US5354696A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing a semiconductor device with a heterojunction by implantation with carbon-halogen compound
Assignee: US Philips Corp
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Filing: 1993-07-22
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Granted: 1994-10-11
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Expires: 2013-07-22
Abstract
Abstract A method of manufacturing a semiconductor device in which a surface zone (3) adjoining a surface (2) is formed in a silicon semiconductor body (1) by local application of carbon and dopant atoms, the carbon atoms being provided by means of implantation (4). Halogen atoms are provided simultaneously with the carbon atoms by means of an implantation with ions of a carbon-halogen compound, after which a heat treatment is carried out such that non-bonded halogen atoms are removed from the surface zone (3). Such a method is suitable for making a surface zone (3) which has a greater bandgap than silicon. The surface (3) is suitable, for example, for making an emitter region of a heterojunction bipolar transistor (HBT).
Inventors
- 👤 Doeke Oostra
- 👤 Jozef J. M. Ottenheim
- 👤 Jarig Politiek
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 19:18
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10D; H10D10/00; H10D10/01; H10D10/021; H10D10/80; H10D10/821; H10D10/861; H10P30/208; H10P30/225
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
75 words
A method of manufacturing a semiconductor device wherein a surface zone is formed adjoining a surface of a silicon semiconductor body by locally providing carbon and dopant atoms, the carbon atoms being provided through implantation, characterized in that halogen atoms are provided simultaneously with the carbon atoms by means of an implantation with ions of a carbon-halogen compound, after which a heat treatment is carried out to remove non-bonded halogen atoms from the surface zone.
Claim 2
Independent Claim
75 words
A method of manufacturing a semiconductor device wherein a surface zone is formed adjoining a surface of a silicon semiconductor body by locally providing carbon and dopant atoms, the carbon atoms being provided through implantation, characterized in that halogen atoms are provided simultaneously with the carbon atoms by means of an implantation with ions of a carbon-halogen compound, after which a heat treatment is carried out to remove non-bonded halogen atoms from the surface zone.
Claim 3
Dependent Claim
16 words
A method as claimed in claim 1, characterized in that fluorine is used as the halogen.
Claim 4
Dependent Claim
22 words
A method as claimed in claim 2, characterized in that CF 3 + ions are used as ions of the carbon-halogen compound.
Claim 5
Dependent Claim
30 words
A method as claimed in claim 1, characterized in that the implantation of the carbon-halogen compound ions takes place to a depth of less than 0.15 μm below the surface.
Claim 6
Dependent Claim
23 words
A method as claimed in claim 1, characterized in that the temperature is chosen to be above 800° C. during the heat treatment.
Claim 7
Dependent Claim
31 words
A method as claimed in claim 1, characterized in that the heat treatment for the removal of the non-bonded halogen atoms is also used for diffusing or activating the dopant atoms.
Claim 8
Dependent Claim
24 words
A method as claimed in claim 1, characterized in that the dopant atoms are provided after the implantation with ions of the carbon-halogen compound.
Claim 9
Dependent Claim
50 words
A method as claimed in claim 1, characterized in that fewer carbon and halogen atoms are provided in a region of the surface zone adjoining the surface of the semiconductor body than deeper in the surface zone, and a metal layer is provided on the surface after the heat treatment.
References Cited (Backward Citations)
US4559696A
Cited
JPS6197818A
Cited
US4992839A
Cited
EP0390522A2
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US5137839A
Cited
US5158897A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-10-10 | 1998-04-11 | 1998-10-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-10-10 | 2002-04-11 | 2002-10-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-10-10 | 2006-04-11 | 2006-10-11 | $7700.00 | Window Closed / Lapsed |