US5017264A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of eliminating carbon material by chemical vapor reaction
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1990-09-14
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Granted: 1991-05-21
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Expires: 2010-09-14
Abstract
Abstract An etching method for eliminating carbon material is described. After disposing a substrate to be treated in a CVD reaction chamber, NF 3 is admitted to the chamber and converted into a plasma etchant comprising fluorine ions or radicals by inputting high frequency energy. The carbon material elimination can be applied for chamber cleaning so as to removing carbon deposited debris from the inside of the chamber.
Inventors
- 👤 Shunpei Yamazaki
- 👤 Kenji Itoh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 13:43
CPC Classifications
H; H10; H10W; H10W99/00; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283; H10P50/71; H10P50/73
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
76 words
An etching process of a carbon film formed on a substrate comprising the steps of: disposing said substrate with the carbon film in a reaction chamber; inputting an etchant gas selected from the group comprising of H 2 and O 2 into said reaction chamber; supplying an electrical energy to said etchant gas so that said etchant gas is excited; etching at least a portion of said carbon film by virtue of said excited etchant gas.
Claim 2
Dependent Claim
76 words
An etching process of a carbon film formed on a substrate comprising the steps of: disposing said substrate with the carbon film in a reaction chamber; inputting an etchant gas selected from the group comprising of H 2 and O 2 into said reaction chamber; supplying an electrical energy to said etchant gas so that said etchant gas is excited; etching at least a portion of said carbon film by virtue of said excited etchant gas.
Claim 3
Dependent Claim
29 words
The process of claim 1 wherein a DC bias voltage is further inputted to the substrate so that the etchant gas is accelerated in the vicinity of the substrate.
Claim 4
Dependent Claim
13 words
The process of claim 2 wherein said etching process is an anisotropic etching.
Claim 5
Dependent Claim
32 words
The process of claim 1 wherein a mask having a prescribed patter is provided on said carbon film so that the carbon film can be patterned in accordance with said prescribed pattern.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-05-20 | 1994-11-19 | 1995-05-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-05-20 | 1998-11-19 | 1999-05-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-05-20 | 2002-11-19 | 2003-05-21 | $7700.00 | Window Closed / Lapsed |