US3677838A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing a zener diode
Assignee: US Philips Corp
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Filing: 1969-06-18
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Granted: 1972-07-18
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Expires: 1989-06-18
Abstract
Abstract A METHOD OF MANUFACTURING AN IMPROVED ZENER DIODE IS DESCRIBED. AN EPITAXIAL LAYER IS GROWN ON A SUBSTRATE AND TWO ADJACENT SURFACE PORTIONS OF THE EPITAXIAL LAYER ARE SELECTED WITH THE SURFACE PORTIONS BEING SPACED IN THE VICINITY OF THE ZENER DIODE P-N JUNCTION TO BE FORMED. THEN, DONOR AND ACCEPTIORS ARE DIFFUESED INTO THE SURFACE PORTIONS IN DIRECTIONS PARALLEL TO THE SURFACE AND TOWARD EACH OTHER UNTIL THE DIFFUSED FRONTS MEET TO FORM THE DESIRED P-N JUNCTION WHICH EXTENDS NORMAL TO THE SURFACE.
Inventors
- 👤 Michel De Brebisson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 15:34
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/60; H10D84/611; H10D84/613; H10D84/01; H10D99/00; Y; Y10; Y10S; Y10S438/00; Y10S438/983
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-07-18 | 1976-01-17 | 1976-07-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-07-18 | 1980-01-17 | 1980-07-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-07-18 | 1984-01-17 | 1984-07-18 | $7700.00 | Window Closed / Lapsed |