Patent US5818070A successfully refreshed from Google Patents.
US5818070A
Expired / Lapsed
US
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Electro-optical device incorporating a peripheral dual gate electrode TFT driver circuit
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1997-03-04
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Granted: 1998-10-06
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Expires: 2017-03-04
Abstract
Abstract A thin file transistor (TPT) has first (lower) and second (upper) gate electrodes which are provide respectively above and under a semiconductor active layer and first and second insulating films (which serve as gate insulating films) provided respectively between the first gate electrode and a semiconductor layer and between a second gate electrode and the semiconductor layer. The second gate electrode has an anodic oxide film made of a material constituting the gate electrode on the upper and side surfaces thereof formed by anodization. Also, a silicide region is provided by covering the source/drain regions of the TFT with a silicide and changing a part of the region into a silicide.
Inventors
- 👤 Shunpei Yamazaki
- 👤 Yasuhiko Takemura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 12:17
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0321; H10D30/60; H10D30/67; H10D30/6729; H10D30/673; H10D30/6733; H10D30/6734; H10D30/6737; H10D30/6739; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6704; H10D30/6713; H10D30/6715
Claims Analysis
Total Claims: 31
Claim 1
Independent Claim
120 words
An electro-optical device comprising: a substrate having an insulating surface; an active matrix circuit and a peripheral driver circuit formed over said substrate, where said peripheral driver circuit is constituted by thin film transistors and where each of said thin film transistors comprises: a first gate electrode over said substrate; a first gate insulating layer on said first gate electrode; a semiconductor layer including source, drain, and channel regions on said first gate insulating layer; a second gate insulating layer on said semiconductor layer; and a second gate electrode on said second gate insulating layer, wherein said first gate electrode is electrically connected to said second gate electrode through a contact hole of said first and second gate insulating layers.
Claim 2
Dependent Claim
120 words
An electro-optical device comprising: a substrate having an insulating surface; an active matrix circuit and a peripheral driver circuit formed over said substrate, where said peripheral driver circuit is constituted by thin film transistors and where each of said thin film transistors comprises: a first gate electrode over said substrate; a first gate insulating layer on said first gate electrode; a semiconductor layer including source, drain, and channel regions on said first gate insulating layer; a second gate insulating layer on said semiconductor layer; and a second gate electrode on said second gate insulating layer, wherein said first gate electrode is electrically connected to said second gate electrode through a contact hole of said first and second gate insulating layers.
Claim 3
Dependent Claim
30 words
A device according to claim 1 wherein at least one of said first and second gate electrodes serves as a shading layer to prevent light from entering said channel region.
Claim 4
Dependent Claim
30 words
A device according to claim 1 wherein said thin film transistors comprise a P-channel type and an N-channel type, which constitute a complementary MOS circuit in said peripheral driver circuit.
Claim 5
Dependent Claim
14 words
A device according to claim 1 wherein said electro-optical device comprises a image sensor.
Claim 6
Dependent Claim
24 words
A device according to claim 1 wherein said peripheral driver circuit comprises a data driver circuit, a scan driver circuit, and auxiliary driver circuits.
Claim 7
Dependent Claim
16 words
A device according to claim 1 wherein said semiconductor layer in said channel region is intrinsic.
Claim 8
Dependent Claim
114 words
An electro-optical device comprising: a substrate having an insulating surface; an active matrix circuit and a peripheral driver circuit formed over said substrate, where said peripheral driver circuit is constituted by thin film transistors and where each of said thin film transistors comprises: a first gate electrode over said substrate; a first gate insulating layer on said first gate electrode; a semiconductor layer including source, drain, and channel regions on said first gate insulating layer; a second gate insulating layer on said semiconductor layer; and a second gate electrode on said second gate insulating layer, wherein said first gate electrode comprises a heat resistant material and said second gate electrode comprises an anodizable material.
Claim 9
Dependent Claim
114 words
An electro-optical device comprising: a substrate having an insulating surface; an active matrix circuit and a peripheral driver circuit formed over said substrate, where said peripheral driver circuit is constituted by thin film transistors and where each of said thin film transistors comprises: a first gate electrode over said substrate; a first gate insulating layer on said first gate electrode; a semiconductor layer including source, drain, and channel regions on said first gate insulating layer; a second gate insulating layer on said semiconductor layer; and a second gate electrode on said second gate insulating layer, wherein said first gate electrode comprises a heat resistant material and said second gate electrode comprises an anodizable material.
Claim 10
Dependent Claim
26 words
A device according to claim 7 wherein said first gate electrode comprises a material selected from the group consisting of doped semiconductor, W, Mo, and Ti.
Claim 11
Dependent Claim
24 words
A device according to claim 7 wherein said second gate electrode comprises a material selected from the group consisting of Al, Ti, and Ta.
Claim 12
Dependent Claim
26 words
A device according to claim 7 wherein said first and second gate electrodes serve as a shading layer to prevent light from entering said channel region.
Claim 13
Dependent Claim
14 words
A device according to claim 7 wherein said electro-optical device comprises a image sensor.
Claim 14
Dependent Claim
127 words
An electro-optical device comprising: a substrate having an insulating surface; an active matrix circuit and a peripheral driver circuit formed over said substrate, where said peripheral driver circuit is constituted by thin film transistors and where each of said thin film transistors comprises: a first gate electrode over said substrate; a first gate insulating layer on said first gate electrode; a semiconductor layer including source, drain, and channel regions on said first gate insulating layer; a second gate insulating layer on said semiconductor layer; and a second gate electrode on said second gate insulating layer, wherein said first gate electrode extends beyond side edges of said channel region and said second gate electrode is provided with an anodic oxide layer of material of said second gate electrode.
Claim 15
Dependent Claim
127 words
An electro-optical device comprising: a substrate having an insulating surface; an active matrix circuit and a peripheral driver circuit formed over said substrate, where said peripheral driver circuit is constituted by thin film transistors and where each of said thin film transistors comprises: a first gate electrode over said substrate; a first gate insulating layer on said first gate electrode; a semiconductor layer including source, drain, and channel regions on said first gate insulating layer; a second gate insulating layer on said semiconductor layer; and a second gate electrode on said second gate insulating layer, wherein said first gate electrode extends beyond side edges of said channel region and said second gate electrode is provided with an anodic oxide layer of material of said second gate electrode.
Claim 16
Dependent Claim
26 words
A device according to claim 12 wherein said first gate electrode comprises a material selected from the group consisting of doped semiconductor, W, Mo, and Ti.
Claim 17
Dependent Claim
24 words
A device according to claim 12 wherein said second gate electrode comprises a material selected from the group consisting of Al, Ti, and Ta.
Claim 18
Dependent Claim
30 words
A device according to claim 12 wherein at least one of said first and second gate electrodes serves as a shading layer to prevent light from entering said channel region.
Claim 19
Dependent Claim
14 words
A device according to claim 12 wherein said electro-optical device comprises a image sensor.
Claim 20
Dependent Claim
142 words
An electro-optical device comprising: a substrate having an insulating surface; an active matrix circuit and a peripheral driver circuit formed over said substrate, where said peripheral driver circuit is constituted by thin film transistors and where each of said thin film transistors comprises: a first gate electrode over said substrate; a first gate insulating layer on said first gate electrode; a semiconductor layer including source, drain, and channel regions on said first gate insulating layer; a second gate insulating layer on said semiconductor layer; and a second gate electrode on said second gate insulating layer, said second gate electrode electrically connected to said first gate electrode through a contact hole of said first and second gate insulating layers, wherein at least one of said first and second gate electrodes serves as a shading layer to prevent light from entering said channel region.
Claim 21
Dependent Claim
142 words
An electro-optical device comprising: a substrate having an insulating surface; an active matrix circuit and a peripheral driver circuit formed over said substrate, where said peripheral driver circuit is constituted by thin film transistors and where each of said thin film transistors comprises: a first gate electrode over said substrate; a first gate insulating layer on said first gate electrode; a semiconductor layer including source, drain, and channel regions on said first gate insulating layer; a second gate insulating layer on said semiconductor layer; and a second gate electrode on said second gate insulating layer, said second gate electrode electrically connected to said first gate electrode through a contact hole of said first and second gate insulating layers, wherein at least one of said first and second gate electrodes serves as a shading layer to prevent light from entering said channel region.
Claim 22
Dependent Claim
14 words
A device according to claim 17 wherein said electro-optical device comprises a image sensor.
Claim 23
Dependent Claim
24 words
A device according to claim 17 wherein said peripheral driver circuit comprises a data driver circuit, a scan driver circuit, and auxiliary driver circuits.
Claim 24
Dependent Claim
116 words
An electro-optical device comprising: a substrate having an insulating surface; an active matrix circuit and a peripheral driver circuit formed over said substrate, where said peripheral driver circuit is constituted by thin film transistors and where each of said thin film transistors comprises: a first gate electrode over said substrate; a first gate insulating layer on said first gate electrode; a semiconductor layer including source, drain, and channel regions on said first gate insulating layer; a second gate insulating layer on said semiconductor layer; and a second gate electrode on said second gate insulating layer, wherein said second gate electrode comprises an anodizable material and is coated with an anodic oxide film of said anodizable material.
Claim 25
Dependent Claim
116 words
An electro-optical device comprising: a substrate having an insulating surface; an active matrix circuit and a peripheral driver circuit formed over said substrate, where said peripheral driver circuit is constituted by thin film transistors and where each of said thin film transistors comprises: a first gate electrode over said substrate; a first gate insulating layer on said first gate electrode; a semiconductor layer including source, drain, and channel regions on said first gate insulating layer; a second gate insulating layer on said semiconductor layer; and a second gate electrode on said second gate insulating layer, wherein said second gate electrode comprises an anodizable material and is coated with an anodic oxide film of said anodizable material.
Claim 26
Dependent Claim
30 words
A device according to claim 20 wherein at least one of said first and second gate electrodes serves as a shading layer to prevent light from entering said channel region.
Claim 27
Dependent Claim
14 words
A device according to claim 20 wherein said electro-optical device comprises a image sensor.
Claim 28
Dependent Claim
128 words
An electro-optical device comprising: a substrate having an insulating surface; an active matrix circuit and a peripheral driver circuit formed over said substrate, where said peripheral driver circuit is constituted by thin film transistors and where each of said thin film transistors comprises: a first gate electrode over said substrate; a first gate insulating layer on said first gate electrode; a semiconductor layer including source, drain, and channel regions on said first gate insulating layer; a second gate insulating layer on said semiconductor layer; and a second gate electrode on said second gate insulating layer, wherein said source and said drain regions are provided with a metal silicide, and wherein said first gate electrode comprises a heat resistant material and said second gate electrode comprises an anodizable material.
Claim 29
Dependent Claim
128 words
An electro-optical device comprising: a substrate having an insulating surface; an active matrix circuit and a peripheral driver circuit formed over said substrate, where said peripheral driver circuit is constituted by thin film transistors and where each of said thin film transistors comprises: a first gate electrode over said substrate; a first gate insulating layer on said first gate electrode; a semiconductor layer including source, drain, and channel regions on said first gate insulating layer; a second gate insulating layer on said semiconductor layer; and a second gate electrode on said second gate insulating layer, wherein said source and said drain regions are provided with a metal silicide, and wherein said first gate electrode comprises a heat resistant material and said second gate electrode comprises an anodizable material.
Claim 30
Dependent Claim
26 words
A device according to claim 23 wherein said first and second gate electrodes serve as a shading layer to prevent light from entering said channel region.
Claim 31
Dependent Claim
14 words
A device according to claim 23 wherein said electro-optical device comprises a image sensor.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-10-05 | 2002-04-06 | 2002-10-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-10-05 | 2006-04-06 | 2006-10-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-10-05 | 2010-04-06 | 2010-10-06 | $7700.00 | Window Closed / Lapsed |