US4152824A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Manufacture of solar cells
Assignee: Schott Solar CSP Inc
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Filing: 1977-12-30
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Granted: 1979-05-08
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Expires: 1997-12-30
Abstract
Abstract The invention provides a method of producing solar cells having a composite shallow/deep junction device construction. The solar cells have grid-like contacts on their front energy-receiving sides, with each portion of each contact being coincident, i.e., aligned with, the deep junction regions while the shallow junction regions are exposed to incident radiation. The composite junction and contacts are formed by a novel method which employs conventional techniques, notably the use of doped oxide films as diffusion sources.
Inventors
- 👤 Ronald Gonsiorawski
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 12:13
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/14; C; C23; C23C; C23C18/00; C23C18/16; C23C18/18; C23C18/1851; C23C18/1872; C23C18/1875; C23C18/1879; H10F71/00; H10F71/121; H10P; H10P32/00; H10P32/10; H10P32/12; H10P32/14; H10P32/1408; H10P32/141; H10P32/17; H10P32/171; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/547; Y02P; Y02P70/00; Y02P70/50; Y10; Y10S; Y10S148/00; Y10S148/033; Y10S148/153
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
187 words
A method of making a photovoltaic semiconductor solar cell comprising the steps of: (1) providing a semiconductor body of a first conductivity type and having first and second opposite surfaces; (2) forming on said first surface a continuous layer of a material containing a dopant capable upon diffusion into said body of forming a region of a second opposite conductivity type in said body; (3) removing said layer from selected portions of said surface so as to form a grid-like pattern of apertures defined by intervening non-removed sections of said layer; (4) heating said body in an atmosphere containing said dopant at a temperature at which said dopant will diffuse into said body from said layer and said atmosphere so as to form in said body relatively deep diffused regions of opposite conductivity type in line with said apertures and relatively shallow diffused regions of said opposite conductivity type in line with said intervening layer sections, said regions establishing a junction within said body; and (5) forming conductive contacts on said surfaces with the contacts on said first surface conforming to and overlying said deep diffused regions.
Claim 2
Independent Claim
187 words
A method of making a photovoltaic semiconductor solar cell comprising the steps of: (1) providing a semiconductor body of a first conductivity type and having first and second opposite surfaces; (2) forming on said first surface a continuous layer of a material containing a dopant capable upon diffusion into said body of forming a region of a second opposite conductivity type in said body; (3) removing said layer from selected portions of said surface so as to form a grid-like pattern of apertures defined by intervening non-removed sections of said layer; (4) heating said body in an atmosphere containing said dopant at a temperature at which said dopant will diffuse into said body from said layer and said atmosphere so as to form in said body relatively deep diffused regions of opposite conductivity type in line with said apertures and relatively shallow diffused regions of said opposite conductivity type in line with said intervening layer sections, said regions establishing a junction within said body; and (5) forming conductive contacts on said surfaces with the contacts on said first surface conforming to and overlying said deep diffused regions.
Claim 3
Dependent Claim
21 words
Method according to claim 1 wherein said semiconductor body is P-type conductivity silicon and said diffused dopant regions are N-type conductivity.
Claim 4
Dependent Claim
13 words
Method according to claim 2 wherein said dopant is phosphorus, arsenic or antimony.
Claim 5
Dependent Claim
10 words
Method according to claim 3 wherein said dopant is phosphorus.
Claim 6
Dependent Claim
187 words
Method of making a solar cell comprising the steps of: (a) providing a substrate in the form of a semiconductor body of a first type conductivity; (b) depositing on one surface of said body a diffusion source in the form of a film doped with a diffusion impurity of a second conductivity type; (c) removing said film from only selected areas of said surface so as to form a pattern of apertures defined by intervening sections of said film; (d) diffusing said second conductivity type impurity out of said film and through said surface into said body and also diffusing additional second conductivity type impurity into said body via the apertures in said film so as to form a diffused second conductivity type region in said body which is separated from the first conductivity type bulk region of said body by a P/N junction and which has a greater depth measured from said surface along the areas of said apertures than along the areas of said intervening sections; and (e) forming a metal contact on said one surface only in the areas thereof coincident with said apertures.
Claim 7
Dependent Claim
187 words
Method of making a solar cell comprising the steps of: (a) providing a substrate in the form of a semiconductor body of a first type conductivity; (b) depositing on one surface of said body a diffusion source in the form of a film doped with a diffusion impurity of a second conductivity type; (c) removing said film from only selected areas of said surface so as to form a pattern of apertures defined by intervening sections of said film; (d) diffusing said second conductivity type impurity out of said film and through said surface into said body and also diffusing additional second conductivity type impurity into said body via the apertures in said film so as to form a diffused second conductivity type region in said body which is separated from the first conductivity type bulk region of said body by a P/N junction and which has a greater depth measured from said surface along the areas of said apertures than along the areas of said intervening sections; and (e) forming a metal contact on said one surface only in the areas thereof coincident with said apertures.
Claim 8
Dependent Claim
27 words
Method of claim 5 further including the step of removing said intervening sections of said film from said surface after said conductivity type region has been formed.
Claim 9
Dependent Claim
19 words
Method of claim 6 wherein said intervening sections of film are removed after the metal contact has been formed.
Claim 10
Dependent Claim
66 words
Method of claim 5 wherein said body has a second surface forming a boundary of said first conductivity type bulk region, and further including the step of introducing a first conductivity type impurity to said conductivity type bulk region so as to form a region of relatively high first type conductivity adjacent to said second surface, and thereafter forming a metal contact on said second surface.
Claim 11
Dependent Claim
37 words
Method of claim 8 wherein said region of relatively high first type conductivity is formed by diffusing said first conductivity type impurity through said second surface into said body from a second film overlying said second surface.
Claim 12
Dependent Claim
10 words
Method of claim 5 wherein said substrate is semiconductor silicon.
Claim 13
Dependent Claim
10 words
Method of claim 10 wherein said substrate is P-type silicon.
Claim 14
Dependent Claim
14 words
Method of claim 11 wherein said second conductivity type impurity is phosphorus or arsenic.
Claim 15
Dependent Claim
12 words
Method of claim 5 wherein said film is vitreous SiO 2 .
Claim 16
Dependent Claim
16 words
Method of claim 5 wherein said diffusion source is a silicate glass containing phosphorus or arsenic.
Claim 17
Dependent Claim
15 words
Method of claim 5 wherein said apertures are formed by etch removal of said film.
Claim 18
Dependent Claim
18 words
Method of claim 15 wherein said diffusion source is a silicate glass film containing phosphorus, arsenic or antimony.
Claim 19
Dependent Claim
85 words
Method of claim 5 wherein said semiconductor body is silicon and further wherein said diffusion source is a silicate glass film containing phosphorus, arsenic or boron and is formed by contacting said surface under heating with a vaporous mixture of silane, oxygen, and a hydride of phosphorus, arsenic or boron, said heating being to a temperature such that said silane and hydride are oxidized and interact to form a glass film which is deposited on said surface and contains atoms of said phosphorus or arsenic.
Claim 20
Dependent Claim
39 words
Method of claim 17 wherein formation of said second conductivity type region involves heating said glass film to a temperature high enough to cause said atoms of phosphorus or arsenic to diffuse through said glass into said semiconductor body.
Claim 21
Dependent Claim
60 words
Method of claim 18 wherein said body is disposed in an atmosphere containing atoms of phosphorus or arsenic while it is being heated to effect formation of said second conductivity type region, whereby phosphorus or arsenic atoms from said atmosphere will diffuse into said body via said apertures to form the greater depth portions of said second conductivity type region.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-05-07 | 1982-11-06 | 1983-05-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-05-07 | 1986-11-06 | 1987-05-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-05-07 | 1990-11-06 | 1991-05-08 | $7700.00 | Window Closed / Lapsed |