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Patent US5780902A successfully refreshed from Google Patents.
US5780902A
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Semiconductor device having LDD structure with pocket on drain side
Assignee: Longitude Semiconductor SARL
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Filing: 1996-12-06
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Granted: 1998-07-14
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Expires: 2016-12-06
Abstract
Abstract A semiconductor device with an LDD structure type MOS transistor is fabricated by forming a gate electrode on a semiconductor layer of a first conductivity type and a source/drain region in the semiconductor layer, the source/drain region having a high impurity concentration region and a low impurity concentration region of a second conductivity type. A pocket of the first conductivity type is formed in contact with the low impurity concentration region only on a drain region side and immediately under the low concentration region of the second conductivity type. The pocket formed only on the drain side can suppress the short channel effect and also the hot carrier generation without lowering the current capacity on the source side where no pocket is present.
Inventors
- 👤 Toshio Komuro
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 05:29
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/17; H10D62/351; H10D62/357; H10D62/364; H10D62/371; H10D30/00; H10D30/01; H10D30/021; H10D30/0221; H10D30/60; H10D30/601; H10D30/603; H10P; H10P30/00; H10P30/20; H10P30/22; H10P30/221; H10P30/222
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
88 words
A semiconductor device comprising: an LDD structure type MOS transistor including a gate electrode formed on a semiconductor layer of a first conductivity type; a source/drain region formed in said semiconductor layer and having a high impurity concentration region and a low impurity concentration region of a second conductivity type; and a low impurity concentration region pocket of said first conductivity type formed only on a drain region side, said pocket being effective to suppress short channel effect as well as hot carrier generation, without reducing current capacity.
Claim 2
Dependent Claim
88 words
A semiconductor device comprising: an LDD structure type MOS transistor including a gate electrode formed on a semiconductor layer of a first conductivity type; a source/drain region formed in said semiconductor layer and having a high impurity concentration region and a low impurity concentration region of a second conductivity type; and a low impurity concentration region pocket of said first conductivity type formed only on a drain region side, said pocket being effective to suppress short channel effect as well as hot carrier generation, without reducing current capacity.
Claim 3
Dependent Claim
24 words
A semiconductor device according to claim 1, wherein said pocket is disposed immediately under said low impurity concentration region of the second conductivity type.
Claim 4
Dependent Claim
33 words
A semiconductor device according to claim 1, in which said pocket extends at least partly into a region between said low impurity concentration region of the second conductivity type and a channel region.
Claim 5
Dependent Claim
33 words
A semiconductor device according to claim 2, in which said pocket extends at least partly into a region between said low impurity concentration region of the second conductivity type and a channel region.
References Cited (Backward Citations)
US4514897A
Cited
USRE32800E
Cited
US4597824A
Cited
US4636822A
Cited
US4649629A
Cited
US4986639A
Cited
JPH04211178A
Cited
US5177568A
Cited
US5424567A
Cited
JPH05267331A
Cited
US5371395A
Cited
US5198687A
Cited
US5449937A
Cited
US5532508A
Cited
US5583364A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-07-13 | 2002-01-12 | 2002-07-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-07-13 | 2006-01-12 | 2006-07-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-07-13 | 2010-01-12 | 2010-07-14 | $7700.00 | Window Closed / Lapsed |