Patent US5837569A successfully refreshed from Google Patents.
US5837569A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device and method for producing the same
Assignee: Sharp Corp
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Filing: 1996-12-30
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Granted: 1998-11-17
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Expires: 2016-12-30
Abstract
Abstract According to the present invention, a method for producing a semiconductor device in which an active region made of a crystalline silicon film is formed on an insulating surface of a substrate is provided. The method includes the steps of: forming a first amorphous silicon film on the substrate; selectively introducing at least one kind of catalyst elements for promoting the crystallization of the first amorphous silicon film into a part of the first amorphous silicon film before or after forming the first amorphous silicon film; heating the first amorphous silicon film so as to crystallize the first amorphous silicon film in a direction substantially parallel to a surface of the substrate with respect to a region surrounding a region into which the catalyst elements are selectively introduced; forming an insulating thin film in a region on the crystalline silicon film in which crystals are grown in a direction substantially parallel to the surface of the substrate so as to partially remove the insulating thin film and the crystalline silicon film so that a linear boundary is formed along a crystal-growing direction of the crystalline silicon film; forming a second amorphous silicon film on the crystalline silicon film; and crystallizing the second amorphous silicon film by heating or by irradiating a laser beam or an intense light.
Inventors
- 👤 Naoki Makita
- 👤 Yoshitaka Yamamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:15
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10P; H10P14/00; H10P14/20; H10P14/38; H10P14/3802; H10P14/3808; H10P14/3816; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6744; H10D86/00; H10D86/01; H10D86/021; H10D86/0221; H10D86/0223; H10D86/0225; H10P14/29; H10P14/2901; H10P14/2922; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3806; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/1333; G02F1/1345; G02F1/13454; H10D30/6729; H10D30/6737; H10D30/6739
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
200 words
A method for producing a semiconductor device comprising an active region made of a crystalline silicon film on an insulating surface of a substrate, comprising the steps of: forming a first amorphous silicon film over the substrate; introducing at least one kind of catalyst elements for promoting the crystallization into a selected portion of the first amorphous silicon film; first annealing the first amorphous silicon film so as to crystallize the selected portion of the first amorphous silicon film, and then to form a laterally grown crystalline portion of the first amorphous silicon film which extends from the selected portion of the first amorphous silicon film in a direction substantially parallel to the insulating surface of the substrate; forming an insulating thin film over the laterally grown crystalline portion of the first amorphous silicon film; partially removing the insulating thin film and the laterally grown crystalline portion of the first amorphous silicon film so that a linear boundary is formed along the crystal-growing direction; forming a second amorphous silicon film over the substrate; and second annealing the second amorphous silicon film so as to crystalize the second amorphous silicon film using the linear boundary as a seed for crystal growth.
Claim 2
Independent Claim
200 words
A method for producing a semiconductor device comprising an active region made of a crystalline silicon film on an insulating surface of a substrate, comprising the steps of: forming a first amorphous silicon film over the substrate; introducing at least one kind of catalyst elements for promoting the crystallization into a selected portion of the first amorphous silicon film; first annealing the first amorphous silicon film so as to crystallize the selected portion of the first amorphous silicon film, and then to form a laterally grown crystalline portion of the first amorphous silicon film which extends from the selected portion of the first amorphous silicon film in a direction substantially parallel to the insulating surface of the substrate; forming an insulating thin film over the laterally grown crystalline portion of the first amorphous silicon film; partially removing the insulating thin film and the laterally grown crystalline portion of the first amorphous silicon film so that a linear boundary is formed along the crystal-growing direction; forming a second amorphous silicon film over the substrate; and second annealing the second amorphous silicon film so as to crystalize the second amorphous silicon film using the linear boundary as a seed for crystal growth.
Claim 3
Independent Claim
182 words
A method for producing a semiconductor device comprising an active region made of a crystalline silicon film on an insulating surface of a substrate, comprising the steps of: forming a first amorphous silicon film over the substrate; introducing at least one kind of catalyst elements for promoting the crystallization into a selected portion of the first amorphous silicon film; first annealing the first amorphous silicon film so as to crystallize the selected portion of the first amorphous silicon film, and then to form a laterally grown crystalline portion of the first amorphous silicon film which extends from the selected portion of the first amorphous silicon film in a direction substantially parallel to the insulating surface of the substrate; patterning the laterally grown crystalline portion of the first amorphous silicon, so as to form a island-shape silicon region which extends along the crystal-growing direction; forming a second amorphous silicon film over the island-shape silicon region; and second annealing the second amorphous silicon film so as to crystalize the second amorphous silicon film using the island-shape silicon region as a seed for crystal growth.
Claim 4
Independent Claim
182 words
A method for producing a semiconductor device comprising an active region made of a crystalline silicon film on an insulating surface of a substrate, comprising the steps of: forming a first amorphous silicon film over the substrate; introducing at least one kind of catalyst elements for promoting the crystallization into a selected portion of the first amorphous silicon film; first annealing the first amorphous silicon film so as to crystallize the selected portion of the first amorphous silicon film, and then to form a laterally grown crystalline portion of the first amorphous silicon film which extends from the selected portion of the first amorphous silicon film in a direction substantially parallel to the insulating surface of the substrate; patterning the laterally grown crystalline portion of the first amorphous silicon, so as to form a island-shape silicon region which extends along the crystal-growing direction; forming a second amorphous silicon film over the island-shape silicon region; and second annealing the second amorphous silicon film so as to crystalize the second amorphous silicon film using the island-shape silicon region as a seed for crystal growth.
Claim 5
Independent Claim
228 words
A method for producing a semiconductor device comprising an active region made of a crystalline silicon film on an insulating surface of a substrate, comprising the steps of: forming a first amorphous silicon film over the substrate; introducing at least one kind of catalyst elements for promoting the crystallization into a selected portion of the first amorphous silicon film; first annealing the first amorphous silicon film so as to crystallize the selected portion of the first amorphous silicon film, and then to form a laterally grown crystalline portion of the first amorphous silicon film which extends from the selected portion of the first amorphous silicon film in a direction substantially parallel to the insulating surface of the substrate; forming an insulating thin film over the laterally grown crystalline portion of the first amorphous silicon film; forming an opening in the insulating thin film so as to expose a selected area of a top surface of the laterally grown crystalline portion of the first amorphous silicon film, the opening extending linearly along the crystal-growing direction; forming a second amorphous silicon film over the insulating thin film, and second annealing the second amorphous silicon film so as to crystalize the second amorphous silicon film using the selected area of the top surface of the laterally grown crystalline portion of the first amorphous silicon film as a seed for crystal growth.
Claim 6
Independent Claim
228 words
A method for producing a semiconductor device comprising an active region made of a crystalline silicon film on an insulating surface of a substrate, comprising the steps of: forming a first amorphous silicon film over the substrate; introducing at least one kind of catalyst elements for promoting the crystallization into a selected portion of the first amorphous silicon film; first annealing the first amorphous silicon film so as to crystallize the selected portion of the first amorphous silicon film, and then to form a laterally grown crystalline portion of the first amorphous silicon film which extends from the selected portion of the first amorphous silicon film in a direction substantially parallel to the insulating surface of the substrate; forming an insulating thin film over the laterally grown crystalline portion of the first amorphous silicon film; forming an opening in the insulating thin film so as to expose a selected area of a top surface of the laterally grown crystalline portion of the first amorphous silicon film, the opening extending linearly along the crystal-growing direction; forming a second amorphous silicon film over the insulating thin film, and second annealing the second amorphous silicon film so as to crystalize the second amorphous silicon film using the selected area of the top surface of the laterally grown crystalline portion of the first amorphous silicon film as a seed for crystal growth.
Claim 7
Independent Claim
164 words
A method for producing a semiconductor device comprising an active region made of a crystalline silicon film on an insulating surface of a substrate, comprising the steps of: forming a first amorphous silicon film over the substrate; patterning the first amorphous silicon film to form an island-shape silicon region; introducing at least one kind of catalyst elements for promoting the crystallization into a selected portion of the island-shape silicon region; first annealing the island-shape silicon region so as to crystalize the selected portion of the island-shape silicon region, and then to form a laterally grown crystalline portion of the island-shape silicon region which extends from the selected portion of the island-shape silicon region in a direction substantially parallel to the insulating surface of the substrate; forming a second amorphous silicon film on the island-shape silicon region; and second annealing the second amorphous silicon film so as to crystalize the second amorphous silicon film using the island-shape silicon region as a seed for crystal growth.
Claim 8
Independent Claim
164 words
A method for producing a semiconductor device comprising an active region made of a crystalline silicon film on an insulating surface of a substrate, comprising the steps of: forming a first amorphous silicon film over the substrate; patterning the first amorphous silicon film to form an island-shape silicon region; introducing at least one kind of catalyst elements for promoting the crystallization into a selected portion of the island-shape silicon region; first annealing the island-shape silicon region so as to crystalize the selected portion of the island-shape silicon region, and then to form a laterally grown crystalline portion of the island-shape silicon region which extends from the selected portion of the island-shape silicon region in a direction substantially parallel to the insulating surface of the substrate; forming a second amorphous silicon film on the island-shape silicon region; and second annealing the second amorphous silicon film so as to crystalize the second amorphous silicon film using the island-shape silicon region as a seed for crystal growth.
Claim 9
Dependent Claim
29 words
A method for producing a semiconductor device according to claim 1, 2, 3 or 4, wherein a thickness of the first amorphous silicon film is 100 nm or less.
Claim 10
Dependent Claim
24 words
A method for producing a semiconductor device according to claim 2, wherein a width of the island-shape silicon region is 200 nm or less.
Claim 11
Dependent Claim
39 words
A method for producing a semiconductor device according to claim 3, wherein a width of the selected area of the top surface of the laterally grown crystalline portion of the first amorphous silicon film is 200 nm or less.
Claim 12
Dependent Claim
24 words
A method for producing a semiconductor device according to claim 4, wherein a width of the island-shape silicon region is 200 nm or less.
Claim 13
Dependent Claim
40 words
A method for producing a semiconductor device according to claim 1, 2, 3 or 4, wherein the catalyst elements are selected from the group consisting of Ni, Co, Pd, Pt, Cu, Ag, Au, In, Sn, Al, P, As, and Sb.
Claim 14
Independent Claim
143 words
A method for producing a semiconductor device comprising the steps of: forming a first amorphous silicon film over an insulating surface of a substrate; introducing at least one catalyst element for promoting the crystallization into a selected portion of the first amorphous silicon film; first annealing the first amorphous silicon film so as to crystallize the selected portion of the first amorphous silicon film, and then to form a laterally grown crystalline portion of the first amorphous silicon film; forming a second amorphous silicon film so as to contact with a selected area of the laterally grown crystalline portion of the first amorphous silicon film; second annealing the second amorphous silicon film so as to crystallize the second amorphous silicon film using the selected area of the laterally grown crystalline portion of the first amorphous silicon film as a seed for crystal growth.
Claim 15
Independent Claim
143 words
A method for producing a semiconductor device comprising the steps of: forming a first amorphous silicon film over an insulating surface of a substrate; introducing at least one catalyst element for promoting the crystallization into a selected portion of the first amorphous silicon film; first annealing the first amorphous silicon film so as to crystallize the selected portion of the first amorphous silicon film, and then to form a laterally grown crystalline portion of the first amorphous silicon film; forming a second amorphous silicon film so as to contact with a selected area of the laterally grown crystalline portion of the first amorphous silicon film; second annealing the second amorphous silicon film so as to crystallize the second amorphous silicon film using the selected area of the laterally grown crystalline portion of the first amorphous silicon film as a seed for crystal growth.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-11-16 | 2002-05-18 | 2002-11-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-11-16 | 2006-05-18 | 2006-11-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-11-16 | 2010-05-18 | 2010-11-17 | $7700.00 | Window Closed / Lapsed |