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US5767581A
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Gallium nitride-based III-V group compound semiconductor
Assignee: Nichia Corp
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Filing: 1996-06-17
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Granted: 1998-06-16
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Expires: 2016-06-17
Abstract
Abstract A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.
Inventors
- 👤 Shuji Nakamura
- 👤 Takao Yamada
- 👤 Masayuki Senoh
- 👤 Motokazu Yamada
- 👤 Kanji Bando
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 04:56
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/83; H10H20/832; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0116; H10F; H10F71/00; H10F71/138; H10H20/81; H10H20/822; H10H20/824; H10H20/825; H10H20/8252; H10H20/833; H10D62/00; H10D62/80; H10D62/85; H10D62/8503; H10H20/01; H10H20/032; H10H20/831; H10H20/84; H10W; H10W72/00; H10W72/071; H10W72/075; H10W72/07551; H10W72/07554; H10W72/50; H10W72/531; H10W72/536; H10W72/541; H10W72/547; H10W72/551; H10W72/552; H10W72/5522; H10W72/59; H10W72/851; H10W72/874; H10W72/884; H10W72/90; H10W72/921; H10W72/923; H10W72/926; H10W72/951; H10W72/952; H10W90/00; H10W90/701; H10W90/751; H10W90/756; Y; Y02; Y02E; Y02E10/00; Y02E10/50
Claims Analysis
Total Claims: 40
Claim 1
Independent Claim
115 words
A gallium nitride-based III-V group compound semiconductor device, comprising: a substrate having first and second major surfaces; a semiconductor stacked structure arranged over said first major surface of the substrate, and comprising an n-type gallium nitride-based III-V group compound semiconductor layer, and a p-type gallium nitride-based III-V group, compound semiconductor layer said p-type semiconductor layer containing hydrogen; a first electrode provided in electrical contact with said n-type semiconductor layer; and a second electrode provided over, and in electrical contact with said p-type semiconductor layer, and comprising a metallic material, said second electrode being light-transmissive, and establishing an ohmic contact with said p-type semiconductor layer by expelling of said hydrogen in said p-type semiconductor layer therethrough.
Claim 2
Dependent Claim
115 words
A gallium nitride-based III-V group compound semiconductor device, comprising: a substrate having first and second major surfaces; a semiconductor stacked structure arranged over said first major surface of the substrate, and comprising an n-type gallium nitride-based III-V group compound semiconductor layer, and a p-type gallium nitride-based III-V group, compound semiconductor layer said p-type semiconductor layer containing hydrogen; a first electrode provided in electrical contact with said n-type semiconductor layer; and a second electrode provided over, and in electrical contact with said p-type semiconductor layer, and comprising a metallic material, said second electrode being light-transmissive, and establishing an ohmic contact with said p-type semiconductor layer by expelling of said hydrogen in said p-type semiconductor layer therethrough.
Claim 3
Dependent Claim
20 words
The device according to claim 1, wherein said second electrode covers substantially the entire surface of said p-type semiconductor layer.
Claim 4
Dependent Claim
11 words
The device according to claim 2, wherein said substrate is transparent.
Claim 5
Dependent Claim
11 words
The device according to claim 3, wherein said substrate comprises sapphire.
Claim 6
Dependent Claim
23 words
The device according to claim 1, wherein said second electrode comprises at least two metals selected from chromium, nickel, gold, titanium and platinum.
Claim 7
Dependent Claim
29 words
The device according to claim 5, wherein said second electrode comprises a first layer of one metal, and a second layer of another metal provided on said first layer.
Claim 8
Dependent Claim
64 words
A gallium nitride-based II-V Group compound semiconductor device, comprising a p-type gallium nitride based Ill-V Group compound semiconductor layer containing hydrogen, and an electrode provided over, and in electrical contact with said p-type semiconductor layer and comprising a metallic material, said electrode being light-transmissive, and establishing an ohmic contact with said p-type semiconductor layer therethrough, by expelling said hydrogen in said p-type semiconductor layer.
Claim 9
Dependent Claim
64 words
A gallium nitride-based II-V Group compound semiconductor device, comprising a p-type gallium nitride based Ill-V Group compound semiconductor layer containing hydrogen, and an electrode provided over, and in electrical contact with said p-type semiconductor layer and comprising a metallic material, said electrode being light-transmissive, and establishing an ohmic contact with said p-type semiconductor layer therethrough, by expelling said hydrogen in said p-type semiconductor layer.
Claim 10
Dependent Claim
22 words
The device according to claim 7, wherein said electrode comprises at least two metals selected from chromium, nickel, gold, titanium and platinum.
Claim 11
Dependent Claim
29 words
The device according to claim 8, wherein said second electrode comprises a first layer of one metal, and a second layer of another metal provided on said first layer.
Claim 12
Dependent Claim
22 words
The device according to claim 1 comprising a bonding pad electrically connected to said second electrode, for bonding with a bonding wire.
Claim 13
Dependent Claim
24 words
The device according to claim 10, wherein said bonding pad comprises gold, or a metallic material comprising gold and not containing aluminum or chromium.
Claim 14
Dependent Claim
28 words
The device according to claim 10, wherein said bonding pad comprises a metallic material comprising gold and at least one metal selected from titanium, nickel, indium and platinum.
Claim 15
Dependent Claim
20 words
The device according to claim 10, wherein said bonding pad is formed of the same material forming said second electrode.
Claim 16
Dependent Claim
33 words
The device according to claim 10, wherein said bonding pad comprises a layer of nickel provided in direct contact with said second layer, and a layer of gold provided on said nickel layer.
Claim 17
Dependent Claim
35 words
The device according to claim 10, wherein said second electrode has a cut-off portion exposing a part of the surface of said p-type semiconductor layer, and said bonding pad is filled in said cut-off portion.
Claim 18
Dependent Claim
30 words
The device according to claim 15, wherein said bonding pad is formed of a metallic material which adheres to said p-type semiconductor layer more strongly than to said second electrode.
Claim 19
Dependent Claim
27 words
The device according to claim 16, wherein said bonding pad comprises aluminum, or a metallic material comprising at least two metals selected from chromium, aluminum and gold.
Claim 20
Dependent Claim
17 words
The device according to claim 10, wherein said bonding pad is arranged farthest from said first electrode.
Claim 21
Dependent Claim
110 words
A gallium nitride-based III-V Group compound semiconductor device, comprising: a substrate having first and second major surfaces; a semiconductor stacked structure arranged over said first major surface of the substrate, and comprising an n-type gallium nitride-based III-V Group compound semiconductor layer and a p-type gallium nitride-based III-V Group compound semiconductor layer; a first electrode provided in electrical contact with said n-type semiconductor layer; a second electrode provided in electrical contact with said p-type semiconductor layer, and comprising a metallic material, said second electrode being light-transmissive, and establishing an ohmic contact with said p-type semiconductor layer; and a transparent protective layer comprising an electrically insulative material and covering said second electrode.
Claim 22
Dependent Claim
110 words
A gallium nitride-based III-V Group compound semiconductor device, comprising: a substrate having first and second major surfaces; a semiconductor stacked structure arranged over said first major surface of the substrate, and comprising an n-type gallium nitride-based III-V Group compound semiconductor layer and a p-type gallium nitride-based III-V Group compound semiconductor layer; a first electrode provided in electrical contact with said n-type semiconductor layer; a second electrode provided in electrical contact with said p-type semiconductor layer, and comprising a metallic material, said second electrode being light-transmissive, and establishing an ohmic contact with said p-type semiconductor layer; and a transparent protective layer comprising an electrically insulative material and covering said second electrode.
Claim 23
Dependent Claim
20 words
The device according to claim 19, wherein said protective layer comprises silicon oxide, aluminum oxide, titanium oxide or silicon nitride.
Claim 24
Dependent Claim
18 words
The device according to claim 19, wherein said protective layer also covers a surface of said first electrode.
Claim 25
Dependent Claim
20 words
The device according to claim 19, wherein said second electrode covers substantially the entire surface of said p-type semiconductor layer.
Claim 26
Dependent Claim
11 words
The device according to claim 22, wherein said substrate is transparent.
Claim 27
Dependent Claim
11 words
The device according to claim 23, wherein said substrate comprises sapphire.
Claim 28
Dependent Claim
23 words
The device according to claim 19, wherein said second electrode comprises at least two metals selected from chromium, nickel, gold, titanium and platinum.
Claim 29
Dependent Claim
29 words
The device according to claim 25, wherein said second electrode comprises a first layer of one metal, and a second layer of another metal provided on said first layer.
Claim 30
Dependent Claim
22 words
The device according to claim 19, comprising a bonding pad electrically connected to said second electrode for bonding with a bonding wire.
Claim 31
Dependent Claim
24 words
The device according to claim 27, wherein said bonding pad comprises gold, or a metallic material comprising gold and not containing aluminum or chromium.
Claim 32
Dependent Claim
28 words
The device according to claim 27, wherein said bonding pad comprises a metallic material comprising gold and at least one metal selected from titanium, nickel, indium and platinum.
Claim 33
Dependent Claim
20 words
The device according to claim 27, wherein said bonding pad is formed of the same material forming said second electrode.
Claim 34
Dependent Claim
33 words
The device according to claim 27, wherein said bonding pad comprises a layer of nickel provided in direct contact with said second layer, and a layer of gold provided on said nickel layer.
Claim 35
Dependent Claim
35 words
The device according to claim 27, wherein said second electrode has a cut-off portion exposing a part of the surface of said p-type semiconductor layer, and said bonding pad is filled in said cut-off portion.
Claim 36
Dependent Claim
30 words
The device according to claim 32, wherein said bonding pad is formed of a metallic material which adheres to said p-type semiconductor layer more strongly than to said second electrode.
Claim 37
Dependent Claim
27 words
The device according to claim 33, wherein said bonding pad comprises aluminum, or a metallic material comprising at least two metals selected from chromium, aluminum and gold.
Claim 38
Dependent Claim
17 words
The device according to claim 27, wherein said bonding pad is arranged farthest from said first electrode.
Claim 39
Dependent Claim
32 words
The device according to claim 1, wherein said hydrogen is contained in said p-type semiconductor layer by preparing said p-type semiconductor layer by a chemical vapor deposition utilizing a reactant containing hydrogen.
Claim 40
Dependent Claim
33 words
The device according to claim 7, wherein said hydrogen is contained in said p-type semiconductor layer by preparing said p-type semiconductor layer by a vapor phase growth method utilizing a reactant containing hydrogen.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-06-15 | 2001-12-15 | 2002-06-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-06-15 | 2005-12-15 | 2006-06-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-06-15 | 2009-12-15 | 2010-06-16 | $7700.00 | Window Closed / Lapsed |