Abstract The present invention provides a semiconductor device including an improved buried electrode formed by selective CVD. In this semiconductor device, a first insulation layer is formed on a semiconductor substrate. A first conductive layer is formed along an inner surface of a recess of an opening formed on the first insulation layer. A second conductive layer is formed on the first conductive layer in the recess of the opening. The second conductive layer is flush with the first insulation layer. The surfaces of the first and second conductive layers are coated with a third conductive layer. A second insulation layer is formed on the first insulation layer and the third conductive layer. A via hole is formed through the second insulation layer and the third conductive layer and reaches to the second conductive layer. A buried electrode layer is grown in the via hole and formed in contact with the second conductive layer. A fourth insulation layer has a group of conductive layers formed on the second insulation layer and the buried electrode layer and electrically connected to the second conductive layer through the buried electrode layer formed in the via hole.
A method for manufacturing a semiconductor device having a buried electrode formed by selective CVD, said method comprising the steps of: forming a first insulation layer on a semiconductor substrate; forming a first conductive layer along an inner surface of a recess of an opening of said first insulation layer; forming a second conductive layer on said first conductive layer in the recess of the opening, said second conductive layer being flush with said first insulation layer; coating surfaces of said first conductive layer and said second conductive layer with a third conductive layer; forming a second insulation layer on said first insulation layer and said third conductive layer; forming a via hole through said second insulation layer and said third conductive layer, said via hole reaching to said second conductive layer; growing a buried electrode layer in said via hole so as to contact said second conductive layer; and forming a third insulation layer on said second insulation layer and said buried electrode layer, so as to electrically connect said third insulation layer having a group of conductive layers to said second conductive layer through said buried electrode layer.
Claim 2
Independent Claim
190 words
A method for manufacturing a semiconductor device having a buried electrode formed by selective CVD, said method comprising the steps of: forming a first insulation layer on a semiconductor substrate; forming a first conductive layer along an inner surface of a recess of an opening of said first insulation layer; forming a second conductive layer on said first conductive layer in the recess of the opening, said second conductive layer being flush with said first insulation layer; coating surfaces of said first conductive layer and said second conductive layer with a third conductive layer; forming a second insulation layer on said first insulation layer and said third conductive layer; forming a via hole through said second insulation layer and said third conductive layer, said via hole reaching to said second conductive layer; growing a buried electrode layer in said via hole so as to contact said second conductive layer; and forming a third insulation layer on said second insulation layer and said buried electrode layer, so as to electrically connect said third insulation layer having a group of conductive layers to said second conductive layer through said buried electrode layer.
Claim 3
Dependent Claim
35 words
The method as defined in claim 1, wherein an induction time of said second conductive layer required for growth of said buried electrode layer is shorter than an induction time of said first conductive layer.
Claim 4
Dependent Claim
33 words
The method as defined in claim 1, wherein said second conductive layer is formed by a material of copper, silver, aluminum, or an alloy containing at least one of copper, silver, and aluminum.
Claim 5
Dependent Claim
37 words
The method as defined in claim 1, wherein said first conductive layer is formed by a material of titanium nitride, niobium, refractory metal, or an alloy containing at least one of titanium nitride, niobium, and refractory metal.