CMOS processes

Claim 2

A process for fabricating CMOS integrated circuits in semiconductor wafers having p-type regions and n-type regions, the process comprising the following steps: providing upper field and gate insulating layers on a semiconductor wafer; defining a first portion in a p-type region for formation of an n-channel MOS transistor having LDD regions, a second portion in a p-type region for formation of an n-channel MOS transistor void of LDD regions, and a third portion in an n-type region for formation of a p-channel MOS transistor; applying a layer of conductive material atop the insulating layers; selectively patterning the conductive material layer to define a gate and exposed source and drain areas within the first portion, and to cover the second and third portions; doping exposed areas with n-type dopant material to a selected first concentratin to form LDD regions in the first portion, the conductive material masking the covered second and third portions from implantation of n-type dopant material during such first concentration doping; forming insulating spacers over edges of the conductive material defining the first portion gate to cover portions of the LDD regions within the first portion; doping exposed areas with n-type dopant material to a selected second concentration which is greater than the first concentration to form a source and a drain in the first portion having LDD regions, the conductive material masking the covered second and third portions from implantation of n-type dopant material during such second concentration doping; selectively patterning the conductive material layer to define a gate and exposed source and drain areas within the second portion, and to cover the third portion; doping exposed areas with n-type dopant material to a selected third concentration to form a source and a drain in the second portion which is void of LDD regions, the conductive material masking the covered third portion from implantation of n-type dopant material during such third concentration doping; selectively patterning the conductive material layer to define a gate and exposed source and drain areas within the third portion; and doping exposed areas with p-type dopant material to a selected fourth concentration to form a source and a drain in the third portion.

Claim 3

The process for fabricating CMOS integrated circuits of claim 1 wherein the recited conductive material is everywhere conductively doped polysilicon.

Claim 4

The process for fabricating CMOS integrated circuits of claim 1 wherein the selective patterning steps each comprise application and exposure of a photoresist layer to define the gate in the particular first, second, or third portion, such photoresist covering the remaining of the first, second, and third portions after exposure.

Claim 5

The process for fabricating CMOS integrated circuits of claim 1 further comprising providing a first p-type implant of a selected fifth concentration within the first portion.

Claim 6

The process for fabricating CMOS integrated circuits of claim 4 wherein the selective patterning steps each comprise application and exposure of a photoresist layer to define the gate in the particular first, second, or third portion, such photoresist covering the remaining of the first, second, and third portions after exposure.

Claim 7

The process for fabricating CMOS integrated circuits of claim 1 further comprising providing a first p-type implant of a selected fifth concentration within the first portion and within the second portion.

Claim 8

The process for fabricating CMOS integrated circuits of claim 1 further comprising: doping exposed areas within the first portion with p-type dopant material of a selected sixth concentration after selectively patterning the conductive material layer to define a gate and exposed source and drain areas within the first portion; applying a first spacer layer of insulating material along edges of the first portion gate; then doping exposed areas of the first portion with the n-type dopant material of the selected first concentration for formation of LDD regions; applying a second spacer layer of insulating material over the first spacer layer along edges of the first portion gate to cover portions of the LDD regions within the first portion; and then doping exposed areas of the first portion with the n-type dopant material of the selected second concentration for formation of the first portion source and drains.

Claim 9

The process for fabricating CMOS integrated circuits of claim 7 wherein the selective patterning steps each comprise application and exposure of a photoresist layer to define the gate in the particular first, second, or third portion, such photoresist covering the remaining of the first, second, and third portions after exposure.

Claim 10

The process for fabricating CMOS integrated circuits of claim 1 further comprising: providing a first p-type implant of a selected fifth concentration within the first portion. doping exposed areas within the first portion with p-type dopant material of a selected sixth concentration to provide a second p-type implant after selectively patterning the conductive material layer to define a gate and exposed source and drain areas within the first portion, the sixth concentration being greater than the fifth concentration; applying a first spacer layer of insulating material along edges of the first portion gate; then doping exposed areas of the first portion with the n-type dopant material of the selected first concentration for formation of LDD regions; applying a second spacer layer of insulating material over the first spacer layer along edges of the first portion gate to cover portions of the LDD regions within the first portion; and then doping exposed areas of the first portion with the n-type dopant material of the selected second concentration for formation of the first portion source and drains.

Claim 11

The process for fabricating CMOS integrated circuits of claim 9 wherein the selective patterning steps each comprise application and exposure of a photoresist layer to define the gate in the particular first, second, or third portion, such photoresist covering the remaining of the first, second, and third portions after exposure.

Claim 12

The process for fabricating CMOS integrated circuits of claim 1 further comprising applying a layer of reinforcing material over edges of the second portion gate prior to doping exposed second portion areas with the n-type dopant material of the third concentration.

Claim 13

The process for fabricating CMOS integrated circuits of claim 1 wherein the third portion gate is selectively patterned by a photoresist undercutting etch which produces a photoresist overhang, and wherein the doping of the exposed third portion areas with p-type dopant material is conducted prior to removing the photoresist overhang.

Claim 14

The process for fabricating CMOS integrated circuits of claim 1 further comprising applying a layer of reinforcing material over edges of the second portion gate prior to doping exposed second portion areas with the n-type dopant material of the third concentration; and wherein, the third portion gate is selectively patterned by a photoresist undercutting etch which produces a photoresist overhang, and wherein the doping of the exposed third portion areas with p-type dopant material is conducted prior to removing the photoresist overhang.

Claim 15

A process for fabricating CMOS integrated circuits in semiconductor wafers having p-type regions and n-type regions, the process comprising the following steps: providing upper field and gate insulating layers on a semiconductor wafer; defining a first portion in a p-type region for formation of an n-channel MOS transistor having LDD regions, a second portion in a p-type region for formation of an n-channel MOS transistor void of LDD regions, and a third portion in an n-type region for formation of a p-channel MOS transistor; applying a layer of conductive material atop the insulating layers; selectively patterning the conductive material layer to define a gate and exposed source and drain areas within the first portion, and to cover the second and third portions; doping exposed areas with n-type dopant material to a selected first concentration to form LDD regions in the first portion, the conductive material masking the covered second and third portions from implantation of n-type dopant material during such first concentration doping; forming insulating spacers over edges of the conductive material defining the first portion gate to cover portions of the LDD regions within the first portion; doping exposed areas with n-type dopant material to a selected second concentration which is greater than the first concentration to form a source and a drain in the first portion having LDD regions, the conductive material masking the covered second and third portions from implantation of n-type dopant material during such second concentration doping; selectively patterning the conductive material layer to define a gate and exposed source and drain areas within the third portion, and to cover the second portion; doping exposed areas with p-type dopant material to a selected fourth concentration to form a source and a drain in the third portion, the conductive material masking the covered second portion from implantation of p-type dopant material during such fourth concentration doping; selectively patterning the conductive material layer to define a gate and exposed source and drain areas within the second portion; and doping exposed areas with n-type dopant material to a selected third concentration to form a source and a drain in the second portion which is void of LDD regions.

Claim 16

A process for fabricating CMOS integrated circuits in semiconductor wafers having p-type regions and n-type regions, the process comprising the following steps: providing upper field and gate insulating layers on a semiconductor wafer; defining a first portion in a p-type region for formation of an n-channel MOS transistor having LDD regions, a second portion in a p-type region for formation of an n-channel MOS transistor void of LDD regions, and a third portion in an n-type region for formation of a p-channel MOS transistor; applying a layer of conductive material atop the insulating layers; selectively patterning the conductive material layer to define a gate and exposed source and drain areas within the first portion, and to cover the second and third portions; doping exposed areas with n-type dopant material to a selected first concentration to form LDD regions in the first portion, the conductive material masking the covered second and third portions from implantation of n-type dopant material during such first concentration doping; forming insulating spacers over edges of the conductive material defining the first portion gate to cover portions of the LDD regions within the first portion; doping exposed areas with n-type dopant material to a selected second concentration which is greater than the first concentration to form a source and a drain in the first portion having LDD regions, the conductive material masking the covered second and third portions from implantation of n-type dopant material during such second concentration doping; selectively patterning the conductive material layer to define a gate and exposed source and drain areas within the third portion, and to cover the second portion; doping exposed areas with p-type dopant material to a selected fourth concentration to form a source and a drain in the third portion, the conductive material masking the covered second portion from implantation of p-type dopant material during such fourth concentration doping; selectively patterning the conductive material layer to define a gate and exposed source and drain areas within the second portion; and doping exposed areas with n-type dopant material to a selected third concentration to form a source and a drain in the second portion which is void of LDD regions.

Claim 17

A process for fabricating CMOS integrated circuits in semiconductor wafers having p-type regions and n-type regions, the process comprising the following steps: providing upper field and gate insulating layers on a semiconductor wafer; defining a first portion in a p-type region for formation of an n-channel MOS transistor having LDD regions, a second portion in a p-type region for formation of an n-channel MOS transistor void of LDD regions, and a third portion in an n-type region for formation of a p-channel MOS transistor; applying a layer of conductive material atop the insulating layers; selectively patterning the conductive material layer to define a gate and exposed source and drain areas within the second portion, and to cover the first and third portions; doping exposed areas with n-type dopant material to a selected third concentration to form a source and a drain in the second portion which is void of LDD regions, the conductive material masking the covered first and third portions from implantation of n-type dopant material during such third concentration doping; selectively patterning the conductive material layer to define a gate and exposed source and drain areas within the first portion, and to cover the third portion; doping exposed areas with n-type dopant material to a selected first concentration to form LDD regions in the first portion, the conductive material masking the covered third portion from implantation of n-type dopant material during such first concentration doping; forming insulating spacers over edges of the conductive material defining the first portion gate to cover portions of the LDD regions within the first portion; doping exposed areas with n-type dopant material to a selected second concentration which is greater than the first concentration to form a source and a drain in the first portion having LDD regions, the conductive material masking the covered third portion from implantation of n-type dopant material during such second concentration doping; selectively patterning the conductive material layer to define a gate and exposed source and drain areas within the third portion; and doping exposed areas with p-type dopant material to a selected fourth concentration to form a source and a drain in the third portion.

Claim 18

A process for fabricating CMOS integrated circuits in semiconductor wafers having p-type regions and n-type regions, the process comprising the following steps: providing upper field and gate insulating layers on a semiconductor wafer; defining a first portion in a p-type region for formation of an n-channel MOS transistor having LDD regions, a second portion in a p-type region for formation of an n-channel MOS transistor void of LDD regions, and a third portion in an n-type region for formation of a p-channel MOS transistor; applying a layer of conductive material atop the insulating layers; selectively patterning the conductive material layer to define a gate and exposed source and drain areas within the second portion, and to cover the first and third portions; doping exposed areas with n-type dopant material to a selected third concentration to form a source and a drain in the second portion which is void of LDD regions, the conductive material masking the covered first and third portions from implantation of n-type dopant material during such third concentration doping; selectively patterning the conductive material layer to define a gate and exposed source and drain areas within the first portion, and to cover the third portion; doping exposed areas with n-type dopant material to a selected first concentration to form LDD regions in the first portion, the conductive material masking the covered third portion from implantation of n-type dopant material during such first concentration doping; forming insulating spacers over edges of the conductive material defining the first portion gate to cover portions of the LDD regions within the first portion; doping exposed areas with n-type dopant material to a selected second concentration which is greater than the first concentration to form a source and a drain in the first portion having LDD regions, the conductive material masking the covered third portion from implantation of n-type dopant material during such second concentration doping; selectively patterning the conductive material layer to define a gate and exposed source and drain areas within the third portion; and doping exposed areas with p-type dopant material to a selected fourth concentration to form a source and a drain in the third portion.

Claim 19

A process for fabricating CMOS integrated circuits in semiconductor wafers having p-type regions and n-type regions, the process comprising the following steps: providing upper field and gate insulating layers on a semiconductor wafer; defining a first portion in a p-type region for formation of an n-channel MOS transistor having LDD regions, a second portion in a p-type region for formation of an n-channel MOS transistor void of LDD regions, and a third portion in an n-type region for formation of a p-channel MOS transistor; applying a layer of conductive material atop the insulating layers; selectively patterning the conductive material layer to define a gate and exposed source and drain areas within the second portion, and to cover the first and third portions; doping exposed areas with n-type dopant material to a selected third concentration to form a source and a drain in the second portion which is void of LDD regions, the conductive material masking the covered first and third portions from implantation of n-type dopant material during such third concentration doping; selectively patterning the conductive material layer to define a gate and exposed source and drain areas within the third portion, and to cover the first portion; doping exposed areas with p-type dopant material to a selected fourth concentration to form a source and a drain in the third portion, the conductive material masking the covered first portion from implantation of p-type dopant material during such fourth concentration doping; selectively patterning the conductive material layer to define a gate and exposed source and drain areas within the first portion; doping exposed areas with n-type dopant material to a selected first concentration to form LDD regions in the first portion; forming insulating spacers over edges of the conductive material defining the first portion gate to cover portions of the LDD regions within the first portion; and doping exposed areas with n-type dopant material to a selected second concentration which is greater than the first concentration to form a source and a drain in the first portion having LDD regions.

Claim 20

A process for fabricating CMOS integrated circuits in semiconductor wafers having p-type regions and n-type regions, the process comprising the following steps: providing upper field and gate insulating layers on a semiconductor wafer; defining a first portion in a p-type region for formation of an n-channel MOS transistor having LDD regions, a second portion in a p-type region for formation of an n-channel MOS transistor void of LDD regions, and a third portion in an n-type region for formation of a p-channel MOS transistor; applying a layer of conductive material atop the insulating layers; selectively patterning the conductive material layer to define a gate and exposed source and drain areas within the second portion, and to cover the first and third portions; doping exposed areas with n-type dopant material to a selected third concentration to form a source and a drain in the second portion which is void of LDD regions, the conductive material masking the covered first and third portions from implantation of n-type dopant material during such third concentration doping; selectively patterning the conductive material layer to define a gate and exposed source and drain areas within the third portion, and to cover the first portion; doping exposed areas with p-type dopant material to a selected fourth concentration to form a source and a drain in the third portion, the conductive material masking the covered first portion from implantation of p-type dopant material during such fourth concentration doping; selectively patterning the conductive material layer to define a gate and exposed source and drain areas within the first portion; doping exposed areas with n-type dopant material to a selected first concentration to form LDD regions in the first portion; forming insulating spacers over edges of the conductive material defining the first portion gate to cover portions of the LDD regions within the first portion; and doping exposed areas with n-type dopant material to a selected second concentration which is greater than the first concentration to form a source and a drain in the first portion having LDD regions.

Claim 21

A process for fabricating CMOS integrated circuits in semiconductor wafers having p-type regions and n-type regions, the process comprising the following steps: providing upper field and gate insulating layers on a semiconductor wafer; defining a first portion in a p-type region for formation of an n-channel MOS transistor having LDD regions, a second portion in a p-type region for formation of an n-channel MOS transistor void of LDD regions, and a third portion in an n-type region for formation of a p-channel MOS transistor; applying a layer of conductive material atop the insulating layers; selectively patterning the conductive material layer to define a gate and exposed source and drain areas within the third portion, and to cover the first and second portions; doping exposed areas with p-type dopant material to a selected fourth concentration to form a source and a drain in the third portion, the conductive material masking the covered first and second portions from implantation of p-type dopant material during such third concentration doping; selectively pattering the conductive material layer to define a gate and exposed source and drain areas within the first portion, and to cover the second portion; doping exposed areas with n-type dopant material to a selected first concentration to form LDD regions in the first portion, the conductive material masking the covered second portion from implantation of n-type dopant material during such first concentration doping; forming insulating spacers over edges of the conductive material defining the first portion gate to cover portions of the LDD regions within the first portion; doping exposed areas with n-type dopant material to a selected second concentration which is greater than the first concentration to form a source and a drain in the first portion having LDD regions, the conductive material masking the covered second portion from implantation of n-type dopant material during such second concentration doping; selectively patterning the conductive material layer to define a gate and exposed source and drain areas within the second portion; and doping exposed areas with n-type dopant material to a selected third concentration to form a source and a drain in the second portion which is void of LDD regions.

Claim 22

A process for fabricating CMOS integrated circuits in semiconductor wafers having p-type regions and n-type regions, the process comprising the following steps: providing upper field and gate insulating layers on a semiconductor wafer; defining a first portion in a p-type region for formation of an n-channel MOS transistor having LDD regions, a second portion in a p-type region for formation of an n-channel MOS transistor void of LDD regions, and a third portion in an n-type region for formation of a p-channel MOS transistor; applying a layer of conductive material atop the insulating layers; selectively patterning the conductive material layer to define a gate and exposed source and drain areas within the third portion, and to cover the first and second portions; doping exposed areas with p-type dopant material to a selected fourth concentration to form a source and a drain in the third portion, the conductive material masking the covered first and second portions from implantation of p-type dopant material during such third concentration doping; selectively pattering the conductive material layer to define a gate and exposed source and drain areas within the first portion, and to cover the second portion; doping exposed areas with n-type dopant material to a selected first concentration to form LDD regions in the first portion, the conductive material masking the covered second portion from implantation of n-type dopant material during such first concentration doping; forming insulating spacers over edges of the conductive material defining the first portion gate to cover portions of the LDD regions within the first portion; doping exposed areas with n-type dopant material to a selected second concentration which is greater than the first concentration to form a source and a drain in the first portion having LDD regions, the conductive material masking the covered second portion from implantation of n-type dopant material during such second concentration doping; selectively patterning the conductive material layer to define a gate and exposed source and drain areas within the second portion; and doping exposed areas with n-type dopant material to a selected third concentration to form a source and a drain in the second portion which is void of LDD regions.

Claim 23

A process for fabricating CMOS integrated circuits in semiconductor wafers having p-type regions and n-type regions, the process comprising the following steps: providing upper field and gate insulating layers on a semiconductor wafer; defining a first portion in a p-type region for formation of an n-channel MOS transistor having LDD regions, a second portion in a p-type region for formation of an n-channel MOS transistor void of LDD regions, and a third portion in an n-type region for formation of a p-channel MOS transistor; applying a layer of conductive material atop the insulating layers; selectively patterning the conductive material layer to define a gate and exposed source and drain areas within the third portion, and to cover the first and second portions; doping exposed areas with p-type dopant material to a selected fourth concentration to form a source and a drain in the third portion, the conductive material masking the covered first and second portions from implantation of p-type dopant material during such third concentration doping; selectively patterning the conductive material layer to define a gate and exposed source and drain areas within the second portion, and to cover the first portion; doping exposed areas with n-type dopant material to a selected third concentration to form a source and a drain in the second portion which is void of LDD regions, the conductive material masking the covered first portion from implantation of n-type dopant material during such third concentration doping; selectively patterning the conductive material layer to define a gate and exposed source and drain areas within the first portion; doping exposed areas with n-type dopant material to a selected first concentration to form LDD regions in the first portion; forming insulating spacers over edges of the conductive material defining the first portion gate to cover portions of the LDD regions within the first portion; doping exposed areas with n-type dopant material to a selected second concentration which is greater than the first concentration to form a source and a drain in the first portion having LDD regions.

Claim 24

A process for fabricating CMOS integrated circuits in semiconductor wafers having p-type regions and n-type regions, the process comprising the following steps: providing upper field and gate insulating layers on a semiconductor wafer; defining a first portion in a p-type region for formation of an n-channel MOS transistor having LDD regions, a second portion in a p-type region for formation of an n-channel MOS transistor void of LDD regions, and a third portion in an n-type region for formation of a p-channel MOS transistor; applying a layer of conductive material atop the insulating layers; selectively patterning the conductive material layer to define a gate and exposed source and drain areas within the third portion, and to cover the first and second portions; doping exposed areas with p-type dopant material to a selected fourth concentration to form a source and a drain in the third portion, the conductive material masking the covered first and second portions from implantation of p-type dopant material during such third concentration doping; selectively patterning the conductive material layer to define a gate and exposed source and drain areas within the second portion, and to cover the first portion; doping exposed areas with n-type dopant material to a selected third concentration to form a source and a drain in the second portion which is void of LDD regions, the conductive material masking the covered first portion from implantation of n-type dopant material during such third concentration doping; selectively patterning the conductive material layer to define a gate and exposed source and drain areas within the first portion; doping exposed areas with n-type dopant material to a selected first concentration to form LDD regions in the first portion; forming insulating spacers over edges of the conductive material defining the first portion gate to cover portions of the LDD regions within the first portion; doping exposed areas with n-type dopant material to a selected second concentration which is greater than the first concentration to form a source and a drain in the first portion having LDD regions.