Patent US3289925A successfully refreshed from Google Patents.
Patent US5753539A successfully refreshed from Google Patents.
US5753539A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making an integrated circuit with windowed fuse element and contact pad
Assignee: Toshiba Corp
•
Filing: 1996-06-05
•
Granted: 1998-05-19
•
Expires: 2016-06-05
Abstract
Abstract A permanently alterable, i.e., customizable, integrated circuit has a fuse element and contact pad, and windows extending above the same through an insulative layer. The contact pad window extends down to and exposes the contact pad. The fuse element window terminates just short of the fuse element so that the fuse element remains covered by a thin layer of insulative material. The fuse element and the contact pad reside in a common plane of the substrate and thus can be formed together using a single photolithographic transfer step. Windows of different depth are created above the fuse element and contact pad in a single etching step by providing at least one narrow width etching pattern resist aperture above the fuse element. This slows the etch rate at the fused element relative to that at the contact pad, due to a microloading effect.
Inventors
- 👤 Motoya Okazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 20:48
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/49; H10W20/493; H10W72/00; H10W72/90; H10W72/931; H10W72/932; H10W72/941; H10W72/9415; H10W72/951; H10W72/952
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
210 words
A method of making an integrated circuit including a fuse element and a contact pad, said method comprising the steps of: forming a circuit path on a substrate, said circuit path including a fuse element and a contact pad; covering at least part of the circuit path with an insulative layer; forming a patterned resist layer on said insulative layer, said resist layer providing a first aperture above said fuse element and a second aperture above said contact pad, said first aperture having a width dimension which is sufficiently small to decrease an etch rate of the insulative layer at said first aperture, relative to the second aperture; and etching said insulative layer at said first and second apertures, at different rates dictated by the relatively small width of the first aperture, to form first and second windows of different depths above said fuse element and contact pad, respectively, said first window terminating short of said fuse element such that a thin layer of insulative material remains between said fuse element and the first window, said second window extending down to said contact pad to expose the contact pad; wherein said fuse element and contact pad are formed at the same depth below a top surface of the insulative layer.
Claim 2
Independent Claim
210 words
A method of making an integrated circuit including a fuse element and a contact pad, said method comprising the steps of: forming a circuit path on a substrate, said circuit path including a fuse element and a contact pad; covering at least part of the circuit path with an insulative layer; forming a patterned resist layer on said insulative layer, said resist layer providing a first aperture above said fuse element and a second aperture above said contact pad, said first aperture having a width dimension which is sufficiently small to decrease an etch rate of the insulative layer at said first aperture, relative to the second aperture; and etching said insulative layer at said first and second apertures, at different rates dictated by the relatively small width of the first aperture, to form first and second windows of different depths above said fuse element and contact pad, respectively, said first window terminating short of said fuse element such that a thin layer of insulative material remains between said fuse element and the first window, said second window extending down to said contact pad to expose the contact pad; wherein said fuse element and contact pad are formed at the same depth below a top surface of the insulative layer.
Claim 3
Dependent Claim
22 words
A method according to claim 1, wherein said fuse element and contact pad are formed in a common plane of said substrate.
Claim 4
Dependent Claim
20 words
A method according to claim 1, wherein said fuse element and contact pad are formed of the same metal material.
Claim 5
Dependent Claim
21 words
A method according to claim 1, wherein said fuse element and contact pad are formed using a single photolithographic transfer process.
Claim 6
Dependent Claim
53 words
A method according to claim 1, wherein said first and second windows are formed by applying the same chemical etchant to the insulative layer at the first and second apertures in a single application step, and allowing the etchant to act on the insulative layer at each location for the same time period.
Claim 7
Dependent Claim
15 words
A method according to claim 5, wherein said chemical etchant is a reactive ion etchant.
Claim 8
Dependent Claim
47 words
A method according to claim 1, wherein said patterned resist layer is formed with an array of apertures extending along the fuse element, and during the etching step a plurality of said first windows are formed as a corresponding array of windows terminating above the fuse element.
Claim 9
Dependent Claim
43 words
A method according to claim 7, wherein said circuit pattern is formed with a plurality of adjacent parallel fuse elements, and said array of apertures and the corresponding windows comprises a plurality of narrow slits extending transversely across the plurality of fuse elements.
Claim 10
Dependent Claim
20 words
A method according to claim 1, wherein the first window is formed with a width of 1 μm or less.
Claim 11
Dependent Claim
29 words
A method according to claim 9, wherein said first window has a width of approximately 0.5 μm and said second window has a width of at least 20 μm.
Claim 12
Dependent Claim
21 words
A method according to claim 1, wherein said insulating layer is one of SiO 2 and Si 3 N 4 .
Claim 13
Independent Claim
203 words
A method of making an integrated circuit including a fuse element and a contact pad, said method comprising the steps of: forming a circuit path on a substrate, said circuit path including a fuse element and a contact pad; covering at least part of the circuit path with an insulative layer; forming a patterned resist layer on said insulative layer, said resist layer providing a first aperture above said fuse element and a second aperture above said contact pad, said first aperture having a width dimension which is sufficiently small to decrease an etch rate of the insulative layer at said first aperture, relative to the second aperture; and etching said insulative layer at said first and second apertures, at different rates dictated by the relatively small width of the first aperture, to form first and second windows of different depths above said fuse element and contact pad, respectively, said first window terminating short of said fuse element such that a thin layer of insulative material remains between said fuse element and the first window, said second window extending down to said contact pad to expose the contact pad; wherein the first window is formed with a width of 1 μm or less.
Claim 14
Independent Claim
203 words
A method of making an integrated circuit including a fuse element and a contact pad, said method comprising the steps of: forming a circuit path on a substrate, said circuit path including a fuse element and a contact pad; covering at least part of the circuit path with an insulative layer; forming a patterned resist layer on said insulative layer, said resist layer providing a first aperture above said fuse element and a second aperture above said contact pad, said first aperture having a width dimension which is sufficiently small to decrease an etch rate of the insulative layer at said first aperture, relative to the second aperture; and etching said insulative layer at said first and second apertures, at different rates dictated by the relatively small width of the first aperture, to form first and second windows of different depths above said fuse element and contact pad, respectively, said first window terminating short of said fuse element such that a thin layer of insulative material remains between said fuse element and the first window, said second window extending down to said contact pad to expose the contact pad; wherein the first window is formed with a width of 1 μm or less.
Claim 15
Dependent Claim
27 words
A method according to claim 12, wherein said fuse element and contact pad are formed at the same depth below a top surface of the insulative layer.
Claim 16
Dependent Claim
22 words
A method according to claim 13, wherein said fuse element and contact pad are formed in a common plane of said substrate.
Claim 17
Dependent Claim
20 words
A method according to claim 12, wherein said fuse element and contact pad are formed of the same metal material.
Claim 18
Dependent Claim
21 words
A method according to claim 12, wherein said fuse element and contact pad are formed using a single photolithographic transfer process.
Claim 19
Dependent Claim
53 words
A method according to claim 12, wherein said first and second windows are formed by applying the same chemical etchant to the insulative layer at the first and second apertures in a single application step, and allowing the etchant to act on the insulative layer at each location for the same time period.
Claim 20
Dependent Claim
15 words
A method according to claim 17, wherein said chemical etchant is a reactive ion etchant.
Claim 21
Dependent Claim
47 words
A method according to claim 12, wherein said patterned resist layer is formed with an array of apertures extending along the fuse element, and during the etching step a plurality of said first windows are formed as a corresponding array of windows terminating above the fuse element.
Claim 22
Dependent Claim
43 words
A method according to claim 19, wherein said circuit pattern is formed with a plurality of adjacent parallel fuse elements, and said array of apertures and the corresponding windows comprises a plurality of narrow slits extending transversely across the plurality of fuse elements.
Claim 23
Dependent Claim
29 words
A method according to claim 12, wherein said first window has a width of approximately 0.5 μm and said second window has a width of at least 20 μm.
Claim 24
Dependent Claim
21 words
A method according to claim 12, wherein said insulating layer is one of SiO 2 and Si 3 N 4 .
References Cited (Backward Citations)
US3844858A
Cited
US3878552A
Cited
US3969749A
Cited
US4219835A
Cited
US4269636A
Cited
US4255207A
Cited
US4536949A
Cited
US4628590A
Cited
US4717681A
Cited
JPH01319956A
Cited
US5201987A
Cited
US5360988A
Cited
US5444012A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-05-18 | 2001-11-17 | 2002-05-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-05-18 | 2005-11-17 | 2006-05-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-05-18 | 2009-11-17 | 2010-05-19 | $7700.00 | Window Closed / Lapsed |