US4255207A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Fabrication of isolated regions for use in self-aligning device process utilizing selective oxidation
Assignee: Harris Corp
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Filing: 1979-04-09
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Granted: 1981-03-10
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Expires: 1999-04-09
Abstract
Abstract V-shaped lateral dielectric isolation grooves divide a semiconductor layer into a plurality of regions. The oxide layer above the polycrystalline material in the grooves is thicker than the field oxide layer on the semiconductor layer to prevent the creation of retrograde surface profiles and mask the polycrystalline material during self-aligned device fabrication in the semiconductor layer. The field oxide is formed on the semiconductor layer before the isolation groove fabrication and prevented from increasing in thickness by an oxide inhibiting layer during the isolation groove fabrication.
Inventors
- 👤 Hugh C. Nicolay
- 👤 William G. Lucas
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 05:08
CPC Classifications
H; H10; H10P; H10P76/00; H10P76/40; H10P95/00; H10W; H10W10/00; H10W10/01; H10W10/041; H10W10/40; Y; Y10; Y10S; Y10S148/00; Y10S148/168
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
151 words
A process for laterally isolating portions of a first semiconductor layer of a first conductivity type formed on a second semiconductor layer of a second conductivity type comprising: forming a first oxide layer on said first semiconductor layer of a first thickness; forming an oxide inhibiting mask layer on said first oxide layer; removing portions of said mask layer and said first oxide layer to expose surface areas of said first semiconductor layer; preferentially etching the exposed area of said first and second semiconductor layers to form grooves extending through said first semiconductor layer into said second semiconductor layer; forming a second oxide layer on exposed surfaces of said grooves of a second thickness; depositing polycrystalline material on said second oxide layer in said grooves to substantially fill said grooves; and selectively oxidizing said polycrystalline material to form a third oxide layer of a third thickness greater than said first thickness.
Claim 2
Dependent Claim
151 words
A process for laterally isolating portions of a first semiconductor layer of a first conductivity type formed on a second semiconductor layer of a second conductivity type comprising: forming a first oxide layer on said first semiconductor layer of a first thickness; forming an oxide inhibiting mask layer on said first oxide layer; removing portions of said mask layer and said first oxide layer to expose surface areas of said first semiconductor layer; preferentially etching the exposed area of said first and second semiconductor layers to form grooves extending through said first semiconductor layer into said second semiconductor layer; forming a second oxide layer on exposed surfaces of said grooves of a second thickness; depositing polycrystalline material on said second oxide layer in said grooves to substantially fill said grooves; and selectively oxidizing said polycrystalline material to form a third oxide layer of a third thickness greater than said first thickness.
Claim 3
Dependent Claim
68 words
The process according to claim 1 wherein said depositing is performed to overfill said grooves at least to the height of said mask layer, including removing a portion of said polycrystalline material to recess the top surface of said polycrystalline material below the top surface of said first oxide layer, and wherein said selective oxidation is performed sufficient to form a co-planar surface with said first oxide layer.
Claim 4
Dependent Claim
22 words
The process according to claim 1 wherein said third oxide layer is at least 0.1 microns thicker than said first oxide layer.
Claim 5
Dependent Claim
29 words
The process according to claim 1 wherein said first and second semiconductor layers are single crystal silicon, said polycrystalline material is polysilicon, and said oxide layers are silicon dioxide.
Claim 6
Dependent Claim
36 words
The process according to claim 1 wherein said removing step is performed to form additional apertures of cross-sectional area insufficient to produce a groove when preferentially etched to exceed the thickness of said first semiconductor layer.
Claim 7
Dependent Claim
53 words
The process according to claim 1 including a third semiconductor layer of said first conductivity type below said second semiconductor; and wherein said removing step is performed to form additional apertures of cross-sectional area sufficient to produce a groove when preferentially etched to exceed the thickness of said first and second semiconductor layers.
Claim 8
Dependent Claim
123 words
A process for laterall isolating portions of a first semiconductor layer of a first conductivity type formed on a second semiconductor layer of a second conductivity type comprising: forming a first oxide layer on said first semiconductor layer; forming an oxide inhibiting layer on said first oxide layer; removing portions of said oxide layer, said oxide inhibiting layer, said first semiconductor layer and said second semiconductor layer to form grooves extending through said first semiconductor layer into said second semiconductor layer; forming a second oxide layer on the exposed surfaces of said grooves; substantially filling the grooves with polycrystalline material; and oxidizing the polycrystalline material to form a third oxide layer having a thickness greater than the thickness of the first oxide layer.
Claim 9
Dependent Claim
123 words
A process for laterall isolating portions of a first semiconductor layer of a first conductivity type formed on a second semiconductor layer of a second conductivity type comprising: forming a first oxide layer on said first semiconductor layer; forming an oxide inhibiting layer on said first oxide layer; removing portions of said oxide layer, said oxide inhibiting layer, said first semiconductor layer and said second semiconductor layer to form grooves extending through said first semiconductor layer into said second semiconductor layer; forming a second oxide layer on the exposed surfaces of said grooves; substantially filling the grooves with polycrystalline material; and oxidizing the polycrystalline material to form a third oxide layer having a thickness greater than the thickness of the first oxide layer.
Claim 10
Dependent Claim
47 words
The process according to claim 7 including removing portions of said polycrystalline material to recess the top surface of said polycrystalline material below the top surface of said first oxide layer; and said oxidizing is performed sufficient to form a co-planar surface with said first oxide layer.
Claim 11
Dependent Claim
54 words
The process according to claim 7 including removing an equal thickness of said first and third oxide layers to expose a portion of the surface of said first oxide layer adjacent said groove without exposing said polycrystalline material in said groove and forming a doped region in said exposed portion of first semiconductor layer.
References Cited (Backward Citations)
US3500139A
Cited
US3844858A
Cited
US3979237A
Cited
US3966501A
Cited
US3883948A
Cited
US3913124A
Cited
US3911562A
Cited
US4038110A
Cited
US3998673A
Cited
JPS5235987A
Cited
US4048649A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-03-09 | 1984-09-08 | 1985-03-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-03-09 | 1988-09-08 | 1989-03-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-03-09 | 1992-09-08 | 1993-03-10 | $7700.00 | Window Closed / Lapsed |