US5843818A
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US
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Methods of fabricating ferroelectric capacitors
Assignee: Samsung Electronics Co Ltd
•
Filing: 1996-12-03
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Granted: 1998-12-01
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Expires: 2016-12-03
Abstract
Abstract Methods of producing ferroelectric capacitors where the electrodes are formed in a contact hole. These methods include the steps of forming an insulating layer on an integrated circuit substrate. A contact hole is then formed through the insulating layer layer to expose a region of the integrated circuit substrate and to define a storage node pattern. A layer of oxidation-resistant conductive material is formed in the contact hole and the insulating layer removed to define a first storage electrode by exposing the layer of oxidation-resistant conductive material. A ferroelectric layer is then formed on the first storage electrode and a second storage electrode is formed on the ferroelectric layer opposite the first storage electrode.
Inventors
- 👤 Suk-ho Joo
- 👤 Jong Moon
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 21:28
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10D; H10D1/00; H10D1/01; H10D1/041; H10D1/042; H10D1/60; H10D1/68; H10D1/682; H10D1/692; H10D1/711; H10D1/716
Claims Analysis
Total Claims: 32
Claim 1
Independent Claim
119 words
A method of fabricating a ferroelectric capacitor, the method comprising the steps of: forming a nitride layer on an integrated circuit substrate; forming an insulating layer on the nitride layer opposite the integrated circuit substrate, the insulating layer including a contact hole through the insulating layer and the nitride layer which exposes a region of the integrated circuit substrate and which defines a storage node pattern; forming a layer of oxidation-resistant conductive material in the contact hole; removing the insulating layer to define a first storage electrode by exposing the layer of oxidation-resistant conductive material; forming a ferroelectric layer on the first storage electrode; and forming a second storage electrode on the ferroelectric layer opposite the first storage electrode.
Claim 2
Independent Claim
119 words
A method of fabricating a ferroelectric capacitor, the method comprising the steps of: forming a nitride layer on an integrated circuit substrate; forming an insulating layer on the nitride layer opposite the integrated circuit substrate, the insulating layer including a contact hole through the insulating layer and the nitride layer which exposes a region of the integrated circuit substrate and which defines a storage node pattern; forming a layer of oxidation-resistant conductive material in the contact hole; removing the insulating layer to define a first storage electrode by exposing the layer of oxidation-resistant conductive material; forming a ferroelectric layer on the first storage electrode; and forming a second storage electrode on the ferroelectric layer opposite the first storage electrode.
Claim 3
Dependent Claim
24 words
A method of fabricating a ferroelectric capacitor according to claim 1, wherein the nitride layer acts as a stop layer for said removing step.
Claim 4
Dependent Claim
64 words
A method of fabricating a ferroelectric capacitor according to claim 1, wherein said removing step is preceded by the step of forming an insulating mask on the layer of oxidation-resistant conductive material in the contact hole and wherein said removing step comprises removing the insulating layer and the insulating mask to define a first storage electrode by exposing the layer of oxidation-resistant conductive material.
Claim 5
Dependent Claim
29 words
A method of fabricating a ferroelectric capacitor according to claim 3, wherein the insulating layer comprises an oxide layer and wherein the insulating mask is formed of an oxide.
Claim 6
Dependent Claim
28 words
A method of fabricating a ferroelectric capacitor according to claim 3, wherein said removing step comprises simultaneously removing the insulating layer and the insulating mask by wet etching.
Claim 7
Dependent Claim
51 words
A method of fabricating a ferroelectric capacitor according to claim 1, wherein the insulating layer is formed of a material selected from the group consisting of borophosphorous silicate glass, undoped silicate glass, silicon oxide formed by PECVD using SiH 4 , PE-TEOS, spin on glass, high temperature oxide and flowable oxide.
Claim 8
Dependent Claim
32 words
A method of fabricating a ferroelectric capacitor according to claim 1, wherein the ferroelectric layer is formed of a material selected from the group consisting of PbZrTiO 3 and BaSrTiO 3 .
Claim 9
Dependent Claim
23 words
A method of fabricating a ferroelectric capacitor according to claim 7, wherein the ferroelectric layer is formed by metal organic chemical vapor deposition.
Claim 10
Dependent Claim
88 words
A method of fabricating a ferroelectric capacitor according to claim 1, wherein said step of forming a layer of oxidation-resistant conductive material is preceded by the step of: forming a barrier metal layer in the contact hole to prevent diffusion into a layer of oxidation-resistant conductive material; and wherein said step of forming a layer of oxidation-resistant conductive material comprises the step of forming a layer of oxidation-resistant conductive material on the barrier metal layer in the contact hole opposite the integrated circuit substrate and the insulating layer.
Claim 11
Dependent Claim
18 words
A method of fabricating a ferroelectric capacitor according to claim 9, wherein the barrier metal is titanium nitride.
Claim 12
Dependent Claim
34 words
A method of fabricating a ferroelectric capacitor according to claim 1, wherein the contact hole is formed so as to contact a conductive plug formed through an insulating layer on the integrated circuit substrate.
Claim 13
Dependent Claim
20 words
A method of fabricating a ferroelectric capacitor according to claim 1, wherein said oxidation-resistant conductive material comprises oxidation-resistant noble metal.
Claim 14
Dependent Claim
18 words
A method of fabricating a ferroelectric capacitor according to claim 1, wherein the oxidation-resistant conductive material comprises platinum.
Claim 15
Independent Claim
147 words
A method of fabricating a ferroelectric capacitor, the method comprising the steps of: forming a nitride layer on an integrated circuit substrate; forming an insulating layer on the nitride layer opposite the integrated circuit substrate, the insulating layer including a contact hole through the insulating layer and the nitride layer which exposes a region of the integrated circuit substrate and which defines a storage node pattern; forming a layer of oxidation-resistant conductive material in the contact hole and on the insulating layer opposite the integrated circuit substrate; removing the layer of oxidation-resistant conductive material from the insulating layer opposite the integrated circuit substrate, while allowing the layer of oxidation-resistant conductive material to remain in the contact hole to define a first storage electrode; forming a ferroelectric layer on the first storage electrode; and forming a second storage electrode on the ferroelectric layer opposite the first storage electrode.
Claim 16
Independent Claim
147 words
A method of fabricating a ferroelectric capacitor, the method comprising the steps of: forming a nitride layer on an integrated circuit substrate; forming an insulating layer on the nitride layer opposite the integrated circuit substrate, the insulating layer including a contact hole through the insulating layer and the nitride layer which exposes a region of the integrated circuit substrate and which defines a storage node pattern; forming a layer of oxidation-resistant conductive material in the contact hole and on the insulating layer opposite the integrated circuit substrate; removing the layer of oxidation-resistant conductive material from the insulating layer opposite the integrated circuit substrate, while allowing the layer of oxidation-resistant conductive material to remain in the contact hole to define a first storage electrode; forming a ferroelectric layer on the first storage electrode; and forming a second storage electrode on the ferroelectric layer opposite the first storage electrode.
Claim 17
Dependent Claim
32 words
A method of fabricating a ferroelectric capacitor according to claim 14, wherein the ferroelectric layer is formed of a material selected from the group consisting of PbZrTiO 3 and BaSrTiO 3 .
Claim 18
Dependent Claim
88 words
A method of fabricating a ferroelectric capacitor according to claim 14, wherein said step of forming a layer of oxidation-resistant conductive material is preceded by the step of: forming a barrier metal layer in the contact hole to prevent diffusion into a layer of oxidation-resistant conductive material; and wherein said step of forming a layer of oxidation-resistant conductive material comprises the step of forming a layer of oxidation-resistant conductive material on the barrier metal layer in the contact hole opposite the integrated circuit substrate and the insulating layer.
Claim 19
Dependent Claim
20 words
A method of fabricating a ferroelectric capacitor according to claim 14, wherein said oxidation-resistant conductive material comprises oxidation-resistant noble metal.
Claim 20
Dependent Claim
18 words
A method of fabricating a ferroelectric capacitor according to claim 14, wherein the oxidation-resistant conductive material comprises platinum.
Claim 21
Independent Claim
117 words
A method of fabricating a ferroelectric capacitor, the method comprising the steps of: forming an insulating layer on an integrated circuit substrate, the insulating layer including a contact hole which exposes a region of the integrated circuit substrate and which defines a storage node pattern; forming a layer of oxidation-resistant conductive material in the contact hole; forming an insulating mask on the layer of oxidation-resistant conductive material in the contact hole; removing the insulating layer and the insulating mask to define a first storage electrode by exposing the layer of oxidation-resistant conductive material; forming a ferroelectric layer on the first storage electrode; and forming a second storage electrode on the ferroelectric layer opposite the first storage electrode.
Claim 22
Independent Claim
117 words
A method of fabricating a ferroelectric capacitor, the method comprising the steps of: forming an insulating layer on an integrated circuit substrate, the insulating layer including a contact hole which exposes a region of the integrated circuit substrate and which defines a storage node pattern; forming a layer of oxidation-resistant conductive material in the contact hole; forming an insulating mask on the layer of oxidation-resistant conductive material in the contact hole; removing the insulating layer and the insulating mask to define a first storage electrode by exposing the layer of oxidation-resistant conductive material; forming a ferroelectric layer on the first storage electrode; and forming a second storage electrode on the ferroelectric layer opposite the first storage electrode.
Claim 23
Dependent Claim
29 words
A method of fabricating a ferroelectric capacitor according to claim 19, wherein the insulating layer comprises an oxide layer and wherein the insulating mask is formed of an oxide.
Claim 24
Dependent Claim
28 words
A method of fabricating a ferroelectric capacitor according to claim 19, wherein said removing step comprises simultaneously removing the insulating layer and the insulating mask by wet etching.
Claim 25
Dependent Claim
56 words
A method of fabricating a ferroelectric capacitor according to claim 19, wherein the insulating layer is formed of a material selected from the group consisting of borophosphorous silicate glass, undoped silicate glass, silicon oxide formed by plasma enhanced chemical vapor deposition (PECVD) using SiH 4 , PE-TEOS, spin on glass, high temperature oxide and flowable oxide.
Claim 26
Dependent Claim
32 words
A method of fabricating a ferroelectric capacitor according to claim 19, wherein the ferroelectric layer is formed of a material selected from the group consisting of PbZrTiO 3 and BaSrTiO 3 .
Claim 27
Dependent Claim
23 words
A method of fabricating a ferroelectric capacitor according to claim 23 wherein the ferroelectric layer is formed by metal organic chemical vapor deposition.
Claim 28
Dependent Claim
88 words
A method of fabricating a ferroelectric capacitor according to claim 19, wherein said step of forming a layer of oxidation-resistant conductive material is preceded by the step of: forming a barrier metal layer in the contact hole to prevent diffusion into a layer of oxidation-resistant conductive material; and wherein said step of forming a layer of oxidation-resistant conductive material comprises the step of forming a layer of oxidation-resistant conductive material on the barrier metal layer in the contact hole opposite the integrated circuit substrate and the insulating layer.
Claim 29
Dependent Claim
18 words
A method of fabricating a ferroelectric capacitor according to claim 25, wherein the barrier metal is titanium nitride.
Claim 30
Dependent Claim
34 words
A method of fabricating a ferroelectric capacitor according to claim 19, wherein the contact hole is formed so as to contact a conductive plug formed through an insulating layer on the integrated circuit substrate.
Claim 31
Dependent Claim
20 words
A method of fabricating a ferroelectric capacitor according to claim 19, wherein said oxidation-resistant conductive material comprises oxidation-resistant noble metal.
Claim 32
Dependent Claim
18 words
A method of fabricating a ferroelectric capacitor according to claim 19, wherein the oxidation-resistant conductive material comprises platinum.
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