Patent US5250149A successfully refreshed from Google Patents.
US5250149A
Expired / Lapsed
US
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Method of growing thin film
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1991-03-06
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Granted: 1993-10-05
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Expires: 2011-03-06
Abstract
Abstract A heating process for producing a high quality diamond or c-BN film on a diamond or c-BN substrate comprising placing a diamond or c-BN substrate in vacuum, elevating the temperature and treating its surface with a chlorine containing gas, a fluorine containing gas, a nitrogen containing plasma or a hydrogen containing plasma. The treatment gas is then removed and feed gases are introduced which are suitable for growing a thin diamond or c-BN film on the surface substrate under chemical vapor deposition conditions.
Inventors
- 👤 Tsunenobu Kimoto
- 👤 Tadashi Tomikawa
- 👤 Nobuhiko Fujita
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 18:24
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C23; C23C; C23C16/00; C23C16/02; C23C16/0227; C23C16/0236; C23C16/0245; C23C16/22; C23C16/26; C23C16/27; C23C16/274; C23C16/278; C23C16/30; C23C16/34; C23C16/342; C30B29/00; C30B29/02; C30B29/04; C30B29/10; C30B29/40; C30B29/403
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
98 words
A method for growing a thin epitaxial film selected from a diamond film and a c-BN film, on a substrate selected from diamond and c-BN, by vapor phase synthesis comprising the steps of: (a) placing the substrate in a vacuum chamber (b) heating the substrate to a temperature in the range 500° to 1200° C.; (c) treating the substrate with a gaseous mixture selected from a chlorine containing gaseous mixture and a fluorine containing gaseous mixture; (d) evacuating the gaseous mixture; (e) epitaxially growing the thin epitaxial film by introducing a feed gas under chemical vapor deposition conditions.
Claim 2
Independent Claim
98 words
A method for growing a thin epitaxial film selected from a diamond film and a c-BN film, on a substrate selected from diamond and c-BN, by vapor phase synthesis comprising the steps of: (a) placing the substrate in a vacuum chamber (b) heating the substrate to a temperature in the range 500° to 1200° C.; (c) treating the substrate with a gaseous mixture selected from a chlorine containing gaseous mixture and a fluorine containing gaseous mixture; (d) evacuating the gaseous mixture; (e) epitaxially growing the thin epitaxial film by introducing a feed gas under chemical vapor deposition conditions.
Claim 3
Dependent Claim
17 words
A method as claimed in claim 1, wherein the gaseous mixture is a chlorine containing gaseous mixture.
Claim 4
Dependent Claim
28 words
A method as claimed in claim 2, wherein the chlorine containing gaseous mixture comprises a chlorine containing compound selected from HCl, CCl 4 , and Cl 2 .
Claim 5
Dependent Claim
17 words
A method as claimed in claim 1, wherein the gaseous mixture is a fluorine containing gaseous mixture.
Claim 6
Dependent Claim
28 words
A method as claimed in claim 4, wherein the fluorine containing gaseous mixture comprises a fluorine containing compound selected from HF, CF 4 , and F 2 .
Claim 7
Dependent Claim
29 words
A method as claimed in claim 1, wherein the feed gas for epitaxially growing the thin layer is selected from a mixture of CH 4 and H 2 .
Claim 8
Dependent Claim
20 words
A method as claimed in claim 1, wherein step (c) takes place at a temperature in the range 800°-1000° C.
Claim 9
Dependent Claim
18 words
A method as claimed in claim 6 wherein the feed gas also comprises B 2 H 6 .
Claim 10
Independent Claim
85 words
A method for growing a thin epitaxial film selected from a diamond film and a c-BN film, on a substrate selected from diamond and c-BN, by vapor phase synthesis comprising the steps of: (a) placing the substrate in a vacuum chamber (b) elevating the temperature of the substrate to a temperature in the range 500°-1200° (c) treating the substrate with a nitrogen plasma; (d) evacuating the gaseous mixture; (e) epitaxially growing the thin epitaxial film by introducing a feed gas under chemical vapor deposition conditions.
Claim 11
Independent Claim
85 words
A method for growing a thin epitaxial film selected from a diamond film and a c-BN film, on a substrate selected from diamond and c-BN, by vapor phase synthesis comprising the steps of: (a) placing the substrate in a vacuum chamber (b) elevating the temperature of the substrate to a temperature in the range 500°-1200° (c) treating the substrate with a nitrogen plasma; (d) evacuating the gaseous mixture; (e) epitaxially growing the thin epitaxial film by introducing a feed gas under chemical vapor deposition conditions.
Claim 12
Dependent Claim
15 words
A process according to claim 9, wherein the plasma inducing microwave power is 200-700 W.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-10-04 | 1997-04-05 | 1997-10-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-10-04 | 2001-04-05 | 2001-10-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-10-04 | 2005-04-05 | 2005-10-05 | $7700.00 | Window Closed / Lapsed |