Method of etching for integrated circuits with planarized dielectric

Claim 1

A method of fabricating an integrated circuit comprising the steps of: forming a raised topographic feature upon a substrate forming a first dielectric layer covering said raised topographic feature; forming a second dielectric layer covering said first dielectric layer characterized by the further steps of planarizing said second dielectric layer; selectively etching said second dielectric layer to create at least first and second openings, said first opening being above said topographic feature and said second opening being above said substrate, said etching process stopping in said second opening in the vicinity of said first dielectric; and then etching said first dielectric to extend said second opening to said substrate.

Claim 2

A method of fabricating an integrated circuit comprising the steps of: forming a raised topographic feature upon a substrate forming a first dielectric layer covering said raised topographic feature; forming a second dielectric layer covering said first dielectric layer characterized by the further steps of planarizing said second dielectric layer; selectively etching said second dielectric layer to create at least first and second openings, said first opening being above said topographic feature and said second opening being above said substrate, said etching process stopping in said second opening in the vicinity of said first dielectric; and then etching said first dielectric to extend said second opening to said substrate.

Claim 3

A method of fabricating an integrated circuit comprising the steps of: forming a transistor including a gate and source/drain regions; forming at least one gate runner including a silicide overlayer thereon; forming a first dielectric layer covering said source/drain region and said gate runner; forming a second dielectric covering said first dielectric layer; planarizing said second dielectric layer; etching through said second dielectric layer above said gate runner and said source/drain region; said etching process not removing all of said silicide overlayer on said gate runner; etching through said first dielectric layer to completely open windows to said runner and said source/drain region.

Claim 4

A method of fabricating an integrated circuit comprising the steps of: forming a transistor including a gate and source/drain regions; forming at least one gate runner including a silicide overlayer thereon; forming a first dielectric layer covering said source/drain region and said gate runner; forming a second dielectric covering said first dielectric layer; planarizing said second dielectric layer; etching through said second dielectric layer above said gate runner and said source/drain region; said etching process not removing all of said silicide overlayer on said gate runner; etching through said first dielectric layer to completely open windows to said runner and said source/drain region.

Claim 10

A method of integrated circuit fabrication comprising: forming a field oxide upon a substrate, said field oxide defining a moat upon said substrate; forming a gate stack upon said substrate within said moat, said gate stack extending over said field oxide as a gate runner; forming source and drain region within said substrate in said moat; forming a refractory metal silicide upon said source, drain, gate stack and runner; forming a layer of TEOS covering said source, drain, gate stack, and runner, the thickness of said TEOS being 200 nm±10%; forming a layer of BPTEOS, containing 4±1/2% by weight of boron and phosphorous over said TEOS layer, the thickness of said BPTEOS layer being 650 nm; planarizing said BPTEOS layer by resist etchback; depositing and patterning a photoresist material upon the said planarized BPTEOS, said photoresist having an opening above said runner and above one of said source or drain regions; etching said BPTEOS, in a plasma, using said photoresist as a mask using 30±10% sccm of CHF 3 ; 60 sccm±10% of Ar; performing a descum using oxygen in a plasma; etching said TEOS in a plasma, using 30 sccm±10% of CHF 3 ; 60 sccm±10% of Ar; and 8-12 sccm of CF 4 .

Claim 11

A method of integrated circuit fabrication comprising: forming a field oxide upon a substrate, said field oxide defining a moat upon said substrate; forming a gate stack upon said substrate within said moat, said gate stack extending over said field oxide as a gate runner; forming source and drain region within said substrate in said moat; forming a refractory metal silicide upon said source, drain, gate stack and runner; forming a layer of TEOS covering said source, drain, gate stack, and runner, the thickness of said TEOS being 200 nm±10%; forming a layer of BPTEOS, containing 4±1/2% by weight of boron and phosphorous over said TEOS layer, the thickness of said BPTEOS layer being 650 nm; planarizing said BPTEOS layer by resist etchback; depositing and patterning a photoresist material upon the said planarized BPTEOS, said photoresist having an opening above said runner and above one of said source or drain regions; etching said BPTEOS, in a plasma, using said photoresist as a mask using 30±10% sccm of CHF 3 ; 60 sccm±10% of Ar; performing a descum using oxygen in a plasma; etching said TEOS in a plasma, using 30 sccm±10% of CHF 3 ; 60 sccm±10% of Ar; and 8-12 sccm of CF 4 .