US4436761A
Expired / Lapsed
US
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Method for treatment of metal substrate for growth of hydrogen-containing semiconductor film
Assignee: National Institute of Advanced Industrial Science and Technology
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Filing: 1982-07-26
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Granted: 1984-03-13
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Expires: 2002-07-26
Abstract
Abstract In the deposition of a hydrogen-containing semiconductor film on a metal substrate, the electric contact characteristic between the metal substrate and the semiconductor film is improved by preparatorily exposing to hydrogen plasma the surface of the metal substrate on which the semiconductor film is to be deposited.
Inventors
- 👤 Yutaka Hayashi
- 👤 Mitsuyuki Yamanaka
- 👤 Hideyuki Karasawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 08:41
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; C; C23; C23C; C23C16/00; C23C16/02; C23C16/0227; C23C16/0245; H10F; H10F71/00; H10F71/10; H10F71/103; H10F77/00; H10F77/20; H10P14/29; H10P14/2901; H10P14/2923; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3408; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/3444; H10P14/36; H10P14/3602; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
85 words
A method for the treatment of a cleaned metal substrate for the growth of a hydrogen-containing semiconductor film on said metal substrate which comprises exposing the surface of said cleaned metal substrate on which said semiconductor film is to be deposited to plasma consisting essentially of hydrogen in advance of the deposition thereon of said semiconductor film to cause hydrogen to be adsorbed on the surface of the substrate, thereby improving the electric contact characteristic between the metal substrate and the semiconductor film deposited thereon.
Claim 2
Independent Claim
85 words
A method for the treatment of a cleaned metal substrate for the growth of a hydrogen-containing semiconductor film on said metal substrate which comprises exposing the surface of said cleaned metal substrate on which said semiconductor film is to be deposited to plasma consisting essentially of hydrogen in advance of the deposition thereon of said semiconductor film to cause hydrogen to be adsorbed on the surface of the substrate, thereby improving the electric contact characteristic between the metal substrate and the semiconductor film deposited thereon.
Claim 3
Dependent Claim
36 words
The method according to claim 1, wherein subsequently to the exposure of the surface of the metal substrate to hydrogen plasma, the semiconductor film is deposited in situ on the treated surface of the metal substrate.
Claim 4
Dependent Claim
15 words
The method according to claim 1, wherein the metal substrate is made of stainless steel.
Claim 5
Dependent Claim
21 words
The method according to claim 1, wherein the metal substrate is formed by coating a glass base with a Cr film.
Claim 6
Dependent Claim
15 words
The method according to claim 1, wherein the semiconductor film is an amorphous silicon film.
References Cited (Backward Citations)
US4200473A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-03-13 | 1987-09-12 | 1988-03-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-03-13 | 1991-09-12 | 1992-03-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-03-13 | 1995-09-12 | 1996-03-13 | $7700.00 | Window Closed / Lapsed |