US5250149A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of growing thin film
Assignee: Sumitomo Electric Industries Ltd
•
Filing: 1991-03-06
•
Granted: 1993-10-05
•
Expires: 2011-03-06
Abstract
Abstract A heating process for producing a high quality diamond or c-BN film on a diamond or c-BN substrate comprising placing a diamond or c-BN substrate in vacuum, elevating the temperature and treating its surface with a chlorine containing gas, a fluorine containing gas, a nitrogen containing plasma or a hydrogen containing plasma. The treatment gas is then removed and feed gases are introduced which are suitable for growing a thin diamond or c-BN film on the surface substrate under chemical vapor deposition conditions.
Inventors
- 👤 Tsunenobu Kimoto
- 👤 Tadashi Tomikawa
- 👤 Nobuhiko Fujita
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 15:32
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C23; C23C; C23C16/00; C23C16/02; C23C16/0227; C23C16/0236; C23C16/0245; C23C16/22; C23C16/26; C23C16/27; C23C16/274; C23C16/278; C23C16/30; C23C16/34; C23C16/342; C30B29/00; C30B29/02; C30B29/04; C30B29/10; C30B29/40; C30B29/403
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
98 words
A method for growing a thin epitaxial film selected from a diamond film and a c-BN film, on a substrate selected from diamond and c-BN, by vapor phase synthesis comprising the steps of: (a) placing the substrate in a vacuum chamber (b) heating the substrate to a temperature in the range 500° to 1200° C.; (c) treating the substrate with a gaseous mixture selected from a chlorine containing gaseous mixture and a fluorine containing gaseous mixture; (d) evacuating the gaseous mixture; (e) epitaxially growing the thin epitaxial film by introducing a feed gas under chemical vapor deposition conditions.
Claim 2
Independent Claim
98 words
A method for growing a thin epitaxial film selected from a diamond film and a c-BN film, on a substrate selected from diamond and c-BN, by vapor phase synthesis comprising the steps of: (a) placing the substrate in a vacuum chamber (b) heating the substrate to a temperature in the range 500° to 1200° C.; (c) treating the substrate with a gaseous mixture selected from a chlorine containing gaseous mixture and a fluorine containing gaseous mixture; (d) evacuating the gaseous mixture; (e) epitaxially growing the thin epitaxial film by introducing a feed gas under chemical vapor deposition conditions.
Claim 3
Dependent Claim
17 words
A method as claimed in claim 1, wherein the gaseous mixture is a chlorine containing gaseous mixture.
Claim 4
Dependent Claim
28 words
A method as claimed in claim 2, wherein the chlorine containing gaseous mixture comprises a chlorine containing compound selected from HCl, CCl 4 , and Cl 2 .
Claim 5
Dependent Claim
17 words
A method as claimed in claim 1, wherein the gaseous mixture is a fluorine containing gaseous mixture.
Claim 6
Dependent Claim
28 words
A method as claimed in claim 4, wherein the fluorine containing gaseous mixture comprises a fluorine containing compound selected from HF, CF 4 , and F 2 .
Claim 7
Dependent Claim
29 words
A method as claimed in claim 1, wherein the feed gas for epitaxially growing the thin layer is selected from a mixture of CH 4 and H 2 .
Claim 8
Dependent Claim
20 words
A method as claimed in claim 1, wherein step (c) takes place at a temperature in the range 800°-1000° C.
Claim 9
Dependent Claim
18 words
A method as claimed in claim 6 wherein the feed gas also comprises B 2 H 6 .
Claim 10
Independent Claim
85 words
A method for growing a thin epitaxial film selected from a diamond film and a c-BN film, on a substrate selected from diamond and c-BN, by vapor phase synthesis comprising the steps of: (a) placing the substrate in a vacuum chamber (b) elevating the temperature of the substrate to a temperature in the range 500°-1200° (c) treating the substrate with a nitrogen plasma; (d) evacuating the gaseous mixture; (e) epitaxially growing the thin epitaxial film by introducing a feed gas under chemical vapor deposition conditions.
Claim 11
Independent Claim
85 words
A method for growing a thin epitaxial film selected from a diamond film and a c-BN film, on a substrate selected from diamond and c-BN, by vapor phase synthesis comprising the steps of: (a) placing the substrate in a vacuum chamber (b) elevating the temperature of the substrate to a temperature in the range 500°-1200° (c) treating the substrate with a nitrogen plasma; (d) evacuating the gaseous mixture; (e) epitaxially growing the thin epitaxial film by introducing a feed gas under chemical vapor deposition conditions.
Claim 12
Dependent Claim
15 words
A process according to claim 9, wherein the plasma inducing microwave power is 200-700 W.
References Cited (Backward Citations)
US3522118A
Cited
US3501336A
Cited
US3714334A
Cited
US4436761A
Cited
GB2128637A
Cited
JPS59137396A
Cited
JPS60186500A
Cited
US4605479A
Cited
US4816286A
Cited
JPS63121667A
Cited
JPS63185894A
Cited
US5015494A
Cited
JPH0193412A
Cited
JPH0196099A
Cited
JPH01191780A
Cited
GB2219578A
Cited
EP0370775A2
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-10-04 | 1997-04-05 | 1997-10-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-10-04 | 2001-04-05 | 2001-10-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-10-04 | 2005-04-05 | 2005-10-05 | $7700.00 | Window Closed / Lapsed |