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US5015494A Expired / Lapsed US ⏱️ 0.0 years remaining

Microwave enhanced CVD method for depositing diamond

Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1989-03-28
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Granted: 1991-05-14
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Expires: 2009-03-28
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Abstract

Abstract A cyclotron resonance chemical vapor deposition method of making a diamond or diamond-like material on a substrate characterized by the use of a higher pressure range of 0.1 to 300 torr, where the substrate is approximately positioned where a standing wave of the applied microwave established in a reaction chamber attains a maximum value.

Inventors

  • 👤 Shunpei Yamazaki

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-23 14:48
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/22; C23C14/24; C23C16/00; C23C16/22; C23C16/26; C23C16/27; C23C16/274; C23C16/06; C23C16/278; C23C16/44; C23C16/50; C23C16/511; C30; C30B; C30B25/00; C30B25/02; C30B25/10; C30B25/105; C30B29/00; C30B29/02; C30B29/04; Y; Y10; Y10S; Y10S427/00; Y10S427/103; Y10S427/104; Y10S427/106

Claims Analysis

Total Claims: 11
Claim 1
Independent Claim 137 words
A cyclotron resonance chemical vapor deposition method of forming a diamond or diamond-like carbon material on a substrate comprising: inputting at least one reactive gas comprising carbon into a reaction chamber; emitting a microwave into said reaction chamber at a predetermined frequency and in a predetermined direction; establishing a magnetic field in said reaction chamber where the direction of the magnetic field is substantially parallel to the direction of the microwave and the strength of the magnetic field is such as to cause cyclotron resonance at a predetermined position in the reaction chamber; exhausting the reaction chamber to establish in the chamber a pressure range of 0.1 to 300 Torr; and holding the substrate approximately at said predetermined, cyclotron resonance position in the reaction chamber; and depositing said diamond-like carbon material on a surface of the substrate.
Claim 2
Dependent Claim 137 words
A cyclotron resonance chemical vapor deposition method of forming a diamond or diamond-like carbon material on a substrate comprising: inputting at least one reactive gas comprising carbon into a reaction chamber; emitting a microwave into said reaction chamber at a predetermined frequency and in a predetermined direction; establishing a magnetic field in said reaction chamber where the direction of the magnetic field is substantially parallel to the direction of the microwave and the strength of the magnetic field is such as to cause cyclotron resonance at a predetermined position in the reaction chamber; exhausting the reaction chamber to establish in the chamber a pressure range of 0.1 to 300 Torr; and holding the substrate approximately at said predetermined, cyclotron resonance position in the reaction chamber; and depositing said diamond-like carbon material on a surface of the substrate.
Claim 3
Dependent Claim 14 words
A method as in claim 1 where said cyclotron resonance is mixed cyclotron resonance.
Claim 4
Dependent Claim 40 words
A method as in claim 1 where said reactive gas includes gas selected from the group consisting of C 2 H 2 , C 2 H 4 , CH 3 OH, C 2 H 5 OH, and CH 4 .
Claim 5
Dependent Claim 21 words
A method as in claim 1 wherein said substrate is disposed where the strength of said magnetic field is 875±185 Gauss.
Claim 6
Dependent Claim 16 words
A method as in claim 1 where the frequency of said microwave energy is 2.45 GHz.
Claim 7
Dependent Claim 16 words
A method as in claim 1 where said reactive gas includes an additive gas comprising nitrogen.
Claim 8
Dependent Claim 23 words
A method as in claim 6 where the amount of said nitrogen in said diamond or diamond-like carbon product is 0.01-1.0 weight percent.
Claim 9
Dependent Claim 157 words
A cyclotron resonance chemical vapor deposition method of forming a diamond or diamond-like carbon material on a substrate comprising the steps of: inputting at least one reactive gas comprising carbon into a reaction chamber; emitting a microwave into said reaction chamber at a predetermined frequency and in a predetermined direction; establishing a standing wave of said microwave in the reaction chamber; holding said substrate substantially at a position where said standing wave attains a maximum value; establishing a magnetic field in said reaction chamber where said direction of the magnetic field is is substantially parallel to the direction of the microwave and the strength of the magnetic field is such as to cause cyclotron resonance at approximately the position where the substrate is held in the reaction chamber; exhausting the reaction chamber to establish in the chamber a pressure range of 0.1 to 300 Torr; and depositing said diamond-like carbon material on a surface of the substrate.
Claim 10
Dependent Claim 157 words
A cyclotron resonance chemical vapor deposition method of forming a diamond or diamond-like carbon material on a substrate comprising the steps of: inputting at least one reactive gas comprising carbon into a reaction chamber; emitting a microwave into said reaction chamber at a predetermined frequency and in a predetermined direction; establishing a standing wave of said microwave in the reaction chamber; holding said substrate substantially at a position where said standing wave attains a maximum value; establishing a magnetic field in said reaction chamber where said direction of the magnetic field is is substantially parallel to the direction of the microwave and the strength of the magnetic field is such as to cause cyclotron resonance at approximately the position where the substrate is held in the reaction chamber; exhausting the reaction chamber to establish in the chamber a pressure range of 0.1 to 300 Torr; and depositing said diamond-like carbon material on a surface of the substrate.
Claim 11
Dependent Claim 14 words
A method as in claim 8 where said cyclotron resonance is mixed cyclotron resonance.

References Cited (Backward Citations)

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JPS60103098A Cited
JPS60137898A Cited
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US4743522A Cited
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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1994-05-13 1994-11-12 1995-05-14 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1998-05-13 1998-11-12 1999-05-14 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2002-05-13 2002-11-12 2003-05-14 $7700.00 Window Closed / Lapsed

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