US5489550A
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Gas-phase doping method using germanium-containing additive
Assignee: Texas Instruments Inc
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Filing: 1994-08-09
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Granted: 1996-02-06
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Expires: 2014-08-09
Abstract
Abstract A germanium-containing compound may be used as an additive to dopant source gas to improve the direct GPD (Gas-Phase Doping) processes. This invention involves a gas-phase doping method for semiconductor wafers, including the steps of providing a semiconductor wafer, and exposing the surface of the wafer to a process medium comprising a dopant gas in order to dope the surface of the wafer, wherein the process medium also comprises a germanium-containing compound gas. Preferably, the process medium also comprises a carrier gas, where the carrier gas is hydrogen. The germanium-containing gas can be germane, digermane, or other suitable germanium-containing compound. The wafer and dopant gas may also be exposed to a plasma source, and the wafer may be heated in a rapid thermal processing reactor. Some advantages over conventional GPD processes include faster desorption of byproducts and incorporation of dopant atoms, shallower junctions, shorter cycle times, and lower processing temperatures.
Inventors
- 👤 Mehrdad M. Moslehi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 16:03
CPC Classifications
C; C30; C30B; C30B31/00; C30B31/06; H; H10; H10P; H10P32/00; H10P32/10; H10P32/12; H10P32/1204; H10P32/17; H10P32/171; Y; Y10; Y10S; Y10S148/00; Y10S148/058
Claims Analysis
Total Claims: 37
Claim 1
Independent Claim
46 words
A method for doping semiconductor wafers, comprising the steps of: providing a semiconductor water having a surface; and gas-phase doping said surface of said wafer with a dopant source gas and a doping-assisting germanium-containing compound gas, and wherein said dopant source gas comprises a dopant species.
Claim 2
Independent Claim
46 words
A method for doping semiconductor wafers, comprising the steps of: providing a semiconductor water having a surface; and gas-phase doping said surface of said wafer with a dopant source gas and a doping-assisting germanium-containing compound gas, and wherein said dopant source gas comprises a dopant species.
Claim 3
Dependent Claim
13 words
The method of claim 1 wherein said gas-phase doping includes a carrier gas.
Claim 4
Dependent Claim
11 words
The method of claim 2 wherein said carrier gas is hydrogen.
Claim 5
Dependent Claim
71 words
The method of claim 1 wherein said germanium-containing compound is a material selected from the group consisting of GeH 4 , Ge 2 H 6 , Ge 3 H 3 , GeH 3 Br, GeH 3 C1, GeF 3 Cl, GeH 2 Br 2 , GeH 2 Cl 2 , GeCl 2 F 2 , GeHCl 3 , GeCl 3 F, GeCl 4 , GeBr 4 , and GeHBr 3 .
Claim 6
Dependent Claim
12 words
The method of claim 4 wherein said germanium-containing compound gas is germane.
Claim 7
Dependent Claim
22 words
The method of claim 5 wherein the amount of said germane partial pressure in said process medium is less than 1000 ppm.
Claim 8
Dependent Claim
12 words
The method of claim 4 wherein said germanium-containing compound gas is digermane.
Claim 9
Dependent Claim
22 words
The method of claim 7 wherein the amount of said digermane partial pressure in said process medium is less than 1000 ppm.
Claim 10
Dependent Claim
15 words
The method of claim 1 wherein said method is conducted in a thermal processing reactor.
Claim 11
Dependent Claim
16 words
The method of claim 9 wherein said thermal processing reactor is a rapid thermal processing equipment.
Claim 12
Dependent Claim
47 words
The method of claim 1 and further comprising, after said gas-phase doping step, the steps of: providing a rapid thermal heating cycle using a heating lamp; utilizing said rapid thermal heating cycle to diffuse said dopant species into said wafer, whereby a shallow doped region is provided.
Claim 13
Dependent Claim
23 words
The method of claim 11 wherein said rapid thermal heating cycle heats the wafer to a temperature between 650° C. and 1150° C.
Claim 14
Dependent Claim
25 words
The method of claim 1 wherein said gas-phase doping step is performed after an in-situ semiconductor surface cleaning process, thereby removing the surface native oxide.
Claim 15
Dependent Claim
108 words
The method of claim 1 wherein said dopant source gas is a material selected from the group consisting of B 2 H 6 , BCl 3 , (CH 3 ) 3 B, (C 2 H 5 ) 3 B, (OCH 3 ) 3 B, [(CH 3 ) 2 N ] 2 BF, (C 3 S) 2 BCH 3 , C 6 H 5 BF 2 , (Ch 3 ) 2 BN (CH 3 ) 2 , (CH 3 ) 2 BOCH 3 , and CH 3 SB (CH 3 ) 2 in order to dope said semiconductor wafer with p type doping, wherein said dopant species is boron.
Claim 16
Dependent Claim
128 words
The method of claim 1 wherein said dopant source gas is a material selected from the group consisting of PH 3 , PBr 3 , PCl 3 , PCl 2 F 3 , PF 5 , PF 3 , (CF 3 ) 2 PH, (CF 3 ) 2 PCl, (CF 3 ) 2 PCN, (CF 3 ) 2 PI, CF 3 PCL 2 , (C 2 H 5 ) 2 PH, (CH 3 ) 2 PH, C 2 H 5 PH 2 , CH 3 PH 2 , (C 2 H 5 ) 3 P, CF 3 PH 2 , (CH 3 ) 3 P, and (CF 3 ) 3 P in order to dope said semiconductor wafer with n type doping, wherein said dopant species is phosphorus.
Claim 17
Dependent Claim
123 words
The method of claim 1 wherein said dopant source gas is a material selected from the group consisting of AsH 3 B, AsBr 3 B, AsCl 3 B, AsF 5 , (CF 3 ) 3 As, (C 2 F 5 ) 3 As, (CH 3 ) 3 AS, CF 3 AsH 2 , C 2 H 5 ) 3 As, CH 3 AsH 2 , C 2 H 5 AsH 2 , (CH 3 ) 2 AsH, CH 3 AsF 2 , C 2 H 5 AsF 2 , (C 2 H 5 ) 2 AsH, CF 3 AsCl 2 , and CF 3 AsBr 2 in order to dope said semiconductor wafer with n type doping, wherein said dopant species is arsenic.
Claim 18
Independent Claim
61 words
A method for doping semiconductors wafers, comprising the steps of: providing a semiconductors wafer having a surface; gas-phase doping said surface of said wafer with a doping-assisting germanium-containing compound gas and a dopant source gas, wherein said dopant source gas comprises a dopant species; and exposing said wafer, said germanium-containing compound gas and said dopant source gas to a plasma source.
Claim 19
Independent Claim
61 words
A method for doping semiconductors wafers, comprising the steps of: providing a semiconductors wafer having a surface; gas-phase doping said surface of said wafer with a doping-assisting germanium-containing compound gas and a dopant source gas, wherein said dopant source gas comprises a dopant species; and exposing said wafer, said germanium-containing compound gas and said dopant source gas to a plasma source.
Claim 20
Dependent Claim
13 words
The method of claim 17 wherein said gas-phrase doping includes a carries gas.
Claim 21
Dependent Claim
11 words
The method of claim 18 wherein said carrier gas is hydrogen.
Claim 22
Dependent Claim
71 words
The method of claim 17 wherein said germanium-containing compound is a material selected from the group consisting of GeH 4 , Ge 2 H 6 , Ge 3 H 3 , GeH 3 Br, GeH 3 Cl, GeF 3 Cl, GeH 2 Br 2 , GeH 2 Cl 2 , GeCl 2 F 2 , GeHCl 3 , GeCl 3 F, GeCl 4 , GeBr 4 , and GeHBr 3 .
Claim 23
Dependent Claim
12 words
The method of claim 20 wherein said germanium-containing compound gas is germane.
Claim 24
Dependent Claim
23 words
The method of claim 21 wherein the amount of said germane partial pressure in said germanium-containing compound gas is less than 1000 ppm.
Claim 25
Dependent Claim
12 words
The method of claim 17 wherein said germanium-containing compound gas is digermane.
Claim 26
Dependent Claim
23 words
The method of claim 23 wherein the amount of said digermane partial pressure in said germanium-containing compound gas is less than 1000 ppm.
Claim 27
Dependent Claim
50 words
The method of claim 17 further comprising, after said exposing to a plasma source step, the steps of: providing a rapid thermal heating cycle using a heating lamp; and utilizing said rapid thermal heating cycle to diffuse said dopant species into said wafer, whereby a shallow, doped region is provided.
Claim 28
Dependent Claim
50 words
The method of claim 17 further comprising, during said exposing to a plasma source step, the steps of: providing a rapid thermal heating cycle using a heating lamp; and utilizing said rapid thermal heating cycle to diffuse said dopant species into said wafer, whereby a shallow, doped region is provided.
Claim 29
Independent Claim
60 words
A method for doping semiconductor wafers, comprising the steps of: providing a semiconductor wafer having a surface; gas-phrase doping said surface of said wafer with a doping-assisting germanium-containing compound gas and a dopant source gas; exposing said wafer, said germanium-containing compound gas and said dopant source gas to a plasma source; and heating said wafer in a thermal processing equipment.
Claim 30
Independent Claim
60 words
A method for doping semiconductor wafers, comprising the steps of: providing a semiconductor wafer having a surface; gas-phrase doping said surface of said wafer with a doping-assisting germanium-containing compound gas and a dopant source gas; exposing said wafer, said germanium-containing compound gas and said dopant source gas to a plasma source; and heating said wafer in a thermal processing equipment.
Claim 31
Dependent Claim
13 words
The method of claim 27 wherein said gas-phase doping includes a carrier gas.
Claim 32
Dependent Claim
11 words
The method of claim 28 wherein said carrier gas is hydrogen.
Claim 33
Dependent Claim
72 words
The method of claim 27 wherein said germanium-containing compound gas is a material selected from the group consisting of GeH 4 , Ge 2 H 6 , Ge 3 H 3 , GeH 3 Br, GeH 3 Cl, GeF 3 Cl, GeH 2 Br 2 , GeH 2 Cl 2 , GeCl 2 F 2 , GeHCl 3 , GeCl 3 F, GeCl 4 , GeBr 4 , and GeHBr 3 .
Claim 34
Dependent Claim
12 words
The method of claim 30 wherein said germanium-containing compound gas is germane.
Claim 35
Dependent Claim
23 words
The method of claim 31 wherein the amount of said germane partial pressure in said germanium-containing compound gas is less than 1000 ppm.
Claim 36
Dependent Claim
12 words
The method of claim 30 wherein said germanium-containing compound gas is digermane.
Claim 37
Dependent Claim
23 words
The method of claim 33 wherein the amount of said digermane partial pressure in said germanium-containing compound gas is less than 1000 ppm.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1999-02-05 | 1999-08-07 | 2000-02-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-02-05 | 2003-08-07 | 2004-02-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-02-05 | 2007-08-07 | 2008-02-06 | $7700.00 | Window Closed / Lapsed |