Abstract A P-type diffusion layer is formed on an N-type silicon semiconductor wafer to establish a P-N junction in a solar cell, the diffusion layer being exposed to radiation. A pair of electrodes are formed on the surfaces of the diffusion layer and the semiconductor wafer in a desired configuration in order to provide output of electric energy generated by the solar cell. The diffusion layer is formed in such a manner that the layer has a thickness of around 3 μm at areas where the electrode is formed and has a thickness of around or below 0.5 μm at regions on which the electrode is not formed. With such an arrangement, radiation having a wavelength of about or shorter than 400 mμm can be used for performing optoelectric generation.
A solar cell comprising: a semiconductor wafer of one conductivity type; a diffusion layer of a conductivity type opposite to the conductivity type of the semiconductive wafer disposed on a first suface of said semiconductive wafer, said diffusion layer being formed on said first surface and having an etched surface providing thinner regions and thicker regions of a desired configuration; a first electrode formed on a second surface of said semiconductor wafer opposite to said first surface; and a second electrode formed on said thicker regions of said diffusion layer.
Claim 2
Dependent Claim
90 words
A solar cell comprising: a semiconductor wafer of one conductivity type; a diffusion layer of a conductivity type opposite to the conductivity type of the semiconductive wafer disposed on a first suface of said semiconductive wafer, said diffusion layer being formed on said first surface and having an etched surface providing thinner regions and thicker regions of a desired configuration; a first electrode formed on a second surface of said semiconductor wafer opposite to said first surface; and a second electrode formed on said thicker regions of said diffusion layer.
Claim 3
Dependent Claim
25 words
The solar cell of claim 1, wherein the semiconductor wafer is an N-type silicon semiconductor wafer and the thin layer is a P-type diffusion layer.
Claim 4
Dependent Claim
36 words
The solar cell of claim 1, wherein the thicker regions of the diffusion layer have a thickness of about 3 μm and the other portions of the thin layer have a thickness of about 0.5 μm.
Claim 5
Dependent Claim
12 words
The solar cell of claim 1, wherein the thicker regions are comb-shaped.