US5753565A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of reducing overetch during the formation of a semiconductor device
Assignee: Micron Technology Inc
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Filing: 1996-03-12
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Granted: 1998-05-19
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Expires: 2016-03-12
Abstract
Abstract A method of forming a transistor for a semiconductor device from a semiconductor wafer comprises forming a first nitride layer over the front and back of the wafer, and forming a second nitride layer over the front and back of the wafer and over the first nitride layer. A first resist layer is formed over the front of the wafer and at least a portion of the second nitride layer over the front of the wafer is exposed. The first and second nitride layers are removed from the back of the wafer while, simultaneously, at least a portion of the exposed portion of the second nitride layer over the front of the wafer is removed. Next, a second layer of resist is formed leaving at least a portion of the first nitride layer exposed. Finally, the exposed portion of the first nitride layer is etched.
Inventors
- 👤 David S. Becker
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:35
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/081; H10W20/083; H10W20/089; Y; Y10; Y10S; Y10S438/00; Y10S438/928
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
143 words
A method used during the formation of a semiconductor device from a semiconductor wafer, the wafer having a front, a back, and at least one layer which comprises nitride over the front and a layer over the back, the method comprising the following steps: forming a first mask over the front of the wafer such that a portion of said layer on said front of said wafer is uncovered by said mask; etching said uncovered portion of said layer to form a preetched portion of said layer and simultaneously removing at least a portion of said layer from said back of said wafer; forming a second mask over the front of the wafer such that said preetched portion of said layer is uncovered by said second mask; further etching said preetched portion, wherein said layer forms a portion of a word line stack.
Claim 2
Independent Claim
143 words
A method used during the formation of a semiconductor device from a semiconductor wafer, the wafer having a front, a back, and at least one layer which comprises nitride over the front and a layer over the back, the method comprising the following steps: forming a first mask over the front of the wafer such that a portion of said layer on said front of said wafer is uncovered by said mask; etching said uncovered portion of said layer to form a preetched portion of said layer and simultaneously removing at least a portion of said layer from said back of said wafer; forming a second mask over the front of the wafer such that said preetched portion of said layer is uncovered by said second mask; further etching said preetched portion, wherein said layer forms a portion of a word line stack.
Claim 3
Dependent Claim
13 words
The method of claim 1 wherein said layer over said back comprises nitride.
Claim 4
Dependent Claim
34 words
The method of claim 2 wherein said layer on said back of said wafer is completely removed during said step of simultaneously removing said portion of said layer from said back of said wafer.
Claim 5
Dependent Claim
36 words
The method of claim 1 further comprising the steps of: leaving a portion of said front of said wafer uncovered by said second mask; during said step of further etching, opening a contact to said wafer.
Claim 6
Independent Claim
123 words
A method of forming a semiconductor device comprising the steps of: providing a semiconductor wafer having a transistor gate stack formed thereon which comprises a wafer assembly said wafer further having a layer over a back of said wafer; forming a first mask over said wafer wherein said layer over said back of said wafer is exposed by said first mask; etching said assembly; etching said layer over said back during said step of etching said assembly; forming a second mask over said wafer and etching said assembly and etching at least one other location, said other location having been covered by said first mask, wherein said layer over said back of said wafer is a layer used to form said gate stack.
Claim 7
Independent Claim
123 words
A method of forming a semiconductor device comprising the steps of: providing a semiconductor wafer having a transistor gate stack formed thereon which comprises a wafer assembly said wafer further having a layer over a back of said wafer; forming a first mask over said wafer wherein said layer over said back of said wafer is exposed by said first mask; etching said assembly; etching said layer over said back during said step of etching said assembly; forming a second mask over said wafer and etching said assembly and etching at least one other location, said other location having been covered by said first mask, wherein said layer over said back of said wafer is a layer used to form said gate stack.
Claim 8
Independent Claim
115 words
A method used during the formation of a semiconductor device comprising the following steps: providing a semiconductor wafer assembly comprising at least a silicide layer over a front of a semiconductor wafer and a nitride layer overlying said wafer and said silicide layer at a first location; preetching said nitride layer at said first location; forming a borophosphosilicate glass (BPSG) layer over said silicide and nitride layers at said first location; and etching through said nitride and BPSG layers at said first location to expose said silicide layer, said nitride layer etching at a substantially different rate than said BPSG layer, wherein said silicide, nitride, and BPSG layers form a portion of a gate stack.
Claim 9
Independent Claim
115 words
A method used during the formation of a semiconductor device comprising the following steps: providing a semiconductor wafer assembly comprising at least a silicide layer over a front of a semiconductor wafer and a nitride layer overlying said wafer and said silicide layer at a first location; preetching said nitride layer at said first location; forming a borophosphosilicate glass (BPSG) layer over said silicide and nitride layers at said first location; and etching through said nitride and BPSG layers at said first location to expose said silicide layer, said nitride layer etching at a substantially different rate than said BPSG layer, wherein said silicide, nitride, and BPSG layers form a portion of a gate stack.
Claim 10
Dependent Claim
32 words
The method of claim 6 wherein said nitride layer is formed over a back of said wafer, and said step of preetching removes said nitride layer from said back of said wafer.
Claim 11
Independent Claim
99 words
A method used during the formation of a semiconductor device comprising the following steps: providing a semiconductor wafer having a front and a back; forming a conductive layer over said front of said wafer, and forming a first layer over said conductive layer; preetching said first layer at a first location; forming a second layer over said first layer; and etching said second layer and said first layer to expose said conductive layer at said first location and said wafer at a second location, wherein said conductive layer and said first layer form a portion of a gate stack.
Claim 12
Independent Claim
99 words
A method used during the formation of a semiconductor device comprising the following steps: providing a semiconductor wafer having a front and a back; forming a conductive layer over said front of said wafer, and forming a first layer over said conductive layer; preetching said first layer at a first location; forming a second layer over said first layer; and etching said second layer and said first layer to expose said conductive layer at said first location and said wafer at a second location, wherein said conductive layer and said first layer form a portion of a gate stack.
Claim 13
Dependent Claim
18 words
The method of claim 8 wherein said first layer etches at a slower rate than said second layer.
Claim 14
Dependent Claim
19 words
The method of claim 9 wherein said first layer is formed from a different material than said second layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-05-18 | 2001-11-17 | 2002-05-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-05-18 | 2005-11-17 | 2006-05-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-05-18 | 2009-11-17 | 2010-05-19 | $7700.00 | Window Closed / Lapsed |