US4992839A
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Field effect thin film transistor having a semiconductor layer formed from a polycrystal silicon film containing hydrogen atom and halogen atom and process for the preparation of the same
Abstract An improved field effect thin film transistor characterized in that the semiconductor layer being formed from a polycrystal silicon film: said layer containing at least hydrogen atom and fluorine atom except silicon atom layer: and the concentration of said hydrogen atom or said fluorine atom being distributed in the thickness direction in the state that it being relatively thick in a layer region in the side of the substrate and relatively thin in a layer resion in the opposite side. A process for preparing the above field effect thin film transistor, characterized in that the semiconductor layer is formed by: (a) providing a gaseous active species A generated from a compound (i) containing silicon atom and halogen atom by subjecting said compound (i) to the action of an activation energy in an active species A generation chamber and a gaseous active species B generated from a compound (ii) containing at least hydrogen atom by subjecting said compound (ii) to the action of an activation energy in an active species B generation space; (b) introducing said active species A, said active species B and one or more of H2 gas and F2 gas into a film forming space having a substrate being maintained with a desired temperature; and (c) applying an excitation light energy into said film forming space to thereby cause chemical reactions among materials resulting in forming a polycrystal silicon film to be the semiconductor layer.
A field effect thin film transistor comprising a substrate, a gate electrode, an insulating layer, a semiconductor layer, first and second n + type layers being disposed on said semiconductor layer, a source electrode being disposed on said first n + type layer and a drain electrode being disposed on said second n + type layer, characterized in that said semiconductor layer is formed from a polycrystal silicon film with a localized state density of 10 17 cm -3 ev -1 or less which contains silicon atoms as the matrix, hydrogen atoms at a concentration of 0.1 atomic ratio or less and fluorine atoms at a concentration of 0.05 atomic ratio or less, said concentration of at least one of said hydrogen atoms and said fluorine atoms being enhanced in a region of said semiconductor layer adjacent to said substrate and being reduced in a region of said semiconductor layer on the side opposite the substrate side.
Claim 2
Dependent Claim
157 words
A field effect thin film transistor comprising a substrate, a gate electrode, an insulating layer, a semiconductor layer, first and second n + type layers being disposed on said semiconductor layer, a source electrode being disposed on said first n + type layer and a drain electrode being disposed on said second n + type layer, characterized in that said semiconductor layer is formed from a polycrystal silicon film with a localized state density of 10 17 cm -3 ev -1 or less which contains silicon atoms as the matrix, hydrogen atoms at a concentration of 0.1 atomic ratio or less and fluorine atoms at a concentration of 0.05 atomic ratio or less, said concentration of at least one of said hydrogen atoms and said fluorine atoms being enhanced in a region of said semiconductor layer adjacent to said substrate and being reduced in a region of said semiconductor layer on the side opposite the substrate side.