US5291052A
Expired / Lapsed
US
⏱️ 0.0 years remaining
CMOS semiconductor device with (LDD) NMOS and single drain PMOS
Assignee: Samsung Electronics Co Ltd
•
Filing: 1991-08-30
•
Granted: 1994-03-01
•
Expires: 2011-08-30
Abstract
Abstract A MOS semiconductor device and the methods for constructing the device. The MOS device provided with first and second MOS transistors are formed on two identical wafer sections. The impurity region of the first transistor and a first group of gate side wall spacers are aligned to the gate of the first transistor. The impurity region of the second transistor and a second group of gate side wall spacers are aligned to the gate of the second MOS transistor. The second group of gate side wall spacers have a thickness different from that of the first group of gate side wall spacers.
Inventors
- 👤 Kyeong-tae Kim
- 👤 Do-chan Choi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 14:08
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/0184; H10D84/02; H10D84/03; H10D84/038; H10D84/80; H10D84/82; H10D84/83; H10D84/85; H10D84/859; Y; Y10; Y10S; Y10S257/00; Y10S257/90
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
152 words
A MOS semiconductor device having groups of transistors, each group comprising: an NMOS transistor on a first silicon wafer section including a first gate electrode, a first group of side wall spacers, each spacer of said first group of side wall spacers being adjacent to a side wall of said first gate electrode, and a first impurity region self-aligned to each side wall spacer of said first group of said side wall spacers; and a PMOS transistor on a second silicon wafer section including a second gate electrode, a second group of side wall spacers, each of the second group of side wall spacers being adjacent to a side wall of said second gate electrode, said second group of side wall spacers having a thickness greater than that of said first group of side wall spacers, and a second impurity region self-aligned to each of said second group of side wall spacers.
Claim 2
Dependent Claim
152 words
A MOS semiconductor device having groups of transistors, each group comprising: an NMOS transistor on a first silicon wafer section including a first gate electrode, a first group of side wall spacers, each spacer of said first group of side wall spacers being adjacent to a side wall of said first gate electrode, and a first impurity region self-aligned to each side wall spacer of said first group of said side wall spacers; and a PMOS transistor on a second silicon wafer section including a second gate electrode, a second group of side wall spacers, each of the second group of side wall spacers being adjacent to a side wall of said second gate electrode, said second group of side wall spacers having a thickness greater than that of said first group of side wall spacers, and a second impurity region self-aligned to each of said second group of side wall spacers.
Claim 3
Dependent Claim
60 words
A MOS semiconductor device as claimed in claim 1, wherein the difference between the thickness of said second group of side wall spacers and said first group of side wall spacers is proportional to the difference between a diffusion rate of an impurity in said first impurity region and a diffusion rate of another impurity in said second impurity region.
Claim 4
Dependent Claim
39 words
A MOS semiconductor device as in claim 1, said NMOS transistor further including a third impurity region self-aligned to said first gate electrode, said third impurity region having an impurity concentration lower than that of said first impurity region.
References Cited (Backward Citations)
DE244607C
Cited
DE401113C
Cited
US4577391A
Cited
US4661833A
Cited
US4937645A
Cited
US5024960A
Cited
US5021354A
Cited
DE4110645A1
Cited
US5023190A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-02-28 | 1997-08-30 | 1998-03-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-02-28 | 2001-08-30 | 2002-03-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-02-28 | 2005-08-30 | 2006-03-01 | $7700.00 | Window Closed / Lapsed |