US5286674A
Expired / Lapsed
US
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Method for forming a via structure and semiconductor device having the same
Assignee: NXP USA Inc
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Filing: 1992-03-02
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Granted: 1994-02-15
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Expires: 2012-03-02
Abstract
Abstract A semiconductor device (20) makes contact between a first metal line (22) and an overlying second metal line (24) without the need for a conductive landing pad. Sidewall spacers (30) are formed adjacent sides of metal lines (22) such that during formation of a via (34) in an overlying dielectric layer (32), the sidewall spacer prevent trenching of underlying dielectric layer (28) if the via is misaligned. The sidewall spacers are formed of a dielectric material which has an etch rate which is significantly slower than the etch rate of dielectric layer (32). In another embodiment, portions of the sidewall spacers are selectively removed prior to depositing a second metal layer (42). Upon depositing the second metal layer, the side of metal line (22) is locally clad with the second metal to increase contact area and lowering contact resistance.
Inventors
- 👤 Scott S. Roth
- 👤 Howard C. Kirsch
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 22:11
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/071; H10W20/081; Y; Y10; Y10S; Y10S438/00; Y10S438/97
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
188 words
A method of fabricating a semiconductor device comprising the steps of: providing a semiconductor substrate; forming a first interconnect of a first metallic material overlying the substrate, the first interconnect having a top surface and sides; forming a first dielectric material adjacent at least a portion of a side of the first interconnect, the first dielectric material having a first etch rate; forming a second dielectric material overlying the first dielectric material and the first interconnect, the second dielectric material having a second etch rate which is substantially faster than the first etch rate; removing a portion of the second dielectric material to form a via which overlies a portion of the first interconnect and exposes a portion of the first dielectric material, wherein removing the second dielectric material is accomplished selectively to the first dielectric material; selectively removing the exposed portion of the first dielectric material to expose at least a portion of the side of the first interconnect; and depositing a second metallic material which fills the via to form a contact to both the top surface and the exposed side of the first metallic interconnect.
Claim 2
Independent Claim
188 words
A method of fabricating a semiconductor device comprising the steps of: providing a semiconductor substrate; forming a first interconnect of a first metallic material overlying the substrate, the first interconnect having a top surface and sides; forming a first dielectric material adjacent at least a portion of a side of the first interconnect, the first dielectric material having a first etch rate; forming a second dielectric material overlying the first dielectric material and the first interconnect, the second dielectric material having a second etch rate which is substantially faster than the first etch rate; removing a portion of the second dielectric material to form a via which overlies a portion of the first interconnect and exposes a portion of the first dielectric material, wherein removing the second dielectric material is accomplished selectively to the first dielectric material; selectively removing the exposed portion of the first dielectric material to expose at least a portion of the side of the first interconnect; and depositing a second metallic material which fills the via to form a contact to both the top surface and the exposed side of the first metallic interconnect.
Claim 3
Dependent Claim
26 words
The method of claim 1 wherein the step of selectively removing the first dielectric material comprises removing the first dielectric material by isotropic chemical dry etching.
Claim 4
Dependent Claim
24 words
The method of claim 2 wherein the step of depositing a second metallic material comprises depositing a second metallic material by chemical vapor deposition.
Claim 5
Dependent Claim
25 words
The method of claim 1 wherein the step of forming a first dielectric material comprises forming sidewall spacers adjacent the sides of the first interconnect.
Claim 6
Independent Claim
167 words
A method for fabricating a semiconductor device comprising: providing a semiconductor substrate having an overlying dielectric layer; forming a metallic line on the dielectric layer, the metallic line having a top surface and sides; forming a sidewall spacer of a first dielectric material adjacent a side of the metallic line, the first dielectric material having a first etch rate; depositing a second dielectric material over the metallic line and the sidewall spacer, the second dielectric material having a second etch rate which is substantially faster than the first etch rate; etching a via in the second dielectric material which overlies at least a portion of the metallic line and exposes at least a portion of the sidewall spacer, wherein etching of the second dielectric material is accomplished without substantial etching of the sidewall spacer; removing the exposed portion of the sidewall spacer selective to the dielectric layer beneath the metallic line; and filling the via with a metallic material to form a contact to the metallic line.
Claim 7
Independent Claim
167 words
A method for fabricating a semiconductor device comprising: providing a semiconductor substrate having an overlying dielectric layer; forming a metallic line on the dielectric layer, the metallic line having a top surface and sides; forming a sidewall spacer of a first dielectric material adjacent a side of the metallic line, the first dielectric material having a first etch rate; depositing a second dielectric material over the metallic line and the sidewall spacer, the second dielectric material having a second etch rate which is substantially faster than the first etch rate; etching a via in the second dielectric material which overlies at least a portion of the metallic line and exposes at least a portion of the sidewall spacer, wherein etching of the second dielectric material is accomplished without substantial etching of the sidewall spacer; removing the exposed portion of the sidewall spacer selective to the dielectric layer beneath the metallic line; and filling the via with a metallic material to form a contact to the metallic line.
Claim 8
Dependent Claim
34 words
The method of claim 5 wherein the step of forming a metallic line comprises forming a line comprised of a material selected from the group consisting of: aluminum, copper, aluminum alloys, and copper alloys.
Claim 9
Dependent Claim
43 words
The method of claim 5 wherein the step of depositing a second dielectric material comprises depositing a dielectric material selected from the group consisting of: SiO 2 , phosphorus doped silicate glass (PSG), boron and phosphorus doped silicate glass (BPSG), and organic dielectrics.
Claim 10
Dependent Claim
49 words
The method of claim 5 wherein the step of forming a sidewall spacer comprises forming a sidewall spacer from a material selected from the group consisting of: undoped SiO 2 , Si 3 N 4 , Ta 2 O 5 , Al 2 O 3 , and organic dielectrics.
Claim 11
Dependent Claim
36 words
The method of claim 5 wherein the step of depositing a second dielectric material and the step of forming a sidewall spacer are both accomplished by depositing dielectric material at a temperature less than 500° C.
Claim 12
Dependent Claim
35 words
The method of claim 5 wherein the step of depositing a second dielectric material comprises depositing a dielectric material which has an etch rate at least ten times as great as the first etch rate.
Claim 13
Dependent Claim
27 words
The method of claim 5 wherein the step of removing the exposed portion of the sidewall spacer comprises isotropically removing the exposed portion of the sidewall spacer.
Claim 14
Dependent Claim
49 words
The method of claim 4 wherein the step of forming a sidewall spacer comprises forming a sidewall spacer from a material selected from the group consisting of: undoped SiO 2 , Si 3 N 4 , Ta 2 O 5 , Al 2 O 3 , and organic dielectrics.
Claim 15
Dependent Claim
35 words
The method of claim 1 wherein the step of depositing a second metallic material comprises depositing a material comprised of a metal selected from the group consisting of: aluminum, copper, aluminum alloys, and copper alloys.
Claim 16
Dependent Claim
76 words
The method of claim 1 wherein the step of selectively removing the exposed portion of the first dielectric material comprises removing the exposed portion of the first dielectric material to expose two sides of the first interconnect, and wherein the step of depositing a second metallic material comprises depositing a second metallic material which fills the via to form a contact to the top surface and to the two exposed sides of the first metallic interconnect.
Claim 17
Independent Claim
206 words
A method of fabricating a semiconductor device comprising the steps of: providing a semiconductor substrate; forming a first interconnect of a first metallic material overlying the substrate, the first interconnect having a top surface and two parallel sides; forming a hard mask on the top surface of the first interconnect; forming a first dielectric material adjacent each of the two sides of the first interconnect, the first dielectric material having a first etch rate; forming a second dielectric material overlying the first dielectric material, the first interconnect, and the hard mask, the second dielectric material having a second etch rate which is substantially faster than the first etch rate; removing a portion of the second dielectric material to form a via which exposes the hard mask on the first interconnect, wherein removing the second dielectric material is accomplished selectively to the hard mask and the first dielectric material; selectively removing the exposed portion of the hard mask and surrounding portions of the first dielectric material to expose at least a portion of the side of the first interconnect; and depositing a second metallic material which fills the via to form a contact to the top surface and at least one side of the first metallic interconnect.
Claim 18
Independent Claim
206 words
A method of fabricating a semiconductor device comprising the steps of: providing a semiconductor substrate; forming a first interconnect of a first metallic material overlying the substrate, the first interconnect having a top surface and two parallel sides; forming a hard mask on the top surface of the first interconnect; forming a first dielectric material adjacent each of the two sides of the first interconnect, the first dielectric material having a first etch rate; forming a second dielectric material overlying the first dielectric material, the first interconnect, and the hard mask, the second dielectric material having a second etch rate which is substantially faster than the first etch rate; removing a portion of the second dielectric material to form a via which exposes the hard mask on the first interconnect, wherein removing the second dielectric material is accomplished selectively to the hard mask and the first dielectric material; selectively removing the exposed portion of the hard mask and surrounding portions of the first dielectric material to expose at least a portion of the side of the first interconnect; and depositing a second metallic material which fills the via to form a contact to the top surface and at least one side of the first metallic interconnect.
Claim 19
Dependent Claim
29 words
The method of claim 15 wherein the step of selectively removing the exposed portion of the hard mask and surrounding portions of the first dielectric material comprises isotropically removing.
Claim 20
Dependent Claim
33 words
The method of claim 16 wherein the step of selectively removing the exposed portion of the hard mask and surrounding portions of the first dielectric material comprises removing by isotropic chemical dry etch.
Claim 21
Dependent Claim
45 words
The method of claim 16 wherein the step of selectively removing the exposed portion of the hard mask and surrounding portions of the first dielectric material comprises removing portions of the first dielectric material adjacent each of the two sides of the first metallic interconnect.
Claim 22
Dependent Claim
38 words
The method of claim 16 wherein the step of depositing a second metallic material comprises depositing a second metallic material to form a contact to the top surface and to the two sides of the first metallic interconnect.
Claim 23
Dependent Claim
19 words
The method of claim 16 wherein the hard mask and the first dielectric are comprised of a same material.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-02-14 | 1997-08-16 | 1998-02-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-02-14 | 2001-08-16 | 2002-02-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-02-14 | 2005-08-16 | 2006-02-15 | $7700.00 | Window Closed / Lapsed |