Formation of silicon thin film

Abstract

Abstract PURPOSE:To obtain a silicon thin film doped with high-quality fluorine on a substrate, by introducing silicon vapor prepared by a specific method into an elec- trical discharge plasma together with fluorine gas and impurity-doping gas which are introduced into the plasma separately from the silicon vapor. CONSTITUTION:A silicon block 6 is charged in the electron beam generation chamber 3 of a high-frequency reactive ion plating apparatus, and a substrate 8 for depositing the thin film is placed in the reaction chamber 1. The silicon black 6 is evaporated with electron beam, and the obtained silicon vapor 18 is released into the electrical discharge plasma generated by the high-frequency coil 10 together with the fluorine gas and the impurity-doping gas introduced into the plasma through the gas-inlet pipe 5, and made to react with each other to form a silicon thin film doped with fluorine on the substrate 8. The high decomposability of the fluorine gas and that of the hydrogenated product owing to the affinity of fluorine to hydrogen can be achieved by the use of fluorine gas, and a high-quality doped silicon thin film can be produced.

Inventors

• 👤 Kesao Noguchi
• 👤 野口　今朝男

Bibliographic Details