US5789317A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Low temperature reflow method for filling high aspect ratio contacts
Assignee: Micron Technology Inc
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Filing: 1996-04-12
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Granted: 1998-08-04
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Expires: 2016-04-12
Abstract
Abstract Impurities are added to a conductor layer in a semiconductor process to prevent formation of void spaces and encourage complete filling of contacts. The impurities reduce the melting point and surface tension of a conductor layer, thereby improving filling characteristics during a reflow step. The impurities may be added at any time during the process, including during conductor deposition and/or reflow.
Inventors
- 👤 Shubneesh Batra
- 👤 Gurtej Sandhu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 20:23
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4405; H10W20/01; H10W20/031; H10W20/056; H10W20/059
Claims Analysis
Total Claims: 31
Claim 1
Independent Claim
87 words
A method of forming a contact, said method comprising the steps of: (a) providing a substrate having a contact hole formed therein; (b) depositing conductive material into said contact hole at a temperature that causes said conductive material to reflow, said conductive material having a surface tension and a melting point; and (c) depositing an impurity into said conductive material while said conductive material is being deposited, said impurity causing at least one of said surface tension and said melting point of said conductive material to lower.
Claim 2
Independent Claim
87 words
A method of forming a contact, said method comprising the steps of: (a) providing a substrate having a contact hole formed therein; (b) depositing conductive material into said contact hole at a temperature that causes said conductive material to reflow, said conductive material having a surface tension and a melting point; and (c) depositing an impurity into said conductive material while said conductive material is being deposited, said impurity causing at least one of said surface tension and said melting point of said conductive material to lower.
Claim 3
Dependent Claim
30 words
The method, as set forth in claim 1, wherein said conductive material comprises at least one of aluminum, aluminum alloy, tungsten, tungsten alloy, titanium, titanium alloy, copper, and copper alloy.
Claim 4
Dependent Claim
55 words
The method, as set forth in claim 1, wherein said impurity is derived from an impurity source comprising at least one of silane, disilane, germane, GeF 4 , SiF 4 , Cl 2 F 2 , ClF 3 , ICl 3 , ICl 5 , TiCl 4 , WF 6 , and TaCl 5 .
Claim 5
Dependent Claim
18 words
The method, as set forth in claim 1, wherein step (c) comprises the step of depositing migrating impurities.
Claim 6
Dependent Claim
18 words
The method, as set forth in claim 1, wherein step (c) comprises the step of depositing non-migrating impurities.
Claim 7
Dependent Claim
27 words
The method, as set forth in claim 1, wherein step (c) comprises the step of lowering said melting point of said conductive material by 10% to 60%.
Claim 8
Dependent Claim
22 words
The method, as set forth in claim 1, wherein step (c) comprises the step of depositing said impurity continuously during step (b).
Claim 9
Dependent Claim
22 words
The method, as set forth in claim 1, wherein step (c) comprises the step of depositing said impurity intermittently during step (b).
Claim 10
Dependent Claim
36 words
The method, as set forth in claim 1, wherein said conductive material comprises aluminum, wherein said impurity is derived from TiCl4, and wherein said impurity is deposited after 70% of said conductive material has been deposited.
Claim 11
Independent Claim
69 words
A method of forming a contact, said method comprising the following steps performed in order: (a) providing a substrate having a contact hole formed therein; (b) depositing conductive material into said contact hole, said conductive material having a melting point; (c) depositing an impurity into said contact hole, said impurity causing said melting point of said conductive material to lower; and (d) reflowing said conductive material and said impurity.
Claim 12
Independent Claim
69 words
A method of forming a contact, said method comprising the following steps performed in order: (a) providing a substrate having a contact hole formed therein; (b) depositing conductive material into said contact hole, said conductive material having a melting point; (c) depositing an impurity into said contact hole, said impurity causing said melting point of said conductive material to lower; and (d) reflowing said conductive material and said impurity.
Claim 13
Dependent Claim
30 words
The method, as set forth in claim 10, wherein said conductive material comprises at least one of aluminum, aluminum alloy, tungsten, tungsten alloy, titanium, titanium alloy, copper, and copper alloy.
Claim 14
Dependent Claim
55 words
The method, as set forth in claim 10, wherein said impurity is derived from an impurity source comprising at least one of silane, disilane, germane, GeF 4 , SiF 4 , Cl 2 F 2 , ClF 3 , ICl 3 , ICl 5 , TiCl 4 , WF 6 , and TaCl 5 .
Claim 15
Dependent Claim
18 words
The method, as set forth in claim 10, wherein step (c) comprises the step of depositing migrating impurities.
Claim 16
Dependent Claim
18 words
The method, as set forth in claim 10, wherein step (c) comprises the step of depositing non-migrating impurities.
Claim 17
Dependent Claim
27 words
The method, as set forth in claim 10, wherein step (c) comprises the step of lowering said melting point of said conductive material by 10% to 60%.
Claim 18
Dependent Claim
22 words
The method, as set forth in claim 10, wherein step (c) comprises the step of depositing said impurity continuously during step (b).
Claim 19
Dependent Claim
22 words
The method, as set forth in claim 10, wherein step (c) comprises the step of depositing said impurity intermittently during step (b).
Claim 20
Dependent Claim
36 words
The method, as set forth in claim 10, wherein said conductive material comprises aluminum, wherein said impurity is derived from TiCl4, and wherein said impurity is deposited after 70% of said conductive material has been deposited.
Claim 21
Dependent Claim
17 words
The method, as set forth in claim 10, wherein steps (b), (c), and (d) are performed simultaneously.
Claim 22
Independent Claim
68 words
A method of forming a contact, said method comprising the steps of: (a) providing a substrate having a contact hole formed therein; (b) depositing conductive material into said contact hole, said conductive material having a melting point; and (c) depositing an impurity onto said conductive material at a temperature that causes said conductive material to reflow, said impurity causing said melting point of said conductive material to lower.
Claim 23
Independent Claim
68 words
A method of forming a contact, said method comprising the steps of: (a) providing a substrate having a contact hole formed therein; (b) depositing conductive material into said contact hole, said conductive material having a melting point; and (c) depositing an impurity onto said conductive material at a temperature that causes said conductive material to reflow, said impurity causing said melting point of said conductive material to lower.
Claim 24
Dependent Claim
30 words
The method, as set forth in claim 20, herein said conductive material comprises at least one of aluminum, aluminum alloy, tungsten, tungsten alloy, titanium, titanium alloy, copper, and copper alloy.
Claim 25
Dependent Claim
55 words
The method, as set forth in claim 20, wherein said impurity is derived from an impurity source comprising at least one of silane, disilane, germane, GeF 4 , SiF 4 , Cl 2 F 2 , ClF 3 , ICl 3 , ICl 5 , TiCl 4 , WF 6 , and TaCl 5 .
Claim 26
Dependent Claim
18 words
The method, as set forth in claim 20, wherein step (c) comprises the step of depositing migrating impurities.
Claim 27
Dependent Claim
18 words
The method, as set forth in claim 20, wherein step (c) comprises the step of depositing non-migrating impurities.
Claim 28
Dependent Claim
27 words
The method, as set forth in claim 20, wherein step (c) comprises the step of lowering said melting point of said conductive material by 10% to 60%.
Claim 29
Dependent Claim
22 words
The method, as set forth in claim 20, wherein step (c) comprises the step of depositing said impurity continuously during step (b).
Claim 30
Dependent Claim
22 words
The method, as set forth in claim 20, wherein step (c) comprises the step of depositing said impurity intermittently during step (b).
Claim 31
Dependent Claim
36 words
The method, as set forth in claim 20, wherein said conductive material comprises aluminum, wherein said impurity is derived from TiCl4, and wherein said impurity is deposited after 70% of said conductive material has been deposited.
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| 3.5 Years (Year 4) | 2001-08-03 | 2002-02-02 | 2002-08-04 | $2000.00 | Window Closed / Lapsed |
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