Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
144 words
A method of forming a patterned layer of metallization on a substrate having topographical features which comprises: (a) spin-coating on the substrate a layer of a polymeric lift-off material and, thereover, a layer of a polymeric planarizing material, wherein the dry etch rate of the lift-off layer is at least 1.2 times faster than that of the planarizing layer; (b) dry etching said layers selectively to form openings therethrough, the openings having a reverse slope wall profile as a result of the difference in etch rates of said layers; (c) depositing a layer of metallization over the resulting structure, the reverse slope wall profile causing the metallization deposited in said openings to separate from that overlying said planarizing layer; (d) contacting the resulting structure with an organic solvent to separate the lift-off layer from the substrate; and (e) removing said structure from the substrate.
Claim 2
Independent Claim
144 words
A method of forming a patterned layer of metallization on a substrate having topographical features which comprises: (a) spin-coating on the substrate a layer of a polymeric lift-off material and, thereover, a layer of a polymeric planarizing material, wherein the dry etch rate of the lift-off layer is at least 1.2 times faster than that of the planarizing layer; (b) dry etching said layers selectively to form openings therethrough, the openings having a reverse slope wall profile as a result of the difference in etch rates of said layers; (c) depositing a layer of metallization over the resulting structure, the reverse slope wall profile causing the metallization deposited in said openings to separate from that overlying said planarizing layer; (d) contacting the resulting structure with an organic solvent to separate the lift-off layer from the substrate; and (e) removing said structure from the substrate.
Claim 3
Dependent Claim
27 words
A method in accordance with claim 1, wherein the etch rate of said lift-off layer is at least two times faster than that of the planarizing layer.
Claim 4
Dependent Claim
27 words
A method in accordance with claim 1, wherein the lift-off layer is a polymer selected from the group consisting of poly(methylmethacrylate, poly(chloroprene), poly(epichlorohydrin), poly(vinylchloride), and chlorinated polyethylene.
Claim 5
Dependent Claim
13 words
A method in accordance with claim 3, wherein the lift-off layer is poly(methylmethacrylate).
Claim 6
Dependent Claim
24 words
A method in accordance with claim 1, wherein the planarizing layer is a novolac resin-based positive resist material or a rubber-based negative resist material.
Claim 7
Dependent Claim
32 words
A method in accordance with claim 1, wherein the thickness of the lift-off layer is from about 0.3 to about 2 times the height of the highest topographical feature on the substrate.
Claim 8
Dependent Claim
56 words
A method in accordance with claim 1, wherein the thickness of the planarizing layer is between about 0.2 and 5.0 times the thickness of the lift-off layer, with the provision that the thickness of the lift-off layer plus the planarizing layer is at least equal to the height of the highest topographical feature on the substrate.
Claim 9
Dependent Claim
19 words
A method in accordance with claim 7, wherein the lift-off and the planarizing layers are of about equal thickness.
Claim 10
Dependent Claim
45 words
A method in accordance with claim 1, wherein said lift-off and planarizing layers are etched utilizing a hardmask formed by depositing a layer of suitable hardmask material thereover, providing a patterned layer of resist material thereon and etching the exposed portion of the hardmask layer.
Claim 11
Dependent Claim
19 words
A method in accordance with claim 9, wherein said hardmask material is silicon dioxide, silicon nitride or amorphous silicon.
Claim 12
Dependent Claim
20 words
A method in accordance with claim 9, wherein the exposed portion of the hardmask layer is removed by plasma etching.
Claim 13
Dependent Claim
16 words
A method in accordance with claim 1, wherein the metallization is aluminum or an alloy thereof.