US4597824A
Expired / Lapsed
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Method of producing semiconductor device
Assignee: Toshiba Corp
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Filing: 1984-11-09
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Granted: 1986-07-01
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Expires: 2004-11-09
Abstract
Abstract A method of producing a MOS transistor of LDD structure with p(n) type pockets. A doped oxide film in which impurities such as phosphorus and impurities such as arsenic are doped is formed on a semiconductor substrate, and a nitride film is formed in regions where p type pockets are formed on the both sides of a gate electrode. By implementing heat treatment in the atmosphere of oxygen, the portion below the nitride film is placed in the condition where it is equivalent when heat treated in the atmosphere of nitrogen whereby a p type impurity region and an n - type impurity region are formed. The region except for that below the nitride film is heat treated in the atmosphere of oxygen to form an n + type impurity region. Further, with the gate electrode as a mask, n - type impurity region and p type impurity region are formed, thereafter selectively growing a film on the side walls of the gate electrode to form an n + type impurity region with the gate electrode and the film as masks, thus producing a MOS transistor.
Inventors
- 👤 Kazuyoshi Shinada
- 👤 Masaki Sato
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 13:36
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/0227; H10D30/60; H10D30/601; H10D30/605; H10D62/00; H10D62/10; H10D62/17; H10D62/351; H10D62/357; H10D62/364; H10D62/371; H10P; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/141; H10P32/17; H10P32/171; H10P76/00; H10P76/40; H10P76/408; H10P76/4085
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
156 words
A method of producing a semiconductor device comprising the steps of: (a) forming a gate oxide film on a semiconductor substrate of a first conductivity type; (b) forming a gate electrode on said gate (c) forming a doped oxide film in which impurities of the first conductivity type and impurities of a second conductivity type are doped on said semiconductor substrate; (d) forming a nitride film on the both side regions of the gate electrode on said doped oxide film; and (e) implementing heat treatment in the atmosphere of oxygen to form impurity regions of the first conductivity type in a region below said nitride film and impurity regions of the second conductivity type having a depth smaller than that of said impurity regions of the first conductivity type, and to form second impurity regions of the second conductivity type having an impurity concentration larger than that of said impurity regions of the second conductivity type.
Claim 2
Independent Claim
156 words
A method of producing a semiconductor device comprising the steps of: (a) forming a gate oxide film on a semiconductor substrate of a first conductivity type; (b) forming a gate electrode on said gate (c) forming a doped oxide film in which impurities of the first conductivity type and impurities of a second conductivity type are doped on said semiconductor substrate; (d) forming a nitride film on the both side regions of the gate electrode on said doped oxide film; and (e) implementing heat treatment in the atmosphere of oxygen to form impurity regions of the first conductivity type in a region below said nitride film and impurity regions of the second conductivity type having a depth smaller than that of said impurity regions of the first conductivity type, and to form second impurity regions of the second conductivity type having an impurity concentration larger than that of said impurity regions of the second conductivity type.
Claim 3
Dependent Claim
26 words
A method according to claim 1, wherein said impurity of the first conductivity type is boron and said impurity of the second conductivity type is arsenic.
Claim 4
Dependent Claim
50 words
A method according to claim 1, wherein said step of forming said doped oxide film comprises the steps of stacking said doped oxide film on said semiconductor substrate by sputtering method, and removing said doped oxide film on the side walls of said gate oxide film and said gate electrode.
Claim 5
Dependent Claim
59 words
A method according to claim 1, wherein said step of forming said nitride film comprises the steps of forming a nitride film on said doped oxide film and on the side walls of said gate electrode, and etching said nitride film by reactive ion etching to leave said nitride film only on the side walls of said gate electrode.
Claim 6
Dependent Claim
60 words
A method according to claim 2, wherein said step of forming said nitride film comprises the steps of forming a nitride film on said doped oxide film and on the side walls of said gate electrode, and etching said nitride film by reactive ion etching method to leave said nitride film only on the side walls of said gate electrode.
Claim 7
Independent Claim
155 words
A method of producing a semiconductor device comprising the steps of: (a) forming a gate oxide film on a semiconductor substrate of a first conductivity type; (b) forming a gate electrode on said gate oxide film; (c) ion implanting impurities of the first conductivity type using said gate electrode as a mask to form impurity regions of the first conductivity type and ion implanting impurities of a second conductivity type using said gate electrode as a mask to form impurity regions of the second conductivity type having a depth smaller than that of said impurity regions of the first conductivity type; (d) selectively growing a film at least on side walls of said gate electrode; and (e) ion implanting impurities of the second conductivity type using said gate electrode and said film as masks to form second impurity regions having an impurity concentration higher than that of said impurity regions of the second conductivity type.
Claim 8
Independent Claim
155 words
A method of producing a semiconductor device comprising the steps of: (a) forming a gate oxide film on a semiconductor substrate of a first conductivity type; (b) forming a gate electrode on said gate oxide film; (c) ion implanting impurities of the first conductivity type using said gate electrode as a mask to form impurity regions of the first conductivity type and ion implanting impurities of a second conductivity type using said gate electrode as a mask to form impurity regions of the second conductivity type having a depth smaller than that of said impurity regions of the first conductivity type; (d) selectively growing a film at least on side walls of said gate electrode; and (e) ion implanting impurities of the second conductivity type using said gate electrode and said film as masks to form second impurity regions having an impurity concentration higher than that of said impurity regions of the second conductivity type.
Claim 9
Dependent Claim
26 words
A method according to claim 6, wherein said gate electrode is made of polycrystalline silicon and said film comprises a metal film having high melting point.
Claim 10
Dependent Claim
35 words
A method according to claim 7, which further comprises the step of heating said gate electrode and said film to form silicate metal film having high melting point on the surface of said gate electrode.
Claim 11
Dependent Claim
26 words
A method according to claim 6, wherein said impurity of the first conductivity type is boron, and said impurity of the second conductivity type is arsenic.
Claim 12
Independent Claim
149 words
A method of producing a semiconductor device comprising the steps of: (a) forming a gate oxide film on a semiconductor substrate of a first conductivity type; (b) forming a gate electrode on said gate oxide film; (c) selectively growing a film at least on side walls of said gate electrode; (d) ion implanting impurities of a second conductivity type using said gate electrode and said film as masks to form impurity regions of the second conductivity type; (e) removing said film; and (f) ion implating impurities of the first conductivity type using said gate electrode as a mask to form impurity regions of the first conductivity type and ion implanting impurities of the second conductivity type using said gate electrode as a mask to form second impurity regions of the second conductivity type having an impurity concentration lower than that of said impurity regions of the first conductivity type.
Claim 13
Independent Claim
149 words
A method of producing a semiconductor device comprising the steps of: (a) forming a gate oxide film on a semiconductor substrate of a first conductivity type; (b) forming a gate electrode on said gate oxide film; (c) selectively growing a film at least on side walls of said gate electrode; (d) ion implanting impurities of a second conductivity type using said gate electrode and said film as masks to form impurity regions of the second conductivity type; (e) removing said film; and (f) ion implating impurities of the first conductivity type using said gate electrode as a mask to form impurity regions of the first conductivity type and ion implanting impurities of the second conductivity type using said gate electrode as a mask to form second impurity regions of the second conductivity type having an impurity concentration lower than that of said impurity regions of the first conductivity type.
Claim 14
Dependent Claim
26 words
A method according to claim 10, wherein said gate electrode is made of polycrystalline silicon and said film is a metal film having high melting point.
Claim 15
Dependent Claim
36 words
A method according to claim 10, which further comprises the step of heating said gate electrode and said film to form a silicate metal film having high melting point on the surface of said gate electrode.
Claim 16
Dependent Claim
26 words
A method according to claim 10, wherein said impurity of the first conductivity type is boron and said impurity of the second conductivity type is arsenic.
Claim 17
Independent Claim
208 words
A method of producing a semiconductor device comprising the steps of: (a) forming a gate oxide film on a semiconductor substrate of a first conductivity type; (b) forming a gate electrode on said gate oxide film; (c) ion implanting impurities of the first conductivity type using said gate electrode as a mask to form impurity regions of the first conductivity type and ion implating impurities of a second conductivity type using said gate electrode as a mask to form impurity regions of the second conductivity type having a depth smaller than that of said impurity regions of the first conductivity type; (d) forming a high melting point metal layer on the surface of said gate electrode and on said impurity regions of the second conductivity type so that portions on side walls of said gate electrode become thick; (e) ion implanting impurities of the second conductivity type from on said high melting point metal layer; and (f) implementing heat treatment to form a high melting point metal compound layer on the surface of said impurity regions of the second conductivity type, and to form second impurity regions of the second conducitvity type having an impurity concentration larger than that of said impurity regions of the second conductivity type.
Claim 18
Independent Claim
208 words
A method of producing a semiconductor device comprising the steps of: (a) forming a gate oxide film on a semiconductor substrate of a first conductivity type; (b) forming a gate electrode on said gate oxide film; (c) ion implanting impurities of the first conductivity type using said gate electrode as a mask to form impurity regions of the first conductivity type and ion implating impurities of a second conductivity type using said gate electrode as a mask to form impurity regions of the second conductivity type having a depth smaller than that of said impurity regions of the first conductivity type; (d) forming a high melting point metal layer on the surface of said gate electrode and on said impurity regions of the second conductivity type so that portions on side walls of said gate electrode become thick; (e) ion implanting impurities of the second conductivity type from on said high melting point metal layer; and (f) implementing heat treatment to form a high melting point metal compound layer on the surface of said impurity regions of the second conductivity type, and to form second impurity regions of the second conducitvity type having an impurity concentration larger than that of said impurity regions of the second conductivity type.
Claim 19
Dependent Claim
102 words
A method according to claim 14, wherein said step of forming said impurity regions of the first conductivity type and said impurity regions of the second conductivity type comprises the steps of ion implanting impurities of the first and second conductivity types in said substrate, heating said substrate in the atmosphere of oxygen to form impurity regions of the first conductivity and impurity regions of the second conductivity and to form an oxide film on the surface of said gate electrode and on the surface of said semiconductor substrate, and removing said oxide film formed on the surface of said semiconductor substrate.
Claim 20
Dependent Claim
119 words
A method according to claim 14, wherein said step for forming said impurity regions of the first conductivity type and said impurity regions of the second conductivity type comprises the steps of ion implanting impurities of the first conductivity type and impurities of the second conductivity type in said substrate, heating said substrate in the atmosphere of oxygen to form said impurity regions of the first conductivity type and said impurity regions of the second impurity type and to form an oxide film on the surface of said gate electrode and on the surface of said semiconductor substrate, and completely removing said oxide film, thus forming a high melting metal compound layer on the surface of said gate electrode.
Claim 21
Dependent Claim
36 words
A method according to claim 14, wherein said high melting point metal layer is formed on the surface of said gate electrode and on said impurity regions of the second conductivity type by vapor growth method.
Claim 22
Dependent Claim
26 words
A method according to claim 14, wherein said impurity of the first conductivity type is boron and said impurity of said second conductivity type is arsenic.
References Cited (Backward Citations)
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