silicide contact layer on a substrate; comprising the steps of: a) providing a first insulating layer having a contact opening over a substrate; b) simultaneously selectively depositing a silicon layer and an overlying first titanium silicide layer at a first TiCl 4 to Si containing gas flow ratio; c) selectively depositing a second titanium silicide layer over said first titanium silicide layer so that said second titanium silicide layer consumes said silicon layer; said second titanium silicide layer formed at a second TiCl 4 to Si containing gas flow ratio higher than said first ratio whereby the second TiCl 4 to Si containing gas flow ratio causes said second titanium silicide layer to consume said silicon layer; d) selectively depositing a third titanium silicide layer over said second titanium silicide layer at a third TiCl 4 to Si containing gas flow ratio higher than said first ratio and lower than said second ratio and using a chloride containing gas of a material selected from the group consisting of HCl and ClF 3 ; said first, second, and third titanium silicide layers forming a titanium silicide contact layer.
Claim 2
Independent Claim
193 words
A method of forming a titanium silicide contact layer on a substrate; comprising the steps of: a) providing a first insulating layer having a contact opening over a substrate; b) simultaneously selectively depositing a silicon layer and an overlying first titanium silicide layer at a first TiCl 4 to Si containing gas flow ratio; c) selectively depositing a second titanium silicide layer over said first titanium silicide layer so that said second titanium silicide layer consumes said silicon layer; said second titanium silicide layer formed at a second TiCl 4 to Si containing gas flow ratio higher than said first ratio whereby the second TiCl 4 to Si containing gas flow ratio causes said second titanium silicide layer to consume said silicon layer; d) selectively depositing a third titanium silicide layer over said second titanium silicide layer at a third TiCl 4 to Si containing gas flow ratio higher than said first ratio and lower than said second ratio and using a chloride containing gas of a material selected from the group consisting of HCl and ClF 3 ; said first, second, and third titanium silicide layers forming a titanium silicide contact layer.
Claim 3
Dependent Claim
48 words
The method of claim 1 wherein which further includes after step (a) insitu cleaning said substrate using gas selected from the group consisting of SiH 4 and H 2 , at a temperature between 650° and 750° C. and a pressure between about 0.1 mtorr and 5 mtorr.
Claim 4
Dependent Claim
30 words
The method of claim 1 wherein said steps (b) (c) and (d) are performed at a temperature between about 400° and 800° C. and a pressure less than 10 torr.
Claim 5
Dependent Claim
43 words
The method of claim 1 wherein step (b) is performed at a temperature between about 500° and 1000° C., at a pressure between 50 mtorr and 50 torr and said first TiCl4 to Si containing gas flow ratio is between 0.005 and 0.08.
Claim 6
Dependent Claim
42 words
The method of claim 1 wherein step (c) is performed at a temperature between 500° and 1000° C., at a pressure between 50 mtorr and 50 torr, and said second TiCl4 to Si containing gas flow ratio is between 0.2 and 10.
Claim 7
Dependent Claim
41 words
The method of claim 1 wherein step (d) is performed at a temperature between 500° and 1000° C., a pressure between 50 mtorr and 50 torr and said third TiCl4 to Si containing gas flow ratio is between 0.08 and 0.02.
Claim 8
Dependent Claim
25 words
The method of claim 1 wherein said Si containing gas is selected from the group consisting of SiH 4 and SiH 2 Cl 2 .
References Cited (Backward Citations)
US4501769A
Cited
US4608271A
Cited
US4668530A
Cited
US4684542A
Cited
US4851369A
Cited
US4926237A
Cited
US5103272A
Cited
US5104694A
Cited
US5376405A
Cited
US5558910A
Cited
US5344792A
Cited
US5565382A
Cited
US5545592A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-01-04 | 2002-07-06 | 2003-01-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-01-04 | 2006-07-06 | 2007-01-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-01-04 | 2010-07-06 | 2011-01-05 | $7700.00 | Window Closed / Lapsed |