EP0390522A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Bipolar transistor and photoelectric conversion apparatus using the same
Assignee: Canon Inc
•
Filing: 1990-03-28
•
Granted: —
•
Expires: 2010-03-28
Abstract
Abstract A semiconductor device comprises an emitter of first conductivity type, a base of second conductivity type, and a collector of first conductivity type. At least a vicinity of an interface of the emitter to base junction is formed by Si. Polycrystalline or single crystalline Si 1-x C x (x ≦ 0.5) is formed on a region formed by the Si of said emitter. A junction between a region of the Si and a region of the polycrystalline and the single crystalline Si 1-x C x is a graded hetero junction.
Inventors
- 👤 Masakazu Morishita
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-04 20:37
CPC Classifications
H; H10; H10D; H10D10/00; H10D10/01; H10D10/021; H10D10/80; H10D10/821; H10D10/861; H10D62/00; H10D62/60; H10D62/80; H10D62/82; H10D62/822; H10D62/83; H10D62/832; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/24; H10F30/245; H10F39/00; H10F39/10; H10F39/12; H10F39/197
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
92 words
A semiconductor device comprising an emitter of first conductivity type, a base of second conductivity type, and a collector of first conductivity type, wherein at least a vicinity of an interface of the emitter to base junction is formed by Si, polycrystalline or single crystalline Si 1-x C x (x ≦ 0.5) is formed on a region formed by the Si of said emitter, and a junction between a region of the Si and a region of the polycrystalline and the single crystalline Si 1-x C x is a graded hetero junction.
Claim 2
Dependent Claim
92 words
A semiconductor device comprising an emitter of first conductivity type, a base of second conductivity type, and a collector of first conductivity type, wherein at least a vicinity of an interface of the emitter to base junction is formed by Si, polycrystalline or single crystalline Si 1-x C x (x ≦ 0.5) is formed on a region formed by the Si of said emitter, and a junction between a region of the Si and a region of the polycrystalline and the single crystalline Si 1-x C x is a graded hetero junction.
Claim 3
Dependent Claim
21 words
A semiconductor device according to Claim 1, wherein said region of Si 1-x C x is formed by an ion injection.
Claim 4
Dependent Claim
26 words
A semiconductor device according to Claim 1, wherein on said region of Si 1-x C x of said emitter, a high concentration impurity layer is provided.
Claim 5
Dependent Claim
23 words
A semiconductor device according to Claim 3, wherein said high impurity concentration layer is formed by Si 1-x C x (x > 0.0125).
Claim 6
Dependent Claim
27 words
A semiconductor device according to Claim 1, wherein said region of the Si 1-x C x of the emitter wherein 0.0125 ≦ x ≦ 0.075 is provided.
Claim 7
Dependent Claim
12 words
A photoelectric conversion apparatus using a semiconductor device according to Claim 1.
Claim 8
Dependent Claim
122 words
A semiconductor device comprising an emitter of first conductivity type, a base of second conductivity type, and a collector of first conductivity type, wherein at least a vicinity of an interface of emitter to base junction is formed by Si, polycrystalline or single crystalline Si 1-x C x (x ≦ 0.5) is formed on a region of Si within said emitter, a junction between the region of Si and the region of polycrystalline or single crystalline Si 1-x C x is a graded hetero junction, at least a portion under the region of Si within said emitter is formed by a single crystalline Si doped with B and Ge, and a concentration of B is no less than 1 x 10¹⁸ cm⁻³.
Claim 9
Dependent Claim
122 words
A semiconductor device comprising an emitter of first conductivity type, a base of second conductivity type, and a collector of first conductivity type, wherein at least a vicinity of an interface of emitter to base junction is formed by Si, polycrystalline or single crystalline Si 1-x C x (x ≦ 0.5) is formed on a region of Si within said emitter, a junction between the region of Si and the region of polycrystalline or single crystalline Si 1-x C x is a graded hetero junction, at least a portion under the region of Si within said emitter is formed by a single crystalline Si doped with B and Ge, and a concentration of B is no less than 1 x 10¹⁸ cm⁻³.
Claim 10
Dependent Claim
20 words
A device according to Claim 7, wherein said region of Si 1-x C x is formed by an ion injection.
Claim 11
Dependent Claim
20 words
A device according to Claim 7, wherein said Si 1-x C x wherein 0.0125 ≦ x ≦ 0.075 is provided.
Claim 12
Dependent Claim
18 words
A device according to Claim 7, wherein said B and Ge are doped by an ion implantation process.
Claim 13
Dependent Claim
21 words
A device according to Claim 7, wherein an impurity concentration of said emitter region is less than 1 x 10¹⁹ cm⁻³.
Claim 14
Dependent Claim
38 words
A device according to Claim 7, wherein the polycrystalline or single crystalline Si is doped with B and Ge so that N Ge > 8.25N B wherein N B and N Ge are respectively B and Ge concentrations.
Claim 15
Dependent Claim
12 words
A photoelectric conversion apparatus using a semiconductor device according to Claim 7.
Claim 16
Dependent Claim
135 words
A semiconductor device comprising an emitter of first conductivity type, a base of second conductivity type, and a collector of first conductivity type, wherein at least a portion of the emitter side at an emitter-base junction interface is formed by Si, a polycrystalline or a single crystalline Si 1-x C x (x ≦ 0.5) is formed on a region formed by the Si of the emitter, at least a portion under the region formed by the Si of emitter is formed by Si 1-y Ge y (0 < y < 1), at least one of a junction between the region of Si and the region of polycrystalline or single crystalline Si 1-x C x and a junction between the region of Si and the region of Si 1-y Ge y is a graded hetero junction.
Claim 17
Dependent Claim
135 words
A semiconductor device comprising an emitter of first conductivity type, a base of second conductivity type, and a collector of first conductivity type, wherein at least a portion of the emitter side at an emitter-base junction interface is formed by Si, a polycrystalline or a single crystalline Si 1-x C x (x ≦ 0.5) is formed on a region formed by the Si of the emitter, at least a portion under the region formed by the Si of emitter is formed by Si 1-y Ge y (0 < y < 1), at least one of a junction between the region of Si and the region of polycrystalline or single crystalline Si 1-x C x and a junction between the region of Si and the region of Si 1-y Ge y is a graded hetero junction.
Claim 18
Dependent Claim
34 words
A semiconductor device according to Claim 14, wherein at least one of the region of Si 1-x C x and the region of Si 1-y Ge y is formed by an ion implantation process.
Claim 19
Dependent Claim
26 words
A semiconductor device according to Claim 14 or 15, wherein a ratio X of C in Si 1-x C x is 0.0125 ≦ x ≦ 0.075.
Claim 20
Dependent Claim
24 words
A semiconductor device according to Claim 14, wherein a ratio y of Ge in Si 1-y Ge y is 0.0625 ≦ y ≦ 0.375.
Claim 21
Dependent Claim
27 words
A semiconductor device according to Claim 14, wherein the region of Si 1-y Ge y is selectively formed only under the region of Si within the emitter.
Claim 22
Dependent Claim
12 words
A photoelectric conversion apparatus using a semiconductor device according to Claim 14.
Claim 23
Dependent Claim
55 words
A semiconductor device comprising an emitter of first conductivity type, a base of second conductivity type, and a collector of first conductivity type, wherein at least a region of an interface of the emitter to base junction is formed of Si, with polycrystalline or single crystalline Si 1-x C x (x ≦ 0.5) formed thereon.
Claim 24
Dependent Claim
55 words
A semiconductor device comprising an emitter of first conductivity type, a base of second conductivity type, and a collector of first conductivity type, wherein at least a region of an interface of the emitter to base junction is formed of Si, with polycrystalline or single crystalline Si 1-x C x (x ≦ 0.5) formed thereon.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.