Mask diffusion process for forming Zener diode or complementary field effect transistors

Claim 1

The method of forming a complementary metal oxide-silicon device within a substrate of first conductivity type comprising the steps of: forming within said substrate a well region of a second conductivity type which is opposite said first conductivity type; forming a field region in all areas where active devices are not to be formed, thus exposing active regions on the surface of said substrate in which active devices are to be formed; forming a gate dielectric layer within said active regions; forming a gate region on said gate dielectric layer; masking said substrate with a first protective layer; patterning said first protective layer and said gate insulation layer to expose only those active regions on the surface of said well region; doping source and drain regions to said first conductivity type within said well region which are not protected by said gate regions or said field regions; forming a second protective layer on the surface of said substrate not protected by said first protective layer, said field region or said gate region; removing said first protective layer; and doping source and drain regions to a second conductivity type within said substrate which are not protected by said second protective layer, said field region or said gate region.

Claim 2

The method of forming a complementary metal oxide-silicon device within a substrate of first conductivity type comprising the steps of: forming within said substrate a well region of a second conductivity type which is opposite said first conductivity type; forming a field region in all areas where active devices are not to be formed, thus exposing active regions on the surface of said substrate in which active devices are to be formed; forming a gate dielectric layer within said active regions; forming a gate region on said gate dielectric layer; masking said substrate with a first protective layer; patterning said first protective layer and said gate insulation layer to expose only those active regions on the surface of said well region; doping source and drain regions to said first conductivity type within said well region which are not protected by said gate regions or said field regions; forming a second protective layer on the surface of said substrate not protected by said first protective layer, said field region or said gate region; removing said first protective layer; and doping source and drain regions to a second conductivity type within said substrate which are not protected by said second protective layer, said field region or said gate region.

Claim 3

The method of forming a PN junction within a substrate and near the surface of said substrate comprising the steps of: forming a mask on the surface of said substrate to expose a first region of said substrate where it is desired to introduce a dopant of a first conductivity type; introducing dopant of said first conductivity type into said substrate, wherein said dopant of said first conductivity type is formed within said first region; forming a protective layer on the surface of said first region; removing said mask from said substrate; and introducing dopant of a second conductivity type into said substrate, wherein said dopant of said second conductivity type is formed within a second region of said substrate which had not been exposed by said mask, said second region lying adjacent to said first region.

Claim 4

The method of forming a PN junction within a substrate and near the surface of said substrate comprising the steps of: forming a mask on the surface of said substrate to expose a first region of said substrate where it is desired to introduce a dopant of a first conductivity type; introducing dopant of said first conductivity type into said substrate, wherein said dopant of said first conductivity type is formed within said first region; forming a protective layer on the surface of said first region; removing said mask from said substrate; and introducing dopant of a second conductivity type into said substrate, wherein said dopant of said second conductivity type is formed within a second region of said substrate which had not been exposed by said mask, said second region lying adjacent to said first region.