Patent US1362026A successfully refreshed from Google Patents.
Patent US5759746A successfully refreshed from Google Patents.
US5759746A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Fabrication process using a thin resist
Assignee: Toshiba Corp
•
Filing: 1996-05-24
•
Granted: 1998-06-02
•
Expires: 2016-05-24
Abstract
Abstract A fabrication process includes a step of providing a substrate to be fabricated. A multi-layer antireflective layer is then formed on the substrate. A patterned resist having a thickness less than 850 nanometers is formed on the multi-layer antireflective layer and the substrate is fabricated using the patterned resist as a mask.
Inventors
- 👤 Tsukasa Azuma
- 👤 Tokuhisa Ohiwa
- 👤 Tetsuo Matsuda
- 👤 David M. Dobuzinsky
- 👤 Katsuya Okumura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 21:24
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/091; H; H10; H10P; H10P76/00; H10P76/20; H10P76/204; H10P76/2041; H10P76/2043; Y; Y10; Y10S; Y10S430/00; Y10S430/151; Y10S438/00; Y10S438/942; Y10S438/945; Y10S438/948; Y10S438/95
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
48 words
A fabrication process, comprising the steps of: providing a substrate to be fabricated; forming a multi-layer antireflective layer on said substrate; forming a patterned resist having a thickness less than 850 nanometers on said multi-layer antireflective layer; and fabricating said substrate using said patterned resist as a mask.
Claim 2
Dependent Claim
48 words
A fabrication process, comprising the steps of: providing a substrate to be fabricated; forming a multi-layer antireflective layer on said substrate; forming a patterned resist having a thickness less than 850 nanometers on said multi-layer antireflective layer; and fabricating said substrate using said patterned resist as a mask.
Claim 3
Dependent Claim
16 words
The process of claim 1, wherein the step of fabricating said substrate comprises etching said substrate.
Claim 4
Dependent Claim
18 words
The process of claim 1, wherein said multi-layer antireflective layer comprises a carbon layer and an oxide layer.
Claim 5
Dependent Claim
23 words
The process of claim 3, wherein said multi-layer antireflective layer further comprises a transition layer between said carbon layer and said oxide layer.
Claim 6
Dependent Claim
16 words
The process of claim 3, wherein said carbon layer has a thickness of about 100 nanometers.
Claim 7
Dependent Claim
16 words
The process of claim 3, wherein said oxide layer has a thickness of about 50 nanometers.
Claim 8
Dependent Claim
16 words
The process of claim 1, wherein said patterned resist has a thickness of about 610 nanometers.
Claim 9
Dependent Claim
14 words
The process of claim 1, wherein said patterned resist is a chemically amplified resist.
Claim 10
Dependent Claim
12 words
The process of claim 1, wherein said substrate is an insulating material.
Claim 11
Dependent Claim
12 words
The process of claim 1, wherein said substrate is a conducting material.
Claim 12
Dependent Claim
12 words
The process of claim 1, wherein said substrate is a semiconducting material.
Claim 13
Dependent Claim
15 words
The process of claim 1, wherein the fabrication process is a deep ultraviolet fabrication process.
Claim 14
Dependent Claim
22 words
The process of claim 1, wherein the resist has a thickness in a range of about 300 nanometers to about 850 nanometers.
Claim 15
Dependent Claim
52 words
A fabrication process, comprising the steps of: providing a substrate to be fabricated; forming a multi-layer antireflective layer on said substrate; forming a patterned resist having a thickness of between about 300 and about 850 nanometers on said multi-layer antireflective layer; and fabricating said substrate using said patterned resist as a mask.
Claim 16
Dependent Claim
52 words
A fabrication process, comprising the steps of: providing a substrate to be fabricated; forming a multi-layer antireflective layer on said substrate; forming a patterned resist having a thickness of between about 300 and about 850 nanometers on said multi-layer antireflective layer; and fabricating said substrate using said patterned resist as a mask.
Claim 17
Dependent Claim
18 words
The process of claim 14, wherein said multi-layer antireflective layer comprises a carbon layer and an oxide layer.
Claim 18
Dependent Claim
23 words
The process of claim 15, wherein said multi-layer antireflective layer further comprises a transition layer between said carbon layer and said oxide layer.
Claim 19
Dependent Claim
12 words
The process of claim 16, wherein said transition layer comprises silicon nitride.
References Cited (Backward Citations)
US4053350A
Cited
US4426767A
Cited
US4704342A
Cited
US4620898A
Cited
US4975144A
Cited
US5017264A
Cited
US5022959A
Cited
US5102498A
Cited
US5240554A
Cited
US5445710A
Cited
US5185293A
Cited
US5498571A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-06-01 | 2001-12-01 | 2002-06-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-06-01 | 2005-12-01 | 2006-06-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-06-01 | 2009-12-01 | 2010-06-02 | $7700.00 | Window Closed / Lapsed |