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US5763319A
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Process for fabricating semiconductor devices with shallowly doped regions using dopant compounds containing elements of high solid solubility
Assignee: Advanced Materials Engineering Research Inc
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Filing: 1996-01-19
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Granted: 1998-06-09
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Expires: 2016-01-19
Abstract
Abstract PCT No. PCT/US96/00732 Sec. 371 Date Jun. 5, 1996 Sec. 102(e) Date Jun. 5, 1996 PCT Filed Jan. 19, 1996 PCT Pub. No. WO97/07534 PCT Pub. Date Feb. 27, 1997A method for manufacturing shallowly doped semiconductor devices. In the preferred embodiment, the method includes the steps of: (a) providing a substrate where the substrate material is represented by the symbol Es (element of the substrate); and (b) implanting the substrate with an ion compound represented by the symbol E1xEdy, where E1 represents an element having high solubility in the substrate material with minimal detrimental chemical or electrical effects and can be the same element as the substrate element, Ed (dopant element) represents an element which is an electron acceptor or donor having high solubility limit in the substrate material, and x and y indicate the number of respective E1 and Ed atoms in the ion compound.
Inventors
- 👤 Peiching Ling
- 👤 Tien Tien
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 18:32
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; C; C23; C23C; C23C14/00; C23C14/22; C23C14/48; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/0227; H10D62/00; H10D62/10; H10D62/13; H10D62/149; H10D62/151; H10D62/80; H10D62/83; H10D62/834; H10P30/2044; H10P30/206; H10P30/208; H10P30/21; H10P30/218; H10P30/225; H10P32/00; H10P32/10; H10P32/12; H10P32/1204; H01; H01J; H01J2237/00; H01J2237/06; H01J2237/08; H01J2237/30; H01J2237/317; H01J2237/31701; H10D30/60; H10D30/601
Claims Analysis
Total Claims: 40
Claim 1
Independent Claim
155 words
A method for creating a doped region in a semiconductor device where the semiconductor is formed on a substrate of a selected material, comprising the steps of: a) providing a substrate of a selected material; b) selecting an ion compound including one or more atoms of a dopant element and one or more atoms of one or more complementary elements, the dopant element and the complementary elements each having a solid solubility limit in the material of the substrate, where in the one or more complementary elements are one ore more different elements selected from the group of elements consisting of silicon, germanium, tin, and lead; and c) implanting the selected ion compound into the substrate to form a doped region where the atomic concentration level for each of the dopant element and the complementary elements in the substrate does not exceed the corresponding solid solubility limit of the respective element in the substrate material.
Claim 2
Independent Claim
155 words
A method for creating a doped region in a semiconductor device where the semiconductor is formed on a substrate of a selected material, comprising the steps of: a) providing a substrate of a selected material; b) selecting an ion compound including one or more atoms of a dopant element and one or more atoms of one or more complementary elements, the dopant element and the complementary elements each having a solid solubility limit in the material of the substrate, where in the one or more complementary elements are one ore more different elements selected from the group of elements consisting of silicon, germanium, tin, and lead; and c) implanting the selected ion compound into the substrate to form a doped region where the atomic concentration level for each of the dopant element and the complementary elements in the substrate does not exceed the corresponding solid solubility limit of the respective element in the substrate material.
Claim 3
Dependent Claim
27 words
A method as recited in claim 1 wherein said substrate material is composed of an element selected from the group of elements consisting of silicon, and germanium.
Claim 4
Dependent Claim
13 words
A method as recited in claim 1 wherein said substrate material is diamond.
Claim 5
Dependent Claim
16 words
A method as recited in claim 1 wherein said dopant element is a p-type dopant element.
Claim 6
Dependent Claim
28 words
A method as recited in claim 4 wherein said p-type dopant element is an element selected from the group of elements consisting of boron, aluminum, gallium, and indium.
Claim 7
Dependent Claim
16 words
A method as recited in claim 1 wherein said dopant element is an n-type dopant element.
Claim 8
Dependent Claim
28 words
A method as recited in claim 6 wherein said n-type dopant element is an element selected from the group of elements consisting of nitrogen, phosphorus, antimony, and arsenic.
Claim 9
Dependent Claim
19 words
A method as recited in claim 1 wherein the ion compound further includes one or more atoms of hydrogen.
Claim 10
Dependent Claim
16 words
A method as recited in claim 3 wherein said dopant element is a p-type dopant element.
Claim 11
Dependent Claim
28 words
A method as recited in claim 9 wherein said p-type dopant element is an element selected from the group of elements consisting of boron, aluminum, gallium, and indium.
Claim 12
Dependent Claim
16 words
A method as recited in claim 10 wherein said dopant element is an n-type dopant element.
Claim 13
Dependent Claim
28 words
A method as recited in claim 11 wherein said n-type dopant element is an element selected from the group of elements consisting of nitrogen, phosphorus, antimony, and arsenic.
Claim 14
Dependent Claim
19 words
A method as recited in claim 12 wherein the ion compound further includes one or more atoms of hydrogen.
Claim 15
Dependent Claim
21 words
A method as recited in claim 1 wherein the method is applied to form p-well, n-well, and twin-well on the substrate.
Claim 16
Dependent Claim
19 words
A method as recited in claim 1 wherein the method is applied to adjust threshold voltage of the semiconductor.
Claim 17
Dependent Claim
27 words
A method as recited in claim 1 wherein the method is applied to poly implantation to define poly grain size, sheet resistance, doping level and doping type.
Claim 18
Dependent Claim
18 words
A method as recited in claim 1 wherein the method is applied to form lightly doped drain devices.
Claim 19
Dependent Claim
186 words
A plasma ion implantation method for creating a doped region in a semiconductor device where the semiconductor is formed on a substrate of a selected material, comprising the steps of: a) providing a substrate of a selected material; b) selecting one or more source materials for composing an ion compound including one or more atoms of a dopant element and one or more atoms of one or more complementary elements, the dopant element and the complementary elements each having a solid solubility limit in said substrate material, where in the one or more complementary elements are one or more different elements selected from the group of elements consisting of silicone, germanium, tin, and lead; c) introducing the selected source materials in a gaseous state into a plasma generating chamber to create the ion compound; d) ionizing the ion compound; e) implanting the ion compound into the substrate to form a doped region, where the atomic concentration level for each of the dopant element and the complementary elements in the substrate does not exceed the corresponding solid solubility limit of the respective element in the substrate material.
Claim 20
Dependent Claim
186 words
A plasma ion implantation method for creating a doped region in a semiconductor device where the semiconductor is formed on a substrate of a selected material, comprising the steps of: a) providing a substrate of a selected material; b) selecting one or more source materials for composing an ion compound including one or more atoms of a dopant element and one or more atoms of one or more complementary elements, the dopant element and the complementary elements each having a solid solubility limit in said substrate material, where in the one or more complementary elements are one or more different elements selected from the group of elements consisting of silicone, germanium, tin, and lead; c) introducing the selected source materials in a gaseous state into a plasma generating chamber to create the ion compound; d) ionizing the ion compound; e) implanting the ion compound into the substrate to form a doped region, where the atomic concentration level for each of the dopant element and the complementary elements in the substrate does not exceed the corresponding solid solubility limit of the respective element in the substrate material.
Claim 21
Dependent Claim
27 words
A method as recited in claim 18 wherein said substrate material is composed of an element selected from the group of elements consisting of silicon, and germanium.
Claim 22
Dependent Claim
13 words
A method as recited in claim 18 wherein said substrate material is diamond.
Claim 23
Dependent Claim
16 words
A method as recited in claim 18 wherein said dopant element is a p-type dopant element.
Claim 24
Dependent Claim
28 words
A method as recited in claim 21 wherein said p-type dopant element is an element selected from the group of elements consisting of boron, aluminum, gallium, and indium.
Claim 25
Dependent Claim
16 words
A method as recited in claim 18 wherein said dopant element is an n-type dopant element.
Claim 26
Dependent Claim
28 words
A method as recited in claim 23 wherein said n-type dopant element is an element selected from the group of elements consisting of nitrogen, phosphorus, antimony, and arsenic.
Claim 27
Dependent Claim
19 words
A method as recited in claim 18 wherein the ion compound further includes one or more atoms of hydrogen.
Claim 28
Dependent Claim
180 words
A method as recited in claim 18 wherein the source materials are one or more materials selected from the group of compounds consisting of SiB 2 , SiB 4 , SiB 6 , B x H y , (C u H v O w ) x B y , Si x H y , Si x C y H z , Si v C x H y O z , (C m H n ) x Si y (O u C v H w ) z , Si w C x H y B z , Si v C w H x O y B z , Si w H x N y B z , Si v C w H x N y B z , Ge w B x C y H z , Ge x B y , Ge x H y , Ge x C y H z , Ge v C x H y O z , and (C m H n ) x Ge y (O u C v H w ) z .
Claim 29
Dependent Claim
16 words
A method as recited in claim 26 wherein said dopant element is a p-type dopant element.
Claim 30
Dependent Claim
28 words
A method as recited in claim 27 wherein said p-type dopant element is an element selected from the group of elements consisting of boron, aluminum, gallium, and indium.
Claim 31
Dependent Claim
16 words
A method as recited in claim 28 wherein said dopant element is an n-type dopant element.
Claim 32
Dependent Claim
28 words
A method as recited in claim 29 wherein said n-type dopant element is an element selected from the group of elements consisting of nitrogen, phosphorus, antimony, and arsenic.
Claim 33
Dependent Claim
19 words
A method as recited in claim 30 wherein the ion compound further includes one or more atoms of hydrogen.
Claim 34
Dependent Claim
180 words
A method as recited in claim 31 wherein the source materials are one or more materials selected from the group of compounds consisting of SiB 2 , SiB 4 , SiB 6 , B x H y , (C u H v O w ) x B y , Si x H y , Si x C y H z , Si v C x H y O z , (C m H n ) x Si y (O u C v H w ) z , Si w C x H y B z , Si v C w H x O y B z , Si w H x N y B z , Si v C w H x N y B z , Ge w B x C y H z , Ge x B y , Ge x H y , Ge x C y H z , Ge v C x H y O z , and (C m H n ) x Ge y (O u C v H w ) z .
Claim 35
Dependent Claim
18 words
A method as recited in claim 18 wherein the source materials are BH 3 and SiH 4 .
Claim 36
Dependent Claim
18 words
A method as recited in claim 18 wherein the source materials are BH 3 and GeH 4 .
Claim 37
Dependent Claim
21 words
A method as recited in claim 18 wherein the method is applied to form p-well, n-well, and twin-well on the substrate.
Claim 38
Dependent Claim
19 words
A method as recited in claim 18 wherein the method is applied to adjust threshold voltage of the semiconductor.
Claim 39
Dependent Claim
27 words
A method as recited in claim 18 wherein the method is applied to poly implantation to define poly grain size, sheet resistance, doping level and doping type.
Claim 40
Dependent Claim
18 words
A method as recited in claim 18 wherein the method is applied to form lightly doped drain devices.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2001-06-08 | 2001-12-08 | 2002-06-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-06-08 | 2005-12-08 | 2006-06-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-06-08 | 2009-12-08 | 2010-06-09 | $7700.00 | Window Closed / Lapsed |