Patent US5786247A successfully refreshed from Google Patents.
US5786247A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Low voltage CMOS process with individually adjustable LDD spacers
Assignee: NXP BV
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Filing: 1996-12-09
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Granted: 1998-07-28
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Expires: 2016-12-09
Abstract
Abstract The present invention relates to a method and device for providing CMOS logic which can be operated at various operating voltages, without resulting in unbalanced operation of n-channel and p-channel CMOS transistors. In accordance with the present invention, CMOS circuitry can be provided that is operable over a range of voltages (e.g., a range from below 3 volts to a range over 5 volts) without producing unbalanced operation of n-channel and p-channel transistors. Thus, integrated circuits formed in accordance with the present invention can be operated at different voltage power sources without requiring a redesign or relayout of the integrated circuit. In accordance with the present invention, CMOS transistors can be fabricated without increased fabrication complexity to provide transistors which operate within a relatively safe region of their operating characteristics and which operate with a speed that is unaffected by the reduced voltage supply (i.e., no need to accommodate timing errors since both n-channel and p-channel transistor performance remains balanced).
Inventors
- 👤 Kuang-Yeh Chang
- 👤 Ramachandr A. Rao
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 16:12
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/80; H10D84/82; H10D84/83; H10D84/85; H10D84/856; H10D84/8312; H10D84/8316; Y; Y10; Y10S; Y10S257/00; Y10S257/90; Y10S438/00; Y10S438/981
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
358 words
A method for fabricating an integrated circuit having at least one n-channel CMOS transistor and at least one p-channel CMOS transistor, said method comprising the steps of: forming a substrate of a first conductivity-type material; forming a well of a second conductivity-type material in said substrate; forming lightly doped areas of said first conductivity-type material and of said second conductivity-type material in gate regions of said substrate; forming an oxide layer on said substrate, the oxide layer establishing thick field oxide regions for separating the at least one n-channel CMOS transistor from the at least one p-channel CMOS transistor formed on the substrate, and establishing gate oxide regions in said gate regions of the substrate; forming gates in said gate regions; forming a uniform layer of spacer material over said gates and said oxide layer; masking one of said p-channel transistor and said n-channel transistor with a masking material; forming at least one spacer over said lightly doped area adjacent said gate of the other of said p-channel transistor and said n-channel transistor; forming a heavily doped area in said substrate, said heavily doped area being formed in said gate region of said other transistor, and being defined by said at least one spacer; removing said masking material from said one transistor; masking the other of said p-channel transistor and said n-channel transistor with a masking material; etching spacer material of said one transistor using a blanket etch; forming at least one spacer over said lightly doped area adjacent said gate of said one transistor such that said blanket etch and said step of forming said at least one spacer of said one transistor provide spacers which are different in size with respect to the at least one spacer of said other transistor, said at least one spacer having a size selected to balance operation of said one transistor and said other transistor for a reduced power source of the integrated circuit; and forming a heavily doped area in said substrate, said heavily doped area being formed in said gate region of said one transistor and being defined by said at least one spacer of said one transistor.
Claim 2
Independent Claim
358 words
A method for fabricating an integrated circuit having at least one n-channel CMOS transistor and at least one p-channel CMOS transistor, said method comprising the steps of: forming a substrate of a first conductivity-type material; forming a well of a second conductivity-type material in said substrate; forming lightly doped areas of said first conductivity-type material and of said second conductivity-type material in gate regions of said substrate; forming an oxide layer on said substrate, the oxide layer establishing thick field oxide regions for separating the at least one n-channel CMOS transistor from the at least one p-channel CMOS transistor formed on the substrate, and establishing gate oxide regions in said gate regions of the substrate; forming gates in said gate regions; forming a uniform layer of spacer material over said gates and said oxide layer; masking one of said p-channel transistor and said n-channel transistor with a masking material; forming at least one spacer over said lightly doped area adjacent said gate of the other of said p-channel transistor and said n-channel transistor; forming a heavily doped area in said substrate, said heavily doped area being formed in said gate region of said other transistor, and being defined by said at least one spacer; removing said masking material from said one transistor; masking the other of said p-channel transistor and said n-channel transistor with a masking material; etching spacer material of said one transistor using a blanket etch; forming at least one spacer over said lightly doped area adjacent said gate of said one transistor such that said blanket etch and said step of forming said at least one spacer of said one transistor provide spacers which are different in size with respect to the at least one spacer of said other transistor, said at least one spacer having a size selected to balance operation of said one transistor and said other transistor for a reduced power source of the integrated circuit; and forming a heavily doped area in said substrate, said heavily doped area being formed in said gate region of said one transistor and being defined by said at least one spacer of said one transistor.
Claim 3
Dependent Claim
47 words
Method according to claim 1 wherein said first conductivity-type material is a p-type material and said second conductivity material is an n-type material, said step of forming a uniform layer of spacer material further including: depositing a layer of TEOS over said gates and said oxide layer.
Claim 4
Dependent Claim
44 words
Method according to claim 1, wherein said steps of forming a heavily doped area in the gate regions of said one transistor and said other transistor further include: implanting heavily doped source and drain regions in areas of said substrate defined by said spacers.
Claim 5
Dependent Claim
31 words
Method according to claim 1, wherein said steps of forming said at least one spacer adjacent gates of said one transistor and said other transistor further includes: etching the spacer material.
Claim 6
Dependent Claim
175 words
Method for fabricating a CMOS transistor comprising the steps of: forming a first gate in a first region of a substrate and a second gate in a second region of said substrate; forming a lightly doped area of a first conductivity-type material in said first region and a lightly doped area of a second conductivity-type material in said second region; forming a layer of spacer material over said first gate and said second gate of said first and second regions; forming at least one spacer from said spacer material in said first region and, subsequent to forming said at least one spacer, independently forming at least one additional spacer from said spacer material in said second region, said at least one additional spacer having a size selected to balance operation of said first and second regions for a reduced power source of the integrated circuit; and forming a heavily doped area of said first conductivity-type material in said first region and a heavily doped area of said second conductivity type material in said second region.
Claim 7
Dependent Claim
175 words
Method for fabricating a CMOS transistor comprising the steps of: forming a first gate in a first region of a substrate and a second gate in a second region of said substrate; forming a lightly doped area of a first conductivity-type material in said first region and a lightly doped area of a second conductivity-type material in said second region; forming a layer of spacer material over said first gate and said second gate of said first and second regions; forming at least one spacer from said spacer material in said first region and, subsequent to forming said at least one spacer, independently forming at least one additional spacer from said spacer material in said second region, said at least one additional spacer having a size selected to balance operation of said first and second regions for a reduced power source of the integrated circuit; and forming a heavily doped area of said first conductivity-type material in said first region and a heavily doped area of said second conductivity type material in said second region.
Claim 8
Dependent Claim
11 words
Method according to claim 5, wherein said spacer material is TEOS.
Claim 9
Dependent Claim
53 words
Method according to claim 5, wherein said step of independently forming at least one additional spacer further includes the steps of: blanket etching the spacer material in said second region to reduce a thickness of said spacer material; and etching said reduced thickness spacer material to form said at least one additional spacer.
Claim 10
Dependent Claim
83 words
Method according to claim 5, wherein said first region is an n-channel region and said second region is a p-channel region and wherein said step of forming said at least one spacer and said at least one additional spacer further includes the steps of: forming said at least one additional spacer smaller than said at least one spacer; and implanting source and drain regions in said second region which are larger in size than source and drain regions implanted in said first region.
Claim 11
Dependent Claim
165 words
Method for fabricating a CMOS transistor comprising: forming a first gate over a first region of a substrate and a second gate over a second region of said substrate; forming a lightly doped area of a first conductivity-type material in said first region and a lightly doped area of a second conductivity-type material in said second region; forming a layer of spacer material over said first gate and said second gate of said first and second regions; forming at least one spacer from said spacer material over said first region and at least one additional spacer from said spacer material over said second region; implanting a first dose of a first conductive material in said first region; and implanting a second dose of a second type of conductive material in said second region, said second dose being greater than said first dose and being selected to balance operation of said first region and said second region for a reduced power source of the integrated circuit.
Claim 12
Dependent Claim
165 words
Method for fabricating a CMOS transistor comprising: forming a first gate over a first region of a substrate and a second gate over a second region of said substrate; forming a lightly doped area of a first conductivity-type material in said first region and a lightly doped area of a second conductivity-type material in said second region; forming a layer of spacer material over said first gate and said second gate of said first and second regions; forming at least one spacer from said spacer material over said first region and at least one additional spacer from said spacer material over said second region; implanting a first dose of a first conductive material in said first region; and implanting a second dose of a second type of conductive material in said second region, said second dose being greater than said first dose and being selected to balance operation of said first region and said second region for a reduced power source of the integrated circuit.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-07-27 | 2002-01-26 | 2002-07-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-07-27 | 2006-01-26 | 2006-07-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-07-27 | 2010-01-26 | 2010-07-28 | $7700.00 | Window Closed / Lapsed |