Production of semiconductor photoelectric conversion target

Claim 1

A METHOD OF MAKING A SEMICONDUCTOR PHOTELECTRIC CONVERSION TARGET COMPRISING THE STEPS OF: A. PREPARING A SEMICONDUCTOR SUBSTRATE OF A FIRST CONDUCTIVITY TYPE, WHICH HAS ONE MAJOR SURFACE; B. FORMING A FIRST INSULATING LAYER INCLUDING A FIRST IMPURITY OF THE FIRST CONDUCTIVITY TYPE OF PREDETERMINED CONCENTRATION ON THE MAJOR SURFACE OF SAID SUBSTRATE; C. DEPOSITING A SECOND INSULATING LAYER OVER SAID FIRST INSULATING LAYER; D. MAKING APTERTURES IN ARRAY FASHION IN SAID TWO INSULATING LAYERS TO EXPOSE DESIRED SURFACE PORTIONS OF THE SEMICONDUCTOR SUBSTRATE THROUGH SAID APERTURES; E. DIFFUSING A SECOND IMPURITY OF A SECOND CONDUCTIVITY TYPE OPPOSITE TO SAID FIRST CONDUCTIVITY TYPE INTO THE SUBSTRATE FROM SAID EXPOSE SURFACE THEREOF THROUGH THE APERTURES, WHEREBY AN ARRAY OF SECOND CONDUCTIVITY REGIONS IS FORMED BY SAID DIFFUSION OF THE SECOND IMPURITY INTO SAID MAJOR SURFACE THEREOF AND A HIGH IMPURITY CONCENTRATION LAYER OF SAID FIRST CONDUCTIVITY TYPE IS SIMULTANEOSULY FORMED BY DIFFUSION OF SAID FIRST IMPURITY INCLUDED IN SAID INSULATING LAYER INTO THE SURFACE OF THE SUBSTRATE BENEATH SAID INSULATING LAYERS DURING THE DIFFUSION OF THE SECOND IMPURITY; AND F. PROVIDING A SIGNAL ELECTRODE TO SAID SUBSTRATE SO AS TO APPLY A DESIRED POTENTIAL TO SAID SUBSTRATE.

Claim 2

A METHOD OF MAKING A SEMICONDUCTOR PHOTELECTRIC CONVERSION TARGET COMPRISING THE STEPS OF: A. PREPARING A SEMICONDUCTOR SUBSTRATE OF A FIRST CONDUCTIVITY TYPE, WHICH HAS ONE MAJOR SURFACE; B. FORMING A FIRST INSULATING LAYER INCLUDING A FIRST IMPURITY OF THE FIRST CONDUCTIVITY TYPE OF PREDETERMINED CONCENTRATION ON THE MAJOR SURFACE OF SAID SUBSTRATE; C. DEPOSITING A SECOND INSULATING LAYER OVER SAID FIRST INSULATING LAYER; D. MAKING APTERTURES IN ARRAY FASHION IN SAID TWO INSULATING LAYERS TO EXPOSE DESIRED SURFACE PORTIONS OF THE SEMICONDUCTOR SUBSTRATE THROUGH SAID APERTURES; E. DIFFUSING A SECOND IMPURITY OF A SECOND CONDUCTIVITY TYPE OPPOSITE TO SAID FIRST CONDUCTIVITY TYPE INTO THE SUBSTRATE FROM SAID EXPOSE SURFACE THEREOF THROUGH THE APERTURES, WHEREBY AN ARRAY OF SECOND CONDUCTIVITY REGIONS IS FORMED BY SAID DIFFUSION OF THE SECOND IMPURITY INTO SAID MAJOR SURFACE THEREOF AND A HIGH IMPURITY CONCENTRATION LAYER OF SAID FIRST CONDUCTIVITY TYPE IS SIMULTANEOSULY FORMED BY DIFFUSION OF SAID FIRST IMPURITY INCLUDED IN SAID INSULATING LAYER INTO THE SURFACE OF THE SUBSTRATE BENEATH SAID INSULATING LAYERS DURING THE DIFFUSION OF THE SECOND IMPURITY; AND F. PROVIDING A SIGNAL ELECTRODE TO SAID SUBSTRATE SO AS TO APPLY A DESIRED POTENTIAL TO SAID SUBSTRATE.

Claim 9

A method of making a semiconductor photoelectric conversion target comprising the steps of: a. preparing a semiconductor substrate of a first conductivity type, which has a major surface; b. diffusing a first impurity of the first conductivty type into said substrate from said major surface thereof so as to form a high impurity concentration layer therein; c. forming an insulating layer over said major surface of the substrate; d. making an array of apertures in said insulating layer to expose desired surface portions of the substrate through said apertures; e. diffusing a second impurity of a second conductivity type opposite to said first conductivity type into said substrate at the surface portions thereof exposed through said apertures so as to form an array of semiconductor regions of the second conductivity type; and f. forming a signal electrode onto the substrate to apply desired potential to said substrate.

Claim 10

A method of making a semiconductor photoelectric conversion target comprising the steps of: a. preparing a semiconductor substrate of a first conductivity type, which has a major surface; b. diffusing a first impurity of the first conductivty type into said substrate from said major surface thereof so as to form a high impurity concentration layer therein; c. forming an insulating layer over said major surface of the substrate; d. making an array of apertures in said insulating layer to expose desired surface portions of the substrate through said apertures; e. diffusing a second impurity of a second conductivity type opposite to said first conductivity type into said substrate at the surface portions thereof exposed through said apertures so as to form an array of semiconductor regions of the second conductivity type; and f. forming a signal electrode onto the substrate to apply desired potential to said substrate.