US5001452A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconducting diamond and process for producing the same
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1988-06-02
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Granted: 1991-03-19
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Expires: 2008-06-02
Abstract
Abstract A semiconducting diamond which contains diamond carbon and at least one dopant element selected from the group consisting of S, Se, and Cl, and a process for producing the same.
Inventors
- 👤 Takahiro Imai
- 👤 Hideaki Nakahata
- 👤 Naoji Fujimori
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 12:06
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/83; H10D62/8303; C; C30; C30B; C30B25/00; C30B25/02; C30B25/10; C30B25/105; C30B29/00; C30B29/02; C30B29/04; H10D62/834; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49082
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
20 words
A semiconducting diamond comprising diamond carbon and at least one dopant selected from the group consisting of S and Se.
Claim 2
Dependent Claim
20 words
A semiconducting diamond comprising diamond carbon and at least one dopant selected from the group consisting of S and Se.
Claim 3
Dependent Claim
28 words
A semiconducting diamond as claimed in claim 1, wherein the concentration of said dopant is from about 1×10 12 to 1×10 21 cm -3 of said semiconducting diamond.
Claim 4
Dependent Claim
27 words
A semiconducting diamond as claimed in claim 2, wherein the concentration of said dopant is from 1×10 15 to 1×10 20 cm -3 of said semiconducting diamond.
Claim 5
Dependent Claim
13 words
A semiconducting diamond as claimed in claim 1, wherein said dopant is S.
Claim 6
Dependent Claim
13 words
A semiconducting diamond as claimed in claim 1, wherein said dopant is Se.
Claim 7
Dependent Claim
16 words
A semiconducting diamond as claimed in claim 1, wherein said semiconducting diamond is an n-type semiconductor.
Claim 8
Dependent Claim
25 words
A semiconducting diamond as claimed in claim 6, wherein said semiconducting diamond has an electrical resistivity of from about 1×10 -2 to 1×10 6 Ωcm.
Claim 9
Dependent Claim
28 words
A semiconducting diamond as claimed in claim 6, wherein said semiconducting diamond has a free electron density of from about 1×10 12 to 1×10 21 cm -3 .
Claim 10
Dependent Claim
27 words
A semiconducting diamond as claimed in claim 6, wherein said semiconducting diamond has an electron mobility of from about 1×10 -1 to 1×10 3 cm 2 /Vsec.
Claim 11
Dependent Claim
62 words
A process for producing a semiconducting diamond comprising the step of injecting an ionized substance comprising a dopant selected from the group consisting of S, Se, and Cl into a carbon diamond matrix to provide a semiconducting diamond doped with said dopant in an amount of from about 1×10 12 to 1×10 17 ions per 1 cm 3 of said semiconducting diamond.
Claim 12
Dependent Claim
62 words
A process for producing a semiconducting diamond comprising the step of injecting an ionized substance comprising a dopant selected from the group consisting of S, Se, and Cl into a carbon diamond matrix to provide a semiconducting diamond doped with said dopant in an amount of from about 1×10 12 to 1×10 17 ions per 1 cm 3 of said semiconducting diamond.
Claim 13
Dependent Claim
63 words
A process for producing a semiconducting diamond comprising the steps of: (a) mixing a gas comprising carbon and at least one gas comprising a dopant selected from S or Se, the molar ratio of said dopant atoms to said carbon atoms being from about 0.001% to 10%; and (b) reacting said mixture to produce a semiconducting diamond comprising diamond carbon and said dopant.
Claim 14
Dependent Claim
63 words
A process for producing a semiconducting diamond comprising the steps of: (a) mixing a gas comprising carbon and at least one gas comprising a dopant selected from S or Se, the molar ratio of said dopant atoms to said carbon atoms being from about 0.001% to 10%; and (b) reacting said mixture to produce a semiconducting diamond comprising diamond carbon and said dopant.
Claim 15
Dependent Claim
19 words
A process as claimed in claim 11, wherein said mixture is reacted by a metastable vapor phase deposition reaction.
Claim 16
Dependent Claim
56 words
A process for producing a semiconducting diamond comprising the steps of: (a) mixing a diamond powder and at least one substance comprising a dopant selected from the group consisting of S, Se, and Cl; and (b) reacting said mixture at a temperature and pressure sufficient to provide a semiconducting diamond comprising diamond carbon and said dopant.
Claim 17
Dependent Claim
56 words
A process for producing a semiconducting diamond comprising the steps of: (a) mixing a diamond powder and at least one substance comprising a dopant selected from the group consisting of S, Se, and Cl; and (b) reacting said mixture at a temperature and pressure sufficient to provide a semiconducting diamond comprising diamond carbon and said dopant.
References Cited (Backward Citations)
US4484212A
Cited
US4806900A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-03-18 | 1994-09-17 | 1995-03-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-03-18 | 1998-09-17 | 1999-03-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-03-18 | 2002-09-17 | 2003-03-19 | $7700.00 | Window Closed / Lapsed |