US5508208A
Expired / Lapsed
US
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Method of manufacturing diamond semiconductor
Assignee: Sony Corp
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Filing: 1994-09-27
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Granted: 1996-04-16
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Expires: 2014-09-27
Abstract
Abstract In a method of manufacturing diamond semiconductor mainly composed of carbon, a technique is provided which is free from the possibility of destruction of diamond structure, permits n-type doping into diamond and further permits high concentration n-type doping. In this method of diamond semiconductor manufacture, lithium atoms (which may be produced from a nitrogen compound of lithium, for instance lithium azide) is doped using ECR plasma into diamond 102 with the surface thereof having been cleaned, if necessary.
Inventors
- 👤 Junichi Sato
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 23:38
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/83; H10D62/8303; H10P; H10P95/00; H10P95/92
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
89 words
A method of making an n-doped diffusion layer in a diamond semiconductor device comprising the steps of: providing a substrate including a diamond semiconductor film thereon and an etched insulating film on said diamond semiconductor film defining exposed portions; and doping the exposed portions with lithium to form a diffusion layer by placing the substrate in a reaction chamber and exposing the substrate to a high density ECR plasma having a plasma density of 1×10 12 cm -3 or more formed from a gas of nitrogen compound of lithium.
Claim 2
Independent Claim
89 words
A method of making an n-doped diffusion layer in a diamond semiconductor device comprising the steps of: providing a substrate including a diamond semiconductor film thereon and an etched insulating film on said diamond semiconductor film defining exposed portions; and doping the exposed portions with lithium to form a diffusion layer by placing the substrate in a reaction chamber and exposing the substrate to a high density ECR plasma having a plasma density of 1×10 12 cm -3 or more formed from a gas of nitrogen compound of lithium.
Claim 3
Dependent Claim
21 words
The method of manufacturing a diamond semiconductor device according to claim 1, wherein the ECR plasma is produced by pulse microwave.
Claim 4
Dependent Claim
26 words
The method of manufacturing a diamond semiconductor device according to claim 1, wherein the surface of the diamond semiconductor layer is dry cleaned before the doping.
Claim 5
Dependent Claim
23 words
The method of manufacturing a diamond semiconductor device according to claim 3, wherein the dry cleaning is carried out by using ECR plasma.
Claim 6
Dependent Claim
26 words
The method of manufacturing a diamond semiconductor device according to claim 3, wherein the dry cleaning is carried out by using N 2 O etching gas.
Claim 7
Dependent Claim
27 words
The method of manufacturing a diamond semiconductor device according to claim 3, wherein the dry cleaning and the doping are carried out in the same plasma apparatus.
Claim 8
Dependent Claim
21 words
The method of manufacturing a diamond semiconductor device according to claim 1, wherein the nitrogen compound of lithium is lithium azide.
Claim 9
Dependent Claim
40 words
A method as defined in claim 1, wherein in said doping step, the substrate is exposed to a high density ECR plasma at a pressure of about 1.33 Pa and a temperature of about 100° C. to about 150° C.
Claim 10
Dependent Claim
33 words
A method as defined in claim 7, wherein said lithium azide gas is pre-heated to about 120° C. and is introduced to said reaction chamber at a flow rate of about 30 SCCM.
Claim 11
Dependent Claim
41 words
A method as defined in claim 1, wherein said high density ECR plasma has a plasma density of 1×10 14 cm -3 and is produced by pulsed microwave at a microwave of about 850 W and a pulse ratio of 1:2.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-04-16 | 1999-10-16 | 2000-04-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-04-16 | 2003-10-16 | 2004-04-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-04-16 | 2007-10-16 | 2008-04-16 | $7700.00 | Window Closed / Lapsed |