Formation of deposited film

Abstract

Abstract PURPOSE:To contrive the improvement in the characteristics of the formed films, a film forming velocity, and reproductivity and the uniformity of quality of the films by introducing a germanium compound and the active species which is produced by decomposition of a compound including silicon and halogen and carries out a chemi cally mutual action with the germanium compound into a film forming space separately and irradiating those with a light energy to excite said germanium compound and to cause a reaction. CONSTITUTION:When an intermediate layer 12 is formed, even the formation of a photosensitive layer 13 is effected continuously. In this case, as the materials of the intermediate layer 12, an active seed produced in a decomposition space, a germanium compound in gas state, and if necessary, a silicon compound, hydrogen, a halogen compound, an inert gas, a carbon compound, a gas of a compound including impurity elements as a component and etc. are introduced separately into a film forming space where a base 11 is arranged. Then by using a light energy, the intermediate layer 12 is formed on the base 11. The compound including carbon and halogen which is introduced into a decomposition space and produces an active species when forming the intermediate layer 12 produces an active species such as CF2* for example, easily at high temperature.

Inventors

• 👤 Shunichi Ishihara
• 👤 俊一 石原
• 👤 Masaaki Hirooka
• 👤 広岡　政昭
• 👤 Shigeru Ono
• 👤 茂 大野

Bibliographic Details