EP0543392A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Diamond semiconductor device and method of producing the same
Assignee: Canon Inc
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Filing: 1992-11-20
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Granted: —
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Expires: 2012-11-20
Abstract
Abstract A diamond semiconductor device has a diamond semiconductor with a pn junction formed by vapor phase synthesis process. The device has a p-type semiconductor portion containing boron as an impurity, and an n-type semiconductor portion containing lithium as an impurity. This semiconductor device is produced by vapor phase synthesis having the steps of introducing boron as an impurity into the p-type semiconductor portion, and introducing lithium as an impurity into said n-type semiconductor portion.
Inventors
- 👤 Keiji Hirabayashi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-04 04:51
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/826; H10H20/8262; H10D; H10D62/00; H10D62/80; H10D62/83; H10D62/834; H10H20/01; H10H20/011; H10H20/014; H10H20/052; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/27; H10P14/271; H10P14/274; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2921; H10P14/2922; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3406; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; H10P14/3446; H10P14/3451; H10P14/3452; H10P14/3456; H10D62/8303
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
38 words
A diamond semiconductor device having a diamond semiconductor with a pn junction formed by vapor phase synthesis process, comprising: a p-type semiconductor portion containing boron as an impurity; and an n-type semiconductor portion containing lithium as an impurity.
Claim 2
Dependent Claim
37 words
A diamond semiconductor device according to Claim 1, wherein said diamond semiconductor is formed by a diamond crystal grown on a single nucleus on a predetermined location on an insulating substrate, and functions as a luminescence layer.
Claim 3
Dependent Claim
43 words
A diamond semiconductor device according to Claim 2, further comprising a Schottky junction electrode and an ohmic junction electrode separately formed on said diamond crystal, and means for applying a forward voltage between said electrodes, whereby electroluminescence takes place in said diamond crystal.
Claim 4
Dependent Claim
51 words
A diamond semiconductor device according to Claim 2, further comprising an insulating layer formed on said diamond crystal, a Schottky junction electrode and an ohmic junction electrode separately formed on said insulating layer, and means for applying a forward voltage between said electrodes, whereby electroluminescence takes place in said diamond crystal.
Claim 5
Independent Claim
41 words
A method of producing a diamond semiconductor device having a pn junction by vapor phase synthesis, comprising the steps of: introducing boron as an impurity into the p-type semiconductor portion; and introducing lithium as an impurity into said n-type semiconductor portion.
Claim 6
Dependent Claim
27 words
A method of producing a diamond semiconductor device according to Claim 5, wherein said diamond semiconductor is formed on a single nucleus formed on an insulating substrate.
References Cited (Backward Citations)
No citation records indexed.
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